ZXT12P20DX
SuperSOT4™
DUAL 20V PNP SILICON LOW SATURATION SWITCHING TRANSISTOR
SUMMARY
V
CEO
=-20V; R
SAT
= 64m ; I
C
= -2.5A
DESCRIPTION
This new 4th generation ultra low saturation transistor utilises the Zetex
matrix structure combined with advanced assembly techniques to give
extremely low on state losses. This makes it ideal for high efficiency, low
voltage switching applications.
MSOP8
FEATURES
•
•
•
•
•
•
•
•
•
Extremely Low Equivalent On Resistance
Extremely Low Saturation Voltage
h
FE
characterised up to 5A
I
C
=2.5A Continuous Collector Current
MSOP8 package
C1
C2
B1
B2
APPLICATIONS
DC - DC Converters
Power Management Functions
Power switches
Motor control
7
B1
E1
E2
ORDERING INFORMATION
DEVICE
ZXT12P20DXTA
ZXT12P20DXTC
DEVICE MARKING
T12P20DX
REEL SIZE
(inches)
7
13
TAPE WIDTH
(mm)
12mm embossed
12mm embossed
1
E1
C1
C1
C2
C2
QUANTITY
PER REEL
1000 units
E2
B2
3
2
Top View
4000 units
ISSUE 1 - MARCH 2000
1
4
5
6
8
ZXT12P20DX
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Peak Pulse Current
Continuous Collector Current
Base Current
Power Dissipation at TA=25°C (a)(d)
Linear Derating Factor
Power Dissipation at TA=25°C (a)(e)
Linear Derating Factor
Power Dissipation at TA=25°C (b)(d)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
CM
I
C
I
B
P
D
LIMIT
-25
-20
-7.5
-10
-2.5
-500
0.87
6.9
1.04
8.3
1.25
10
-55 to +150
UNIT
V
V
V
A
A
mA
W
mW/°C
W
mW/°C
W
mW/°C
°C
P
D
P
D
T
j
:T
stg
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)(d)
Junction to Ambient (b)(d)
Junction to Ambient (a)(e)
SYMBOL
R
θJA
R
θJA
R
θJA
VALUE
143
100
120
UNIT
°C/W
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,
in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal
Impedance graph.
(d) For device with one active die.
(e) For device with two active die running at equal power.
ISSUE 1 - MARCH 2000
2
ZXT12P20DX
CHARACTERISTICS
ISSUE 1 - MARCH 2000
3
ZXT12P20DX
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base Breakdown
Voltage
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector Emitter Cut-Off Current
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation Voltage
Base-Emitter Turn-On Voltage
Static Forward Current Transfer
Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
-12
-95
-160
-0.95
-0.8
300
300
200
50
450
450
350
80
110
45
90
325
MIN.
-25
-20
-7.5
TYP.
-65
-55
-8.5
-100
-100
-100
-16
-125
-200
-1.0
-0.85
900
MAX.
UNIT
V
V
V
nA
nA
nA
mV
mV
mV
V
V
CONDITIONS.
I
C
=-100 A
I
C
=-10mA*
I
E
=-100 A
V
CB
=-20V
V
EB
=-6V
V
CES
=-20V
I
C
=-0.1A, I
B
=-10mA*
I
C
=-1A, I
B
=20mA*
I
C
=-2.5A, I
B
=-125mA*
I
C
=-2.5A, I
B
=-125mA*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-10mA, V
CE
=-2V*
I
C
=-1A, V
CE
=-2V*
I
C
=-2.5A, V
CE
=-2V*
I
C
=-5A, V
CE
=-2V*
MHz
pF
ns
ns
I
C
=-50mA, V
CE
=-10V
f=-50MHz
V
CB
=-10V, f=1MHz
V
CC
=-10V, I
C
=-2A
I
B1
=I
B2
=-40mA
V
BE(sat)
V
BE(on)
h
FE
Transition Frequency
Output Capacitance
Turn-On Time
Turn-Off Time
f
T
C
obo
t
(on)
t
(off)
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
ISSUE 1 - MARCH 2000
4
ZXT12P20DX
TYPICAL CHARACTERISTICS
ISSUE 1 - MARCH 2000
5
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