DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, FBGA-60
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 厂商名称 | SK Hynix(海力士) |
| 包装说明 | TFBGA, |
| Reach Compliance Code | unknown |
| 访问模式 | MULTI BANK PAGE BURST |
| 最长访问时间 | 0.5 ns |
| 其他特性 | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B60 |
| 长度 | 9.5 mm |
| 内存密度 | 1073741824 bit |
| 内存集成电路类型 | DDR DRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端口数量 | 1 |
| 端子数量 | 60 |
| 字数 | 134217728 words |
| 字数代码 | 128000000 |
| 工作模式 | SYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 128MX8 |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | TFBGA |
| 封装形状 | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 |
| 座面最大高度 | 1.2 mm |
| 自我刷新 | YES |
| 最大供电电压 (Vsup) | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | BALL |
| 端子节距 | 0.8 mm |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 |
| 宽度 | 7.5 mm |
| Base Number Matches | 1 |
| H5PS1G83KFR-C4I | H5PS1G83KFR-C4J | H5PS1G83KFR-C4C | H5PS1G83KFR-C4L | H5PS1G83KFR-S6I | H5PS1G83KFR-S6J | H5PS1G83KFR-S6L | |
|---|---|---|---|---|---|---|---|
| 描述 | DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 128MX8, 0.5ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, FBGA-60 | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60, FBGA-60 |
| 是否Rohs认证 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 | 符合 |
| 厂商名称 | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) | SK Hynix(海力士) |
| 包装说明 | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, | TFBGA, |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknow | unknow | unknow |
| 访问模式 | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST | MULTI BANK PAGE BURST |
| 最长访问时间 | 0.5 ns | 0.5 ns | 0.5 ns | 0.5 ns | 0.4 ns | 0.4 ns | 0.4 ns |
| 其他特性 | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH | AUTO/SELF REFRESH |
| JESD-30 代码 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 | R-PBGA-B60 |
| 长度 | 9.5 mm | 9.5 mm | 9.5 mm | 9.5 mm | 9.5 mm | 9.5 mm | 9.5 mm |
| 内存密度 | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bit | 1073741824 bi | 1073741824 bi | 1073741824 bi |
| 内存集成电路类型 | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM | DDR DRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端口数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 60 | 60 | 60 | 60 | 60 | 60 | 60 |
| 字数 | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words | 134217728 words |
| 字数代码 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 | 128000000 |
| 工作模式 | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS | SYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | - | - | -40 °C | -40 °C | - |
| 组织 | 128MX8 | 128MX8 | 128MX8 | 128MX8 | 128MX8 | 128MX8 | 128MX8 |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA | TFBGA |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 峰值回流温度（摄氏度） | 260 | 260 | 260 | 260 | 260 | 260 | 260 |
| 座面最大高度 | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 自我刷新 | YES | YES | YES | YES | YES | YES | YES |
| 最大供电电压 (Vsup) | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V | 1.9 V |
| 最小供电电压 (Vsup) | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V | 1.7 V |
| 标称供电电压 (Vsup) | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | OTHER | OTHER | INDUSTRIAL | INDUSTRIAL | OTHER |
| 端子形式 | BALL | BALL | BALL | BALL | BALL | BALL | BALL |
| 端子节距 | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm | 0.8 mm |
| 端子位置 | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| 处于峰值回流温度下的最长时间 | 20 | 20 | 20 | 20 | 20 | 20 | 20 |
| 宽度 | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm | 7.5 mm |
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