Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92
参数名称 | 属性值 |
厂商名称 | Calogic |
包装说明 | CYLINDRICAL, O-PBCY-T3 |
Reach Compliance Code | unknown |
ECCN代码 | EAR99 |
配置 | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V |
最大漏极电流 (ID) | 0.27 A |
最大漏源导通电阻 | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 5 pF |
JEDEC-95代码 | TO-92 |
JESD-30 代码 | O-PBCY-T3 |
元件数量 | 1 |
端子数量 | 3 |
工作模式 | ENHANCEMENT MODE |
最高工作温度 | 150 °C |
封装主体材料 | PLASTIC/EPOXY |
封装形状 | ROUND |
封装形式 | CYLINDRICAL |
极性/信道类型 | N-CHANNEL |
认证状态 | Not Qualified |
表面贴装 | NO |
端子形式 | THROUGH-HOLE |
端子位置 | BOTTOM |
晶体管应用 | SWITCHING |
晶体管元件材料 | SILICON |
Base Number Matches | 1 |
VN0610LTA | RNR60H2183BPRE6 | VN0610LTR1 | VN0610LTR3 | VN10KTT1 | VN10KTT2 | VN0610LTR4 | |
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描述 | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Fixed Resistor, Metal Film, 0.125W, 218000ohm, 250V, 0.1% +/-Tol, 50ppm/Cel, Through Hole Mount, AXIAL LEADED | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Small Signal Field-Effect Transistor, 0.27A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 |
Reach Compliance Code | unknown | not_compliant | unknown | unknown | compliant | unknown | unknown |
ECCN代码 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
端子数量 | 3 | 2 | 3 | 3 | 3 | 3 | 3 |
最高工作温度 | 150 °C | 175 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
封装形式 | CYLINDRICAL | Axial | CYLINDRICAL | CYLINDRICAL | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL |
表面贴装 | NO | NO | NO | NO | YES | YES | NO |
包装说明 | CYLINDRICAL, O-PBCY-T3 | Axial, | CYLINDRICAL, O-PBCY-T3 | CYLINDRICAL, O-PBCY-T3 | SMALL OUTLINE, R-PDSO-G3 | SMALL OUTLINE, R-PDSO-G3 | - |
配置 | SINGLE WITH BUILT-IN DIODE | - | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压 | 60 V | - | 60 V | 60 V | 60 V | 60 V | 60 V |
最大漏极电流 (ID) | 0.27 A | - | 0.27 A | 0.27 A | 0.27 A | 0.27 A | 0.27 A |
最大漏源导通电阻 | 5 Ω | - | 5 Ω | 5 Ω | 5 Ω | 5 Ω | 5 Ω |
FET 技术 | METAL-OXIDE SEMICONDUCTOR | - | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
最大反馈电容 (Crss) | 5 pF | - | 5 pF | 5 pF | 5 pF | 5 pF | 5 pF |
JEDEC-95代码 | TO-92 | - | TO-92 | TO-92 | - | - | TO-92 |
JESD-30 代码 | O-PBCY-T3 | - | O-PBCY-T3 | O-PBCY-T3 | R-PDSO-G3 | R-PDSO-G3 | O-PBCY-T3 |
元件数量 | 1 | - | 1 | 1 | 1 | 1 | 1 |
工作模式 | ENHANCEMENT MODE | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
封装主体材料 | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
封装形状 | ROUND | - | ROUND | ROUND | RECTANGULAR | RECTANGULAR | ROUND |
极性/信道类型 | N-CHANNEL | - | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
认证状态 | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
端子形式 | THROUGH-HOLE | - | THROUGH-HOLE | THROUGH-HOLE | GULL WING | GULL WING | THROUGH-HOLE |
端子位置 | BOTTOM | - | BOTTOM | BOTTOM | DUAL | DUAL | BOTTOM |
晶体管应用 | SWITCHING | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
晶体管元件材料 | SILICON | - | SILICON | SILICON | SILICON | SILICON | SILICON |
Base Number Matches | 1 | - | 1 | 1 | 1 | 1 | - |
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