< IGBT MODULES >
CM450DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
Collector current I
C
.............….......................…
Maximum junction temperature T
j m a x
..............
●Flat
base Type
●Copper
base plate (non-plating)
●Tin
plating pin terminals
●RoHS
Directive compliance
Dual switch (Half-Bridge)
450
A
1 7 5
°C
Collector-emitter voltage V
CES
......................…
1 7 0 0
V
●Recognized
under UL1557, File E323585
APPLICATION
Wind power, AC Motor Control, Motion/Servo Control, Power supply, etc.
OUTLINE DRAWING & INTERNAL CONNECTION
Dimension in mm
SECTION A
DETAIL B
Tolerance otherwise specified
Division of Dimension
0.5
over
over
3
6
to
to
to
3
6
30
Tolerance
±0.2
±0.3
±0.5
±0.8
±1.2
C1
(2)
C1
(1)
Es1 G1
(18) (17)
TH2
(16)
TH1 Cs1
(15) (14)
Es2 G2 Cs2
(13) (12) (11)
NC
(10)
NC
(9)
Th
NTC
Tr1
Di1
Di2
C2E1
(7)
Tr2
C2E1
(8)
over 30
over 120
to 120
to 400
E2
(3)
TERMINAL
t=0.8
E2
(4)
NC NC
(5) (6)
Publication Date : October 2013
1
< IGBT MODULES >
CM450DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
MAXIMUM RATINGS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
V
CES
V
GES
I
C
I
CRM
P
tot
I
E
I
ERM
(Note1)
(Note1)
Item
Collector-emitter voltage
Gate-emitter voltage
Collector current
Total power dissipation
Emitter current
G-E short-circuited
C-E short-circuited
DC, T
C
=125 °C
Pulse, Repetitive
T
C
=25 °C
DC
(Note2)
(Note3)
(Note2, 4)
(Note2, 4)
(Note3)
Conditions
Rating
1700
± 20
450
900
4410
450
900
Unit
V
V
A
W
A
Pulse, Repetitive
Item
MODULE
Symbol
V
isol
T
jmax
T
Cmax
T
jop
T
stg
Isolation voltage
Maximum junction temperature
Maximum case temperature
Operating junction temperature
Storage temperature
Conditions
Terminals to base plate, RMS, f=60 Hz, AC 1 min
Instantaneous event (overload)
(Note4)
Rating
4000
175
125
-40 ~ +150
-40 ~ +125
Unit
V
°C
°C
Continuous operation (under switching)
-
ELECTRICAL CHARACTERISTICS (T
j
=25 °C, unless otherwise specified)
INVERTER PART IGBT/DIODE
Symbol
I
CES
I
GES
V
GE(th)
V
Cesat
(Terminal)
Item
Collector-emitter cut-off current
Gate-emitter leakage current
Gate-emitter threshold voltage
Conditions
V
CE
=V
CES
, G-E short-circuited
V
GE
=V
GES
, C-E short-circuited
I
C
=45 mA, V
CE
=10 V
I
C
=450 A, V
GE
=15 V,
Refer to the figure of test circuit.
(Note6)
Limits
Min.
-
-
5.4
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
-
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
T
j
=25 °C
T
j
=125 °C
T
j
=150 °C
-
-
-
-
-
-
-
-
-
-
-
-
-
Typ.
-
-
6.0
2.00
2.20
2.25
1.90
2.10
2.15
-
-
-
2480
-
-
-
-
4.1
2.9
2.7
4.0
2.8
2.6
-
17
147
129
73
-
3.2
Max.
1.0
0.5
6.6
2.50
-
-
2.40
-
-
119
9.8
2.2
-
900
150
900
400
5.3
-
-
5.2
-
-
300
-
-
-
-
0.6
-
Unit
mA
μA
V
V
Collector-emitter saturation voltage
V
Cesat
(Chip)
I
C
=450 A,
V
GE
=15 V,
(Note6)
V
C
ies
C
oes
C
res
Q
G
t
d(on)
t
r
t
d(off)
t
f
V
EC
(Note1)
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
CC
=1000 V, I
C
=450 A, V
GE
=15 V
V
CC
=1000 V, I
C
=450 A, V
GE
=±15 V,
R
G
=0
Ω,
Inductive load
I
E
=450 A, G-E short-circuited,
Refer to the figure of test circuit.
(Note6)
V
CE
=10 V, G-E short-circuited
nF
nC
ns
V
(Terminal)
Emitter-collector voltage
V
EC
(Note1)
I
E
=450 A,
G-E short-circuited,
(Note6)
V
ns
μC
mJ
mJ
mΩ
Ω
(Chip)
t
rr
Q
rr
E
on
(Note1)
(Note1)
Reverse recovery time
Reverse recovery charge
Turn-on switching energy per pulse
Turn-off switching energy per pulse
V
CC
=1000 V, I
E
=450 A, V
GE
=±15 V,
R
G
=0
Ω,
Inductive load
V
CC
=1000 V, I
C
=I
E
=450 A,
V
GE
=±15 V, R
G
=0
Ω,
T
j
=150 °C,
Inductive load
Main terminals-chip, per switch,
T
C
=25 °C
Per switch
(Note4)
E
off
E
rr
(Note1)
Reverse recovery energy per pulse
Internal lead resistance
Internal gate resistance
R
CC'+EE'
r
g
Publication Date : October 2013
2
< IGBT MODULES >
CM450DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
ELECTRICAL CHARACTERISTICS (cont.; T
j
=25 °C, unless otherwise specified)
NTC THERMISTOR PART
Symbol
R
25
∆R/R
B
(25/50)
P
25
Item
Zero-power resistance
Deviation of resistance
B-constant
Power dissipation
T
C
=25 °C
(Note4)
(Note4)
(Note6)
Conditions
Limits
Min.
4.85
-7.3
-
-
Typ.
5.00
-
3375
-
Max.
5.15
+7.8
-
10
Unit
kΩ
%
K
mW
R
100
=493
Ω,
T
C
=100 °C
Approximate by equation
T
C
=25 °C
(Note4)
THERMAL RESISTANCE CHARACTERISTICS
Symbol
R
th(j-c)Q
R
th(j-c)D
R
th(c-s)
Item
Thermal resistance
Contact thermal resistance
Conditions
Junction to case, per IGBT
Junction to case, per DIODE
Thermal grease applied
(Note4)
(Note4)
Limits
Min.
-
-
-
Typ.
-
-
7
Max.
34
52
-
Unit
K/kW
K/kW
Case to heat sink, per 1 module,
(Note4, 7)
MECHANICAL CHARACTERISTICS
Symbol
M
t
M
s
d
s
d
a
m
e
c
Mounting torque
Creepage distance
Clearance
mass
Flatness of base plate
Item
Main terminals
Mounting to heat sink
Terminal to terminal
Terminal to base plate
Terminal to terminal
Terminal to base plate
-
On the centerline X, Y
(Note8)
Conditions
M 6 screw
M 5 screw
Limits
Min.
3.5
2.5
22.5
16.8
15.5
11.3
-
±0
Typ.
4.0
3.0
-
-
-
-
690
-
Max.
4.5
3.5
-
-
-
-
-
+100
Unit
N·m
mm
mm
g
μm
Note1. Represent ratings and characteristics of the anti-parallel, emitter-collector free wheeling diode (DIODE).
2. Junction temperature (T
j
) should not increase beyond T
j m a x
rating.
3. Pulse width and repetition rate should be such that the device junction temperature (T
j
) dose not exceed T
j m a x
rating.
4. Case temperature (T
C
) and heat sink temperature (T
s
) are defined on the each surface (mounting side) of base plate and heat sink
just under the chips. Refer to the figure of chip location.
5. Pulse width and repetition rate should be such as to cause negligible temperature rise.
R
1
1
)
,
6.
B
(
25
/
50
)
½
ln(
25
) /(
R
50
T
25
T
50
R
25
: resistance at absolute temperature T
25
[K]; T
25
=25 [°C]+273.15=298.15 [K]
R
50
: resistance at absolute temperature T
50
[K]; T
50
=50 [°C]+273.15=323.15 [K]
7. Typical value is measured by using thermally conductive grease of
λ=0.9
W/(m·K).
8. The base plate (mounting side) flatness measurement points (X, Y) are as follows of the following figure.
-: Concave
+: Convex
X
Y
mounting side
mounting side
Label side
mounting side
-: Concave
+: Convex
9. Use the following screws when mounting the printed circuit board (PCB) on the stand offs.
φ2.6×10
or
φ2.6×12
self tapping screw"
The length of the screw depends on the thickness (t1.6~t2.0) of the PCB.
Publication Date : October 2013
3
< IGBT MODULES >
CM450DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
GEon
R
G
Item
(DC) Supply voltage
Gate (-emitter drive) voltage
External gate resistance
Conditions
Applied across C1-E2
Applied across G1-Es1/G2-Es2
Per switch
Limits
Min.
-
13.5
0
Typ.
1000
15.0
-
Max.
1200
16.5
18
Unit
V
V
Ω
CHIP LOCATION (Top view)
Dimension in mm, tolerance: ±1 mm
Tr1/Tr2: IGBT, Di1/Di2: DIODE, Th: NTC thermistor
Publication Date : October 2013
4
< IGBT MODULES >
CM450DXL-34SA
HIGH POWER SWITCHING USE
INSULATED TYPE
TEST CIRCUIT
1/2
14
C1
C1
1/2
V
GE
=15V
17
Short-
circuite d
I
C
Cs1
Short-
circuite d
Cs1
I
E
G1
Short-
circuite d
14
G1
17
V
Short-
circuite d
18
7/8
11
Es1
V
C2E1
Es1
C2E1
18
V
Cs2
V
Short-
circuite d
11
7/8
V
GE
=15V
12
3/4
G2
E2
I
C
Short-
circuite d
Cs2
I
E
12
G2
E2
13
Es2
Es2
13
3/4
Tr1
V
C E s a t
test circuit
TEST CIRCUIT AND WAVEFORMS
C1
Cs1
Tr2
Di1
V
EC
test circuit
Di2
v
GE
0V
½
½
i
E
90 %
0
t
i
E
G1
Q
r r
=0.5×I
r r
×t
r r
I
E
t
rr
t
I
rr
0.5×I
r r
Load
C2E1
-V
GE
Es 1
Cs2
½
+
V
CC
i
C
90 %
0A
+V
GE
0V
-V
GE
R
G
v
CE
G2
v
GE
Es 2
i
C
10%
0A
t
r
t
d ( o ff )
t
f
t
d ( o n )
t
E2
Switching characteristics test circuit and waveforms
i
E
t
r r
, Q
r r
test waveform
I
EM
v
EC
V
CC
I
CM
v
CE
V
CC
i
C
i
C
V
CC
I
CM
v
CE
0A
t
0.1×I
CM
0
0.1×V
CC
0.1×V
CC
t
0
0.02×I
CM
t
0V
t
t
i
t
i
t
i
IGBT Turn-on switching energy
IGBT Turn-off switching energy
DIODE Reverse recovery energy
Turn-on / Turn-off switching energy and Reverse recovery energy test waveforms (Integral time instruction drawing)
Publication Date : October 2013
5
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