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VN0610LTA

产品描述Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
产品类别分立半导体    晶体管   
文件大小52KB,共2页
制造商Calogic
官网地址http://www.calogic.net/
下载文档 详细参数 选型对比 全文预览

VN0610LTA概述

Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92

VN0610LTA规格参数

参数名称属性值
厂商名称Calogic
包装说明CYLINDRICAL, O-PBCY-T3
Reach Compliance Codeunknown
ECCN代码EAR99
配置SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压60 V
最大漏极电流 (ID)0.27 A
最大漏源导通电阻5 Ω
FET 技术METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss)5 pF
JEDEC-95代码TO-92
JESD-30 代码O-PBCY-T3
元件数量1
端子数量3
工作模式ENHANCEMENT MODE
最高工作温度150 °C
封装主体材料PLASTIC/EPOXY
封装形状ROUND
封装形式CYLINDRICAL
极性/信道类型N-CHANNEL
认证状态Not Qualified
表面贴装NO
端子形式THROUGH-HOLE
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
Base Number Matches1

VN0610LTA相似产品对比

VN0610LTA RNR60H2183BPRE6 VN0610LTR1 VN0610LTR3 VN10KTT1 VN10KTT2 VN0610LTR4
描述 Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Fixed Resistor, Metal Film, 0.125W, 218000ohm, 250V, 0.1% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
Reach Compliance Code unknown not_compliant unknown unknown compliant unknown unknown
ECCN代码 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
端子数量 3 2 3 3 3 3 3
最高工作温度 150 °C 175 °C 150 °C 150 °C 150 °C 150 °C 150 °C
封装形式 CYLINDRICAL Axial CYLINDRICAL CYLINDRICAL SMALL OUTLINE SMALL OUTLINE CYLINDRICAL
表面贴装 NO NO NO NO YES YES NO
包装说明 CYLINDRICAL, O-PBCY-T3 Axial, CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 SMALL OUTLINE, R-PDSO-G3 SMALL OUTLINE, R-PDSO-G3 -
配置 SINGLE WITH BUILT-IN DIODE - SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压 60 V - 60 V 60 V 60 V 60 V 60 V
最大漏极电流 (ID) 0.27 A - 0.27 A 0.27 A 0.27 A 0.27 A 0.27 A
最大漏源导通电阻 5 Ω - 5 Ω 5 Ω 5 Ω 5 Ω 5 Ω
FET 技术 METAL-OXIDE SEMICONDUCTOR - METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
最大反馈电容 (Crss) 5 pF - 5 pF 5 pF 5 pF 5 pF 5 pF
JEDEC-95代码 TO-92 - TO-92 TO-92 - - TO-92
JESD-30 代码 O-PBCY-T3 - O-PBCY-T3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 O-PBCY-T3
元件数量 1 - 1 1 1 1 1
工作模式 ENHANCEMENT MODE - ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
封装主体材料 PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装形状 ROUND - ROUND ROUND RECTANGULAR RECTANGULAR ROUND
极性/信道类型 N-CHANNEL - N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
认证状态 Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
端子形式 THROUGH-HOLE - THROUGH-HOLE THROUGH-HOLE GULL WING GULL WING THROUGH-HOLE
端子位置 BOTTOM - BOTTOM BOTTOM DUAL DUAL BOTTOM
晶体管应用 SWITCHING - SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
晶体管元件材料 SILICON - SILICON SILICON SILICON SILICON SILICON
Base Number Matches 1 - 1 1 1 1 -

 
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