General Purpose Transistors
General Purpose Transistors
DESCRIPTION & FEATURES
概述及特點
Excellent h
FE
Linearity h
FE
線性特性極½
FHT846/847/848
SOT-23
PIN ASSIGNMENT
引腳說明
PIN NAME
PIN NUMBER
引腳序號
管腳符號
SOT-23
B
1
E
2
C
3
MAXIMUM RATINGS(T
a
=25℃)
最大額定值
CHARACTERISTIC
特性參數
Collector-Emitter Voltage
集電極-發射極電壓
FUNCTION
功½
BASE
EMITTER
COLLECTOR
Symbol
符號
FHT846
V
CEO
FHT847
FHT848
FHT846
V
CBO
FHT847
FHT848
FHT846
V
EBO
FHT847
FHT848
I
C
Rating
額定值
65
45
30
80
50
30
6
6
5
100
Unit
單½
Vdc
Collector-Base Voltage
集電極-基極電壓
Vdc
Emitter-Base Voltage
發射極-基極電壓
Collector Current—Continuous
集電極電流-連續
THERMAL CHARACTERISTICS
熱特性
CHARACTERISTIC
特性參數
Total Device Dissipation
½耗散功率
FR-5 Board(1)
(T
A
=25℃
環境溫度=25℃)
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Vdc
mAdc
Symbol
符號
P
D
R
JA
P
D
R
JA
T
j
,
T
stg
Max
最大值
225
1.8
556
300
2.4
417
150，
-55~150
Unit
單½
mW
mW/℃
℃/W
mW
mW/℃
℃/W
℃
Total Device Dissipation Alumina Substrate,(2) T
A
=25℃
½耗散功率 氧化鋁襯底
Derate above25℃
超過
25℃遞減
Thermal Resistance Junction to Ambient
熱阻
Junction and Storage Temperature結溫和儲存溫度
DEVICE MARKING
打標
FHT846A=1M (110~220),FHT846B=1N(200~450),
FHT847A=1E (110~220),FHT847B=1F(200~450),FHT847C=1H(420~800),
FHT848A=1J (110~220),FHT848B=1K(200~450),FHT848C=1T(420~800)
ELECTRICAL CHARACTERISTICS
電特性
(T
A
=25℃ unless otherwise noted
如無特殊說明，溫度為
25℃)
Test Condition
Symbol
Min
Characteristic
特性參數
測試條件
符號
最小值
Collector Cutoff Current
I
CBO
V
CB
=30Vdc
—
集電極截止電流
I
C
=10mAdc,
Collector-Emitter
V
(BR)CEO
FHT846
65
1
Type
典型值
—
—
Max
最大值
15
—
Unit
單½
nAdc
Vdc
General Purpose Transistors
General Purpose Transistors
BreakdownVoltage (3)
集電極-發射極擊穿電壓
Collector-Base Breakdown
Voltage
集電極-基極擊穿電壓
Emitter-Base Breakdown Voltage
FHT846/847/848
FHT847
FHT848
FHT846
FHT847
FHT848
FHT846
FHT847
FHT848
FHT846
FHT847
FHT848
I
B
=0
I
C
=10µ Adc,
I
E
=0
I
E
=10µ Adc,
I
C
=0
I
C
=2.0mAdc,
V
CE
=5.0Vdc
Ic=10mAdc,
I
B
=0.5mAdc
Ic=100mAdc,
I
B
=5.0mAdc
Ic=10mAdc,
I
B
=0.5mAdc
Ic=100mAdc,
I
B
=5.0mAdc
Ic=2.0mAdc,
V
CE
=5.0Vdc
Ic=10mAdc,
V
CE
=5.0Vdc
Ic=10mAdc,
V
CE
=5.0Vdc,
f=100MHz
V
CB
=10Vdc,
I
E
=0,f=1.0MHz
R
S
=2.0kΩ,
BW=200Hz，
V
CE
=5.0Vdc,
I
C
=200µAdc,
f=1.0KHz
45
30
80
50
30
6.0
6.0
5.0
110
110
110
—
—
—
—
580
—
100
—
V
(BR)CBO
V
(BR)EBO
h
FE
—
—
—
—
—
—
—
0.7
0.9
660
—
—
—
—
—
450
800
800
0.25
Vdc
Vdc
—
—
—
Vdc
發射極-基極擊穿電壓
DC Current Gain
直流電流增益
Collector-Emitter Saturation
Voltage
集電極-發射極½和壓降
Base-Emitter Saturation
Voltage
基極-發射極½和壓降
Base-Emitter On Voltage
基極-發射極
導通電
壓
Current-Gain-Bandwidth
Product
電流增益-帶寬乘積
Output Capacitance
輸出電容
V
CE(sat)
0.6
—
Vdc
—
700
mV
770
—
4
MHz
pF
V
BE(sat)
V
BE(on)
f
T
C
obo
Noise Figure
雜訊係數
NF
—
—
10.0
dB
1. FR-5=1.0×0.75×0.062in.
2. Alumina=0.4×0.3×0.024in, 99.5%alumina.
3. Pulse Width≤300µS;Duty Cycle≤2.0％.
2
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