Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3PN package
・Respectively
complement to type
MJE4350/4351/4352/4353
・DC
current gain h
FE
=8(Min)@I
C
=16A
APPLICATIONS
・For
use in high power audio amplifier and
switching regulator circuits
PINNING
PIN
1
2
3
Base
Collector;connected to
mounting base
Emitter
DESCRIPTION
MJE4340/4341/4342/4343
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
固电
HA
INC
Collector-emitter
voltage
Collector current
Collector-base
voltage
导½
半
PARAMETER
CONDITIONS
MJE4340
MJE4341
MJE4342
ES
NG
MJE4343
MJE4340
MJE4341
MJE4342
MJE4343
Open emitter
MIC
E
OR
CT
NDU
O
VALUE
100
120
140
160
100
120
UNIT
V
V
CEO
Open base
140
160
Open collector
7
16
20
5
T
C
=25℃
125
150
-65~150
V
V
EBO
I
C
I
CM
I
B
P
C
T
j
T
stg
Emitter-base voltage
V
A
A
A
W
℃
℃
Collector current-peak
Base current
Collector power dissipation
Junction temperature
Storage temperature
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
MAX
1.0
UNIT
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
MJE4340
MJE4341
I
C
=100mA ;I
B
=0
MJE4342
MJE4343
V
CEsat-1
V
CEsat-2
V
BEsat
V
BE
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter on voltage
MJE4340
I
C
=8A ;I
B
=0.8A
I
C
=16A; I
B
=2.0A
I
C
=16A; I
B
=2.0A
I
C
=16A ; V
CE
=4V
V
CE
=50V; I
B
=0
V
CE
=60V; I
B
=0
V
CE
=70V; I
B
=0
V
CE
=80V; I
B
=0
MJE4340/4341/4342/4343
CONDITIONS
MIN
100
120
TYP.
MAX
UNIT
V
CEO(SUS)
Collector-emitter
sustaining voltage
V
140
160
2.0
3.5
3.9
3.9
V
V
V
V
I
CEO
固电
Collector
cut-off current
导½
半
MJE4341
MJE4342
I
CEX
I
CBO
I
EBO
h
FE-1
h
FE-2
C
OB
f
T
ANG
CH
IN
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Output capacitance
Transition frequency
MJE4343
MIC
E SE
V
CB
=RatedV
CB
; I
E
=0
V
EB
=7V; I
C
=0
I
C
=8A ; V
CE
=2V
I
C
=16A ; V
CE
=4V
OR
CT
NDU
O
0.75
1.0
5.0
0.75
1.0
15
8
800
1.0
mA
V
CE
=RatedV
CBO
; V
BE
=1.5V
T
C
=150℃
mA
mA
mA
I
E
=0 ; V
CB
=10V;f=0.1MHz
I
C
=-1A ; V
CE
=20V;f=0.5MHz
pF
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
MJE4340/4341/4342/4343
固电
导½
半
ANG
CH
IN
MIC
E SE
OR
CT
NDU
O
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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