SMART
• May 12, 1998
Datasheet released.
• December 29, 1998
Modified pin name on page 2.
®
SM5360440UUQUUU
December 29, 1998
Modular Technologies
Revision History
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
1
SMART
Features
•
•
•
•
•
•
•
•
•
•
•
•
®
SM5360440UUQUUU
December 29, 1998
Modular Technologies
16MByte (4M x 36) DRAM Module - 4Mx4 based
72-pin SIMM
Part Numbers
SM53604400UQUUU
: FPM, 5.0V
Standard
: JEDEC
SM53604408UQUUU
: EDO, 5.0V
Configuration
: Parity
Access Time
: 50/60/70ns
Note: Refer last page for all "U” options.
Operation Mode
: FPM/EDO
Operating Voltage
: 5.0V
Refresh
: 2K/4K
Main Device Physicals : 300mil SOJ/TSOP
QCAS Device Physicals : 300/400mil SOJ/TSOP
Lead Finish
: Gold/Solder
Length x Height
: 4.250" x 1.000"
No. of sides
: Single-sided
Mating Connector (Examples)
Horizontal
: AMP-7-382486-2 (Tin) / 7-382487-2 (Gold)
Vertical
: AMP-822019-4 (Tin) / 822031-4 (Gold)
Angled
: AMP-822110-3 (Tin) / 822097-3 (Gold)
Functional Diagram
CAS3#
CAS2#
CAS1#
CAS0#
4Mx8
Block
4Mx8
Block
4Mx4
DRAM
DQ8, DQ17
DQ26, DQ35
4Mx8
Block
4Mx8
Block
RAS0#
RAS2#
DQ0~DQ7
DQ9~DQ16
DQ18, DQ25
DQ27~DQ34
DQ0~DQ35
Notes : 1.
2.
3.
4.
A0~A10/A11 to all DRAMs (A11 is NC for 2K refresh module).
WE# to all DRAMs.
OE# of all DRAMs is grounded.
Each 4Mx8 Block comprises of two 4Mx4 DRAMs.
( All specifications of this device are subject to change without notice.)
V
CC
V
SS
Decoupling capacitors
to all devices.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
2
SMART
Pin Name
A0~A10
A0~A11
A0~A9
DQ0~DQ35
RAS0#, RAS2#
CAS0#~CAS3#
WE#
PD1~PD4
V
CC
V
SS
NC
®
SM5360440UUQUUU
December 29, 1998
Modular Technologies
Pin
No.
Row and Column Addresses
for 2K Refresh Module
Row Addresses for 4K
Refresh Module
Column Addresses for 4K
Refresh Module
Data Inputs/Outputs
Row Address Strobes
Column Address Strobes
Write Enable
Presence Detects
Power Supply
Ground
No Connection
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
Pin
Designation
V
SS
DQ0
DQ18
DQ1
DQ19
DQ2
DQ20
DQ3
DQ21
V
CC
NC
A0
A1
A2
A3
A4
A5
A6
A10
DQ4
DQ22
DQ5
DQ23
DQ6
DQ24
DQ7
DQ25
A7
A11 (Note)
V
CC
A8
A9
NC
RAS2#
DQ26
DQ8
Pin
No.
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
Pin
Designation
DQ17
DQ35
V
SS
CAS0#
CAS2#
CAS3#
CAS1#
RAS0#
NC
NC
WE#
NC
DQ9
DQ27
DQ10
DQ28
DQ11
DQ29
DQ12
DQ30
DQ13
DQ31
V
CC
DQ32
DQ14
DQ33
DQ15
DQ34
DQ16
NC
PD1
PD2
PD3
PD4
NC
V
SS
Presence Detect Pins
Access Time
60ns
70ns
V
SS
V
SS
NC
NC
NC
V
SS
NC
NC
Pin
PD1
PD2
PD3
PD4
50ns
V
SS
NC
V
SS
V
SS
Note : A11 is NC for 2K refresh module.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
3
SMART
Absolute Maximum Ratings
Parameter
Voltage on any pin relative to V
SS
Power Dissipation
Operating Temperature
Storage Temperature
Short Circuit Output Current
®
SM5360440UUQUUU
December 29, 1998
Modular Technologies
DC Characteristics
Symbol
V
T
P
T
T
opr
T
stg
I
OS
Ratings
- 1.0 to +7.0
9
0 to +70
- 55 to +125
50
Unit
V
W
°
C
°
C
mA
Recommended DC Operating Conditions
(T
A
= 0 to +70
°
C)
Parameter
Supply Voltage
Ground
Input High Voltage
Input Low Voltage
Capacitance
(V
CC
= 5.0V
±
10%, T
A
= +25
°
C)
Parameter
Input Capacitance (Address)
Input Capacitance (RAS0#)
Input Capacitance (RAS2#)
Input Capacitance (CAS0#~CAS3#)
Input Capacitance (WE#)
Input/Output Capacitance (DQ0~DQ35)
Notes : Capacitance is sampled per Mil-Std-883.
Symbol
CI1
C
I2
C
I3
C
I4
C
I5
C
I/O
Max
55
45
38
31
73
17
Unit
pF
pF
pF
pF
pF
pF
Symbol
V
CC
V
SS
V
IH
V
IL
Min
4.5
0
2.4
-1.0
Typ
5.0
0
-
-
Max
5.5
0
V
CC
+1.0
0.8
Unit
V
V
V
V
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
4
SMART
®
SM5360440UUQUUU
December 29, 1998
Modular Technologies
DC Characteristics (cont’d)
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Input Leakage Current
Output Leakage Current
Output High Voltage
Output Low Voltage
Symbol
I
LI
I
LO
V
OH
V
OL
Test Conditions
0V
≤
V
in
≤
V
CC
+0.5V
0V
≤
V
out
≤
V
CC
D
out
= Disable
High I
out
= -5mA
Low I
out
= 4.2mA
50ns
60ns
Min Max Min Max
-90
90 -90
90
-10
10 -10
10
2.4
-
-
0.4
2.4
-
-
0.4
70ns
Min Max
-90 90
-10 10
2.4
-
-
0.4
Unit
µ
A
µ
A
V
V
FPM-based Modules
(V
CC
= 5.0V
±
10%, V
SS
= 0V, T
A
= 0 to +70
°
C)
Parameter
Operating Current
Symbol
I
CC1
Test Conditions
RAS#, CAS# cycling;
t
RC
= min.
TTL Interface
RAS#, CAS#
≥
V
IH
D
out
= High-Z
CMOS Interface
RAS#, CAS#
≥
V
CC
- 0.2V
D
out
= High-Z
CAS#=V
IH
; RAS#, Address
cycling @ t
RC
=min.
RAS#, CAS# cycling @
t
RC
=min.
RAS#=V
IL
, CAS#, Address
cycling @ t
PC
=min.
Refresh
2K
4K
50ns
990
810
18
Max.
60ns
900
720
18
Unit
70ns
810
630
18
mA
mA
mA
Note
1, 2
1, 2
Standby Current
I
CC2
9
2K
4K
2K
4K
2K
4K
990
810
990
810
810
720
9
900
720
900
720
720
630
9
810
630
810
630
630
540
mA
mA
mA
mA
mA
mA
mA
2
2
RAS#-only Refresh
Current
CAS#-before-RAS#
Refresh Current
Fast Page Mode
Current
I
CC3
I
CC4
I
CC5
1, 3
1, 3
Notes:
1. Values depend on output load condition when the device is selected. Maximum values are specified at the output open condition.
2. Address can be changed once or less while RAS# = V
IL
.
3. Address can be changed once or less while CAS# = V
IH
.
C
orporate Headquarters:
4305 Cushing Pkwy., Fremont, CA 94538, USA • Tel:(510) 623-1231 • Fax:(510) 623-1434 • E-mail: info@smartm.com
Europe:
36 Linford Forum, Rockingham Dr., Linford Wood, Milton Keynes, MK14 6LY, UK • Tel: + 44-1908 234030 • Fax: + 44-1908-234191
Asia/Pacific:
8 Paterson Hill, Suite 18-08, Singapore • Tel: + 65-838-0177 • Fax: + 65-838-0178
5
NXP MCU
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
