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IS62WV5128DALL-55T2I: 产品描述Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32; 产品类别存储存储; 文件大小447KB，共18页; 制造商Integrated Silicon Solution ( ISSI )

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IS62WV5128DALL-55T2I概述

Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32

IS62WV5128DALL-55T2I规格参数

参数名称	属性值
是否Rohs认证	不符合
厂商名称	Integrated Silicon Solution ( ISSI )
零件包装代码	TSOP2
包装说明	0.400 INCH, TSOP2-32
针数	32
Reach Compliance Code	compliant
ECCN代码	3A991.B.2.A
最长访问时间	55 ns
I/O 类型	COMMON
JESD-30 代码	R-PDSO-G32
长度	20.95 mm
内存密度	4194304 bit
内存集成电路类型	STANDARD SRAM
内存宽度	8
功能数量	1
端子数量	32
字数	524288 words
字数代码	512000
工作模式	ASYNCHRONOUS
最高工作温度	85 °C
最低工作温度	-40 °C
组织	512KX8
输出特性	3-STATE
封装主体材料	PLASTIC/EPOXY
封装代码	TSOP2
封装等效代码	TSOP32,.46
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL
电源	1.8/2 V
认证状态	Not Qualified
座面最大高度	1.2 mm
最大待机电流	0.000007 A
最小待机电流	1.2 V
最大压摆率	0.02 mA
最大供电电压 (Vsup)	2.2 V
最小供电电压 (Vsup)	1.65 V
标称供电电压 (Vsup)	1.8 V
表面贴装	YES
技术	CMOS
温度等级	INDUSTRIAL
端子形式	GULL WING
端子节距	1.27 mm
端子位置	DUAL
宽度	10.16 mm
Base Number Matches	1

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IS62WV5128DALL/DBLL, IS65WV5128DALL/DBLL

512K x 8 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

FEATURES

• High-speed access time: 35, 45, 55 ns

• CMOS low power operation

36 mW (typical) operating

9 µW (typical) CMOS standby

• TTL compatible interface levels

• Single power supply

1.65V – 2.2V V

(IS62WV5128dALL)

2.3V – 3.6V V

(IS62WV5128dBLL)

• Fully static operation: no clock or refresh

required

• Three state outputs

• Industrial and Automotive temperature support

• Lead-free available

FEBRUARY 2012

DESCRIPTION

The

ISSI

IS62WV5128DALL / IS62WV5128DBLL are

high-speed, 4M bit static RAMs organized as 512K words

by 8 bits. It is fabricated using

ISSI

's high-performance

CMOS technology. This highly reliable process coupled

with innovative circuit design techniques, yields high-

performance and low power consumption devices.

When

CS1

is HIGH (deselected) the device assumes

a standby mode at which the power dissipation can be

reduced down with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE) controls both writing and reading of the memory.

The IS62WV5128DALL and IS62WV5128DBLL are

packaged in the JEDEC standard 32-pin TSOP (TYPE

I), 32-pin sTSOP (TYPE I), 32-pin TSOP (Type II), 32-pin

SOP and 36-pin mini BGA.

FUNCTIONAL BLOCK DIAGRAM

A0-A18

DECODER

512K x 8

MEMORY ARRAY

GND

I/O

DATA

CIRCUIT

I/O0-I/O7

COLUMN I/O

CS1

CONTROL

CIRCUIT

notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the lat-

est version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can reason-

ably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such applications

unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc. — www.issi.com —

1-800-379-4774

Rev. A

02/09/2012

IS62WV5128DALL-55T2I相似产品对比

	IS62WV5128DALL-55T2I	IS62WV5128DALL-55TI	IS62WV5128DBLL-45T2I	IS62WV5128DBLL-45HI	IS62WV5128DALL-55HI	IS62WV5128DBLL-45TI
描述	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32	Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, 0.400 INCH, TSOP2-32	Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, 8 X 13.40 MM, MO-183, STSOP1-32	Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 8 X 13.40 MM, MO-183, STSOP1-32	Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, 8 X 20 MM, TSOP1-32
是否Rohs认证	不符合	不符合	不符合	不符合	不符合	不符合
零件包装代码	TSOP2	TSOP1	TSOP2	TSOP1	TSOP1	TSOP1
包装说明	0.400 INCH, TSOP2-32	8 X 20 MM, TSOP1-32	0.400 INCH, TSOP2-32	8 X 13.40 MM, MO-183, STSOP1-32	8 X 13.40 MM, MO-183, STSOP1-32	8 X 20 MM, TSOP1-32
针数	32	32	32	32	32	32
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant	compliant
ECCN代码	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A	3A991.B.2.A
最长访问时间	55 ns	55 ns	45 ns	45 ns	55 ns	45 ns
I/O 类型	COMMON	COMMON	COMMON	COMMON	COMMON	COMMON
JESD-30 代码	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32	R-PDSO-G32
长度	20.95 mm	20 mm	20.95 mm	11.8 mm	11.8 mm	20 mm
内存密度	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit	4194304 bit
内存集成电路类型	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
内存宽度	8	8	8	8	8	8
功能数量	1	1	1	1	1	1
端子数量	32	32	32	32	32	32
字数	524288 words	524288 words	524288 words	524288 words	524288 words	524288 words
字数代码	512000	512000	512000	512000	512000	512000
工作模式	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
最高工作温度	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
最低工作温度	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
组织	512KX8	512KX8	512KX8	512KX8	512KX8	512KX8
输出特性	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
封装主体材料	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
封装代码	TSOP2	TSOP1	TSOP2	TSOP1	TSOP1	TSOP1
封装等效代码	TSOP32,.46	TSSOP32,.8,20	TSOP32,.46	TSSOP32,.56,20	TSSOP32,.56,20	TSSOP32,.8,20
封装形状	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
封装形式	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
并行/串行	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
电源	1.8/2 V	1.8/2 V	2.5/3.3 V	2.5/3.3 V	1.8/2 V	2.5/3.3 V
认证状态	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
座面最大高度	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
最大待机电流	0.000007 A	0.000007 A	0.000007 A	0.000007 A	0.000007 A	0.000007 A
最小待机电流	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V	1.2 V
最大压摆率	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA	0.02 mA
最大供电电压 (Vsup)	2.2 V	2.2 V	3.6 V	3.6 V	2.2 V	3.6 V
最小供电电压 (Vsup)	1.65 V	1.65 V	2.3 V	2.3 V	1.65 V	2.3 V
标称供电电压 (Vsup)	1.8 V	1.8 V	3 V	3 V	1.8 V	3 V
表面贴装	YES	YES	YES	YES	YES	YES
技术	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
温度等级	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
端子形式	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
端子节距	1.27 mm	0.5 mm	1.27 mm	0.5 mm	0.5 mm	0.5 mm
端子位置	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
宽度	10.16 mm	8 mm	10.16 mm	8 mm	8 mm	8 mm
厂商名称	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Base Number Matches	1	1	1	1	1	-

IS62WV5128DALL-55T2I

IS62WV5128DALL-55T2I概述

IS62WV5128DALL-55T2I规格参数

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