DISCRETE SEMICONDUCTORS
DATA SHEET
M3D793
BZB984 series
Voltage regulator double diodes
Product specification
Supersedes data of 2001 Nov 28
2002 Jun 21
Philips Semiconductors
Product specification
Voltage regulator double diodes
FEATURES
•
Total power dissipation: max. 425 mW
•
Approx. 5% V
Z
tolerance
•
Ultra small flat plastic SMD package
•
Working voltage range nom. 2.4 to 15 V (E24 range).
APPLICATIONS
•
General regulation functions
•
ESD and surge protection.
handbook, halfpage
BZB984 series
PINNING
PIN
1
2
3
DESCRIPTION
cathode 1
cathode 2
common anode
3
1
3
2
DESCRIPTION
Low-power voltage regulator diodes in a SOT663 ultra
small plastic SMD package.
Fig.1
1
Top view
2
MHC314
Simplified outline (SOT663) and symbol.
MARKING
TYPE
NUMBER
BZB984-C2V4
BZB984-C2V7
BZB984-C3V0
BZB984-C3V3
BZB984-C3V6
MARKING
CODE
91
92
93
94
95
TYPE
NUMBER
BZB984-C3V9
BZB984-C4V3
BZB984-C4V7
BZB984-C5V1
BZB984-C5V6
MARKING
CODE
96
97
98
99
9A
TYPE
NUMBER
BZB984-C6V2
BZB984-C6V8
BZB984-C7V5
BZB984-C8V2
BZB984-C9V1
MARKING
CODE
9B
9C
9D
9E
9F
TYPE
NUMBER
BZB984-C10
BZB984-C11
BZB984-C12
BZB984-C13
BZB984-C15
MARKING
CODE
9G
9H
9J
9K
9L
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
I
F
I
ZSM
P
tot
P
ZSM
T
stg
T
j
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
continuous forward current
non-repetitive peak reverse
current
total power dissipation
non-repetitive peak reverse
dissipation
storage temperature
junction temperature
t
p
= 100
µs;
square wave; T
amb
= 25
°C;
prior to surge
T
amb
= 25
°C;
2 diodes loaded; note 1
T
amb
= 25
°C;
1 diode loaded; note 1
t
p
= 100
µs;
square wave; T
amb
= 25
°C;
prior to surge
CONDITIONS
−
MIN.
MAX.
200
UNIT
mA
see Table 1
−
−
−
−65
−
425
265
40
+150
150
mW
mW
W
°C
°C
2002 Jun 21
2
Philips Semiconductors
Product specification
Voltage regulator double diodes
ELECTRICAL CHARACTERISTICS
Total BZB984-C series
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
V
F
I
R
PARAMETER
forward voltage
reverse current
BZB984-C2V4
BZB984-C2V7
BZB984-C3V0
BZB984-C3V3
BZB984-C3V6
BZB984-C3V9
BZB984-C4V3
BZB984-C4V7
BZB984-C5V1
BZB984-C5V6
BZB984-C6V2
BZB984-C6V8
BZB984-C7V5
BZB984-C8V2
BZB984-C9V1
BZB984-C10
BZB984-C11
BZB984-C12
BZB984-C13
BZB984-C15
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 1 V
V
R
= 2 V
V
R
= 2 V
V
R
= 2 V
V
R
= 4 V
V
R
= 4 V
V
R
= 5 V
V
R
= 5 V
V
R
= 6 V
V
R
= 7 V
V
R
= 8 V
V
R
= 8 V
V
R
= 8 V
V
R
= 10.5 V
CONDITIONS
I
F
= 10 mA; see Fig.2
BZB984 series
MAX.
0.9
50
20
10
5
5
3
3
3
2
1
3
2
1
700
500
200
100
100
100
50
V
UNIT
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
µA
nA
nA
nA
nA
nA
nA
nA
2002 Jun 21
3
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Table 1
Per type BZB984-C2V4 to
C15
T
j
= 25
°C
unless otherwise specified.
DIFFERENTIAL RESISTANCE
r
dif
(Ω)
at I
Z
= 1 mA
at I
Z
= 5 mA
TYP.
70
75
80
85
85
85
80
50
40
15
6
6
6
6
6
8
10
10
10
10
30
30
25
7.9
8.8
10.7
20
6.9
20
6.0
15
5.2
15
4.3
15
3.6
15
3.0
200
150
150
150
90
90
85
80
75
10
2.2
200
40
1.0
300
60
−0.5
300
80
−1.2
300
90
−1.7
450
6.0
6.0
6.0
6.0
6.0
6.0
4.0
4.0
3.0
3.0
2.5
2.5
2.5
2.0
90
−1.9
450
6.0
90
−1.9
450
6.0
95
−1.8
450
6.0
95
−1.6
450
6.0
100
−1.4
450
6.0
100
−1.3
450
6.0
MAX.
TYP.
MAX.
MAX.
MAX.
600
600
600
600
600
600
600
500
480
400
150
80
80
80
100
150
150
150
170
200
Philips Semiconductors
TEMP. COEFF.
S
Z
(mV/K)
at I
Ztest
= 5 mA
(see Figs 3 and 4)
DIODE CAP.
C
d
(pF)
at f = 1 MHz;
V
R
= 0 V
NON-REPETITIVE PEAK
REVERSE CURRENT
I
ZSM
(A) at t
p
= 100
µs;
T
amb
= 25
°C
2002 Jun 21
WORKING VOLTAGE
V
Z
(V)
at I
Z
= 5 mA
BZB984-
Cxxx
Tol.
≈5%
MIN.
MAX.
TYP.
2V4
2.2
2.6
275
2V7
2.5
2.9
300
3V0
2.8
3.2
325
3V3
3.1
3.5
350
3V6
3.4
3.8
375
3V9
3.7
4.1
400
Voltage regulator double diodes
4V3
4.0
4.6
410
4V7
4.4
5.0
425
5V1
4.8
5.4
400
5V6
5.2
6.0
80
4
6V2
5.8
6.6
40
6V8
6.4
7.2
30
7V5
7.0
7.9
30
8V2
7.7
8.7
40
9V1
8.5
9.6
40
10
9.4
10.6
50
11
10.4
11.6
50
12
11.4
12.7
50
13
12.4
14.1
50
15
13.8
15.6
50
BZB984 series
Product specification
Philips Semiconductors
Product specification
Voltage regulator double diodes
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
R
th j-a
PARAMETER
thermal resistance from junction to soldering point
thermal resistance from junction to ambient
CONDITIONS
2 diodes loaded; note 1
1 diode loaded; note 1
2 diodes loaded; note 2
1 diode loaded; note 2
Notes
1. Solder points on cathode tabs.
2. Device mounted on an FR4 printed-circuit board.
Soldering
The only recommended soldering method is reflow soldering.
GRAPHICAL DATA
BZB984 series
VALUE
125
230
294
472
UNIT
K/W
K/W
K/W
K/W
handbook, halfpage
300
MLD362
MLD363
handbook, halfpage
0.5
IF
(mA)
200
SZ
(mV/K)
0
4V7
4V3
−0.5
2V4
2V7
−1
3V9
100
3V6
−1.5
3V3
3V0
0
0.6
0.7
0.8
0.9
VF (V)
1
−2
10
−1
1
10
IZ (mA)
10
2
T
j
= 25
°C.
BZB984-C2V4 to C4V7.
T
j
= 25 to 150
°C.
Fig.2
Forward current as a function of forward
voltage; typical values.
Fig.3
Temperature coefficient as a function of
working current; typical values.
2002 Jun 21
5
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