RF Power Field Effect Transistor
LDMOS, 2110 — 2170 MHz, 60W, 28V
4/6/2005
Preliminary
MAPLST2122-060CF
Features
Designed for W-CDMA base station
applications in the 2.1 to 2.2 GHz Frequency
Band. Suitable for TDMA, CDMA, and
multicarrier power amplifier applications.
60W output power at P
1dB
(CW)
12dB Minimum Gain at P
1dB
(CW)
W-CDMA Typical Performance:
(28V
DC
, -45dB ACPR @ 4.096MHz)
Output Power: 7.5W (typ.)
Gain: 12dB (typ.)
Efficiency: 16% (typ.)
10:1 VSWR Ruggedness (CW @ 60W,
28V, 2110MHz)
Package Style
MAPLST2122-060CF
Maximum Ratings
Parameter
Drain—Source Voltage
Gate—Source Voltage
Total Power Dissipation @ T
C
= 25 °C
Storage Temperature
Junction Temperature
Symbol
V
DSS
V
GS
P
D
T
STG
T
J
Rating
65
20
175
-40 to +150
+200
Units
V
dc
V
dc
W
°C
°C
Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Symbol
R
ΘJC
Max
1.0
Unit
ºC/W
NOTE—CAUTION—MOS devices are susceptible to damage from electrostatic charge. Precautions in handling and packaging
MOS devices should be observed.
RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V
MAPLST2122-060CF
4/6/2005
Preliminary
Characteristic
DC CHARACTERISTICS @ 25ºC
Characteristic
Drain-Source Breakdown Voltage
(V
GS
= 0 Vdc, I
D
= 20 µAdc)
OFF CHARACTERISTICS
Zero Gate Voltage Drain Leakage Current
(V
DS
= 28 Vdc, V
GS
= 0)
65
DS
GS
Gate—Source Leakage Current Current
Zero Gate Voltage Drain Leakage
(V
GS
= 5 Vdc, VV = = 0)
(V = 26 Vdc,
DS
0)
DS
GS
Symbol
Min
Typ
Max
Unit
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
I
DSS
V
GS(th)
I
GSS
V
DS(Q)
V
DS(on)
Gm
Min
65
—
—
—
—
2
—
2
—
—
Typ
—
—
—
—
—
—
—
—
0.4
2.4
Max
—
1
10
11
1
4
Unit
Vdc
µAdc
µAdc
µAdc
µAdc
Vdc
µAdc
Vdc
Vdc
S
Gate Threshold Voltage
Gate—Source Leakage Current
(V
DS
= 10 Vdc, I
D
= 1 mA)
(V
GS
= 5 Vdc, V
DS
= 0)
Gate Quiescent Voltage
ON
(V
DS
= 28 Vdc, I
D
= 500 mA)
CHARACTERISTICS
Drain-Source On-Voltage
(V
GS
= 10 Vdc, I
D
= 1 A)
Forward Transconductance
(V
GS
= 10 Vdc, I
D
= 1 A)
DYNAMIC CHARACTERISTICS @ 25ºC
Input Capacitance (Including Input Matching Capacitor in Package)
DYNAMIC CHARACTERISTICS (1)
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Output Capacitance
(V
DS
= 28 Vdc, V
GS
= 0, f = 1 MHz)
Reverse Transfer Capacitance
FUNCTIONAL TESTS
f = 1
M/A-COM
(In
MHz)
(V
DS
= 28 Vdc, V
GS
= 0,
4.5
—
—
C
iss
C
oss
C
rss
—
—
—
180
65
3.0
—
—
—
pF
pF
pF
Test Fixture) (2)
RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Drain Efficiency
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Input Return Loss
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA,
f1 = 2140.0 MHz, f2 = 2140.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Drain Efficiency
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Two-Tone Common-Source Amplifier Power Gain
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Input Return Loss
(V
DS
= 28 Vdc, P
OUT
= 60 W PEP, I
DQ
= 500 mA, f1 = 2110.0 MHz,
f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)
Output VSWR Tolerance
(V
DD
= 28 Vdc, P
OUT
= 60 W, I
DQ
= 500 mA, f = 2110 MHz,
VSWR = 10:1, All Phase Angles at Frequency of Tests)
G
ps
—
12.0
—
dB
EFF (ŋ)
—
35
—
%
IMD
—
-30
-28
dBc
IRL
—
-12
—
dB
G
ps
—
12.0
—
dB
EFF (ŋ)
—
35
—
%
IMD
—
-30
-28
dBc
IRL
—
-12
-9
dB
Ψ
No Degradation In Output Power
Before and After Test
2
RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V
MAPLST2122-060CF
4/6/2005
Preliminary
C1
Ceramic Chip Capacitor, 10 pF
C2,C5
Ceramic Chip Capacitor, 0.5 pF
C3,C4
Ceramic Chip Capacitor, 1.8 pF
C6,C7,C12,C13
Chip Capacitor, 8.2 pF
C8, C10 Chip Capacitor, 1
µF
C9, C11 Chip Capacitor, 0.1
µF
C14,C15 Ceramic Capacitor, 100
µF
Z1-Z8
Distributed Microstrip Element
J1,J2
SMA Connector, Omni Spectra 2052-5636-02
L1
Inductor, 8 nH, CoilCraft B Series
L2, L3
Inductor, 18.5 nH, CoilCraft B Series
P1,P2
Connector, 5 Pin
Q1
Transistor, MAPLST2122-060CF
R1
Chip Resistor, 10 Ohm
PC Board (74350144-01), Arlon Woven Glass
Teflon .030” Thick, Er=2.54, 2 Oz Copper
Both Sides
Figure 1. 2110—2170 MHz Test Fixture Schematic
Figure 2. 2110—2170 MHz Test Fixture Component Layout
3
RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V
MAPLST2122-060CF
4/6/2005
Preliminary
14
13
12
V
DD
= 28V, f = 2.17GHz, I
DQ
= 700mA,
3.84MHz BW, 16 DPCH
25
20
15
10
Efficiency
11
10
9
8
7
6
25
Gain
5
0
30
35
40
P
OUT
(dBm) Avg.
Graph 1. W-CDMA: Power Gain and Drain Efficiency vs. Output Power
-30
-35
-40
-45
-50
-55
-60
-65
-70
-75
-80
25
V
DD
= 28V, f = 2.17GHz, I
DQ
= 700mA,
3.84MHz BW, 16 DPCH
ACPR (dBc)
5MHz Offset
10MHz Offset
27
29
31
33
35
37
39
41
P
OUT
(dBm) Avg.
Graph 2. W-CDMA: Adjacent Channel Power Ratio vs. Output Power
4
Efficiency (%)
Gain (dB)
RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V
MAPLST2122-060CF
4/6/2005
Preliminary
Package Dimensions
M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s)
or information contained herein without notice. M/A-COM makes no warranty,
representation or guarantee regarding the suitability of its products for any
particular purpose, nor does M/A-COM assume any liability whatsoever arising out
of the use or application of any product(s) or information.
Visit www.macom.com for additional data sheets and product information.
5
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Tel. (800) 366-2266
Asia/Pacific:
Tel.+81-44-844-8296, Fax +81-44-844-8298
Europe:
Tel. +44 (1344) 869 595, Fax+44 (1344) 300 020
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