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IS62WV5128EALL-55BI: 产品描述Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, TFBGA-36; 产品类别存储存储; 文件大小688KB，共18页; 制造商Integrated Silicon Solution ( ISSI )

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IS62WV5128EALL-55BI概述

Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, TFBGA-36

IS62WV5128EALL-55BI规格参数

参数名称	属性值
厂商名称	Integrated Silicon Solution ( ISSI )
包装说明	TFBGA,
Reach Compliance Code	unknown
最长访问时间	55 ns
JESD-30 代码	R-PBGA-B36
长度	8 mm
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端子数量	36
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX8
封装主体材料	PLASTIC/EPOXY
封装代码	TFBGA
封装形状	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL
座面最大高度	1.2 mm
最大供电电压 (Vsup)	2.2 V
最小供电电压 (Vsup)	1.65 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	BALL
端子节距	0.75 mm
端子位置	BOTTOM
宽度	6 mm
Base Number Matches	1

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IS62WV5128EALL/EBLL/ECLL

IS65WV5128EBLL/ECLL

512Kx8 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES



High-speed access time: 35ns, 45ns, 55ns



CMOS low power operation

– Operating Current: 22 mA (max) at 85°C

– CMOS Standby Current: 3.7uA (typ) at 25°C



TTL compatible interface levels

Single power supply

–1.65V-2.2V V

(IS62/65WV5128EALL)

– 2.2V-3.6V V

(IS62/65WV5128EBLL)

– 3.3V +/-5% V

(IS62/65WV5128ECLL)



Three state outputs

Industrial and Automotive temperature support

Lead-free available

NOVEMBER 2016

DESCRIPTION

The

ISSI

IS62/65WV5128EALL/BLL/CLL are high-

speed, 4M bit static RAMs organized as 512K words

by 8 bits. It is fabricated using

ISSI's

high-performance

CMOS technology. This highly reliable process

coupled with innovative circuit design techniques,

yields high-performance and low power consumption

devices.

When CS# is HIGH (deselected), the device assumes

a standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip

Enable and Output Enable inputs. The active LOW

Write Enable (WE#) controls both writing and reading

of the memory.

The IS62/65WV5128EALL/EBLL are packaged in the

JEDEC standard 32-pin TSOP (TYPE I/II), sTSOP

(TYPE I), SOP and 36-pin mini BGA.



FUNCTIONAL BLOCK DIAGRAM

512 K x 8

MEMORY

ARRAY

A 0 – A18

DECODER

VDD

GND

I/O 0 – I/O7

I/ O

DATA

CIRCUIT

COLUMN / O

CS #

OE#

WE#

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.-

www.issi.com

Rev. A2

11/01/2016

IS62WV5128EALL-55BI相似产品对比

	IS62WV5128EALL-55BI	IS62WV5128EBLL-45BI	IS62WV5128EBLL-45QLI	IS62WV5128EALL-55T2LI	IS62WV5128EALL-55HLI	IS62WV5128EALL-55BLI
描述	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, TFBGA-36	Standard SRAM, 512KX8, 45ns, CMOS, PBGA36, TFBGA-36	Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, SOP-32	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, TSOP1-32	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, STSOP1-32	Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, TFBGA-36
包装说明	TFBGA,	TFBGA,	SOP,	TSOP2,	TSOP1,	TFBGA,
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown
最长访问时间	55 ns	45 ns	45 ns	55 ns	55 ns	55 ns
JESD-30 代码	R-PBGA-B36	R-PBGA-B36	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PBGA-B36
内存密度	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8
功能数量	1	1	1	1	1	1
端子数量	36	36	32	32	32	36
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TFBGA	TFBGA	SOP	TSOP2	TSOP1	TFBGA
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
最大供电电压 (Vsup)	2.2 V	3.6 V	3.6 V	2.2 V	2.2 V	2.2 V
最小供电电压 (Vsup)	1.65 V	2.2 V	2.2 V	1.65 V	1.65 V	1.65 V
标称供电电压 (Vsup)	1.8 V	3 V	3 V	1.8 V	1.8 V	1.8 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	BALL	BALL	GULL WING	GULL WING	GULL WING	BALL
端子位置	BOTTOM	BOTTOM	DUAL	DUAL	DUAL	BOTTOM
Base Number Matches	1	1	1	1	1	1
厂商名称	Integrated Silicon Solution ( ISSI )	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
长度	8 mm	8 mm	-	20.95 mm	11.8 mm	8 mm
座面最大高度	1.2 mm	1.2 mm	-	1.2 mm	1.2 mm	1.2 mm
端子节距	0.75 mm	0.75 mm	-	1.27 mm	0.5 mm	0.75 mm
宽度	6 mm	6 mm	-	10.16 mm	8 mm	6 mm

IS62WV5128EALL-55BI

IS62WV5128EALL-55BI概述

IS62WV5128EALL-55BI规格参数

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