SMDJ SERIES
Taiwan Semiconductor
CREAT BY ART
3000W, 10V - 100V Surface Mount Transient Voltage Suppressor
FEATURES
- T
J
175°C, AECQ-101 qualified
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
DO-214AB (SMC)
MECHANICAL DATA
Case:
DO-214AB (SMC)
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Weight:
0.21 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25°C, Tp=1ms (Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage at 100 A for
Unidirectional only (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
R
θJL
R
θJA
T
J
T
STG
VALUE
3000
6.5
300
3.5 / 5.0
15
75
- 55 to +175
- 55 to +175
UNIT
Watts
Watts
A
Volts
°C/W
°C
°C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25°C Per Fig. 2
Note 2: VF=3.5V on SMDJ10A - SMDJ90A Devices and VF=5.0V on SMDJ100A
Devices for Bipolar Applications
1. For Bidirectional use CA suffix for types SMDJ10 - type SMDJ100
2. Electrical Characteristics Apply in Both Directions
Document number: DS_D0000099
Version: A15
SMDJ SERIES
Taiwan Semiconductor
CREAT BY ART
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
125
PEAK PULSE POWER (P
PPM
) OR CURRENT(I
PP
)
DERATING IN PERCENTAGE, %
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
25
0
0
25
50
75
100
125
150
175
200
1
0.1
0.001
0.01
0.1
tp, PULSE WIDTH, (ms)
1
10
T
A
, AMBIENT TEMPERATURE (°C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
IFSM, PEAK FORWARD SURGE CURRENT (A)
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF I
PPM
1000
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
8.3ms Single Half Sine Wave
UNIDIRECTIONAL ONLY
tr=10μs
Peak Value
I
PPM
Half Value-I
PPM
/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
100
10
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
UNIDIRECTIONAL
BIDIRECTIONAL
VR=0
1000
100
f=1.0MHz
Vsig=50mVp-p
10
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
VR-RATED
STAND-OFF
VOLTAGE
Document number: DS_D0000099
Version: A15
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