NDF10N60Z
N-Channel Power MOSFET
600 V, 0.75
W
Features
•
•
•
•
•
•
Low ON Resistance
Low Gate Charge
ESD Diode−Protected Gate
100% Avalanche Tested
100% R
g
Tested
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Rating
Drain−to−Source Voltage
Continuous Drain Current, R
qJC
(Note 1)
Continuous Drain Current
T
A
= 100°C, R
qJC
(Note 1)
Pulsed Drain Current,
t
P
= 10
ms
Power Dissipation, R
qJC
Gate−to−Source Voltage
Single Pulse Avalanche Energy
(L = 6.0 mH, I
D
= 10 A)
ESD (HBM) (JESD22−A114)
RMS Isolation Voltage
(t = 0.3 sec., R.H.
≤
30%,
T
A
= 25°C) (Figure 13)
Peak Diode Recovery (Note 2)
MOSFET dV/dt
Continuous Source Current (Body Diode)
Maximum Temperature for
Soldering Leads
Operating Junction and
Storage Temperature Range
Symbol
V
DSS
I
D
I
D
I
DM
P
D
V
GS
E
AS
V
esd
V
ISO
NDF
600
10
6.0
40
39
±30
300
3900
4500
Unit
V
A
A
A
W
V
mJ
V
V
www.onsemi.com
V
DSS
(@ T
Jmax
)
650 V
R
DS(ON)
(MAX) @ 5 A
0.75
W
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C unless otherwise noted)
N−Channel
D (2)
G (1)
S (3)
dV/dt
dV/dt
I
S
T
L
T
J
, T
stg
4.5
60
10
260
−55
to 150
V/ns
V/ns
A
°C
°C
1
3
NDF10N60ZG
NDF10N60ZH
TO−220FP
CASE 221AH
2
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Limited by maximum junction temperature.
2. I
S
≤
10 A, di/dt
≤
200 A/ms, V
DD
= 80% BV
DSS
ORDERING AND MARKING INFORMATION
See detailed ordering, marking and shipping information on
page 6 of this data sheet.
©
Semiconductor Components Industries, LLC, 2015
January, 2015
−
Rev. 13
1
Publication Order Number:
NDF10N60Z/D
NDF10N60Z
THERMAL RESISTANCE
Parameter
Junction−to−Case (Drain)
Junction−to−Ambient Steady State (Note 3)
3. Insertion mounted
Symbol
R
qJC
R
qJA
NDF10N60Z
3.2
50
Unit
°C/W
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Breakdown Voltage Temperature Coeffi-
cient
Drain−to−Source Leakage Current
V
GS
= 0 V, I
D
= 1 mA
Reference to 25°C,
I
D
= 1 mA
V
DS
= 600 V, V
GS
= 0 V
V
GS
=
±20
V
V
GS
= 10 V, I
D
= 5.0 A
V
DS
= V
GS
, I
D
= 100
mA
V
DS
= 15 V, I
D
= 10 A
25°C
150°C
I
GSS
R
DS(on)
V
GS(th)
g
FS
C
iss
C
oss
C
rss
Q
g
V
DD
= 300 V, I
D
= 10 A,
V
GS
= 10 V
Q
gs
Q
gd
V
GP
R
g
t
d(on)
V
DD
= 300 V, I
D
= 10 A,
V
GS
= 10 V, R
G
= 5
Ω
t
r
t
d(off)
t
f
0.5
1097
118
20
23
5.0
12
3.0
0.65
3.9
7.9
1373
150
35
47
9.0
26
6.4
1.5
15
31
40
23
4.5
1645
178
50
68
14
36
V
W
ns
nC
BV
DSS
DBV
DSS
/
DT
J
I
DSS
600
0.6
1
50
±10
0.75
4.5
mA
W
V
S
pF
V
V/°C
mA
Test Conditions
Symbol
Min
Typ
Max
Unit
Gate−to−Source Forward Leakage
ON CHARACTERISTICS
(Note 4)
Static Drain−to−Source
On−Resistance
Gate Threshold Voltage
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance (Note 5)
Output Capacitance (Note 5)
Reverse Transfer Capacitance (Note 5)
Total Gate Charge (Note 5)
Gate−to−Source Charge (Note 5)
Gate−to−Drain (“Miller”) Charge (Note 5)
Plateau Voltage
Gate Resistance
RESISTIVE SWITCHING CHARACTERISTICS
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
SOURCE−DRAIN DIODE CHARACTERISTICS
(T
C
= 25°C unless otherwise noted)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
I
S
= 10 A, V
GS
= 0 V
V
GS
= 0 V, V
DD
= 30 V
I
S
= 10 A, di/dt = 100 A/ms
V
SD
t
rr
Q
rr
395
3.0
1.6
V
ns
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Width
≤
380
ms,
Duty Cycle
≤
2%.
5. Guaranteed by design.
www.onsemi.com
2
NDF10N60Z
TYPICAL CHARACTERISTICS
20
18
I
D
, DRAIN CURRENT (A)
16
14
12
10
8
6
4
2
0
T
J
= 25°C
7.0 V
10 V
20
18
6.4 V
6.2 V
6.0 V
5.8 V
5.6 V
5.4 V
5.0 V
0
4
8
12
16
20
24
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
6.6 V
16
14
12
10
8
6
4
2
0
T
J
=
−55°C
2
3
4
5
6
7
8
T
J
= 150°C
V
DS
= 30 V
T
J
= 25°C
V
GS
= 15 V
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
0.80
T
J
= 25°C
0.75
0.80
Figure 2. Transfer Characteristics
T
J
= 25°C
0.75
V
GS
= 10 V
0.70
I
D
= 5 A
0.70
0.65
0.65
0.60
5
6
7
8
9
10
0.60
2.5
5.0
7.5
10
12.5
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
I
D
, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate Voltage
2.7
R
DS(on)
, DRAIN−TO−SOURCE RES-
ISTANCE (NORMALIZED)
V
GS
= 10 V
2.2
1.7
1.2
0.7
0.2
−50
10
I
DSS
, LEAKAGE (nA)
I
D
= 5 A
10,000
Figure 4. On−Resistance vs. Drain Current
and Gate Voltage
V
GS
= 0 V
T
J
= 150°C
1000
100
T
J
= 100°C
−25
0
25
50
75
100
125
150
0
100
200
300
400
500
600
T
J
, JUNCTION TEMPERATURE (°C)
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
NDF10N60Z
TYPICAL CHARACTERISTICS
20
I
D
= 10 A
T
J
= 25°C
15
V
DS
10
Q
gs
5
QT
Q
gd
200
V
GS
300
400
3000
C, CAPACITANCE (pF)
2500
2000
1500
1000
500
0
0
C
rss
C
oss
25
50
75
100
125
C
iss
V
GS
= 0 V
T
J
= 25°C
f = 1 MHz
V
GS
, GATE−TO−SOURCE VOLTAGE (V)
3500
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
100
150
175
200
0
0
5
10
15
20
25
30
35
40
45
50
0
55
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Q
g
, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
1000
10
I
S
, SOURCE CURRENT (A)
8
6
4
2
0
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
V
GS
= 0 V
T
J
= 25°C
V
DD
= 300 V
I
D
= 10 A
V
GS
= 10 V
t
d(off)
t, TIME (ns)
100
t
r
t
f
t
d(on)
10
1
10
R
G
, GATE RESISTANCE (W)
100
0.4
0.5
0.6
0.7
0.8
0.9
1.0
V
SD
, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
V
GS
≤
30 V
Single Pulse
T
C
= 25°C
dc
Figure 10. Diode Source Current vs.
Forward Voltage
100
ms
10
ms
1 ms
10 ms
I
D
, DRAIN CURRENT (A)
10
1
0.1
0.01
0.1
R
DS(on)
Limit
Thermal Limit
Package Limit
1
10
100
1000
V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area for NDF10N60Z
www.onsemi.com
4
NDF10N60Z
TYPICAL CHARACTERISTICS
10
Duty Cycle = 50%
1 20%
10%
5%
0.1
2%
1%
R(t) (°C/W)
0.01
Single Pulse
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
R
qJC
= 3.2°C/W
Steady State
100
1000
PULSE TIME (sec)
Figure 12. Thermal Impedance for NDF10N60Z
LEADS
HEATSINK
0.110″ MIN
Figure 13. Mounting Position for Isolation Test
Measurement made between leads and heatsink with all leads shorted together.
*For additional mounting information, please download the ON Semiconductor
Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
www.onsemi.com
5
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
