MURF1560
Technical Data
Data Sheet N0350, Rev.B
MURF1560 ULTRAFAST RECTIFIER
Features
Ultra-Fast Switching
High Current Capability
Low Reverse Leakage Current
High Surge Current Capability
Plastic Material has UL Flammability Classification 94V-O
This is a Pb − Free Device
All SMC parts are traceable to the wafer lot
ITO-220AC
Additional testing can be offered upon request
Circuit Diagram
Applications
Switching Power Supply
Power Switching Circuits
General Purpose
Maximum Ratings:
Characteristics
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Peak One Cycle Non-Repetitive Surge
Current
Symbol
V
RRM
V
RWM
V
R
I
F (AV)
I
FSM
Condition
-
50% duty cycle @Tc=100°C,
rectangular wave form
8.3ms, Half Sine pulse
Max.
600
15
Units
V
A
T
J
=45C
T
J
=150C
110
95
A
Electrical Characteristics:
Characteristics
Forward Voltage Drop*
Reverse Current*
Reverse Recovery Time
RSM Isolation Voltage
(t=1.0 second,R.H.<
=30%,
T
A
=25C)
Symbol
V
F1
V
F2
I
R1
I
R2
t
rr
Condition
@15A, Pulse, T
J
= 25C
@15A, Pulse, T
J
= 150C
@V
R
= rated V
R
T
J
= 25C
@V
R
= rated V
R
T
J
= 125C
I
F
=500mA, I
R
=1A,and I
rm
=250mA
Clip mouting, the epoxy body away
from the heatsink edge by more than
0.110”along the lead direction.
Clip mouting, the epoxy body is
inside the heatsink
Screw mounting, the epoxy body is
inside the heatsink
Typ.
1.35
-
0.03
0.007
43
-
-
-
Max.
1.7
1.5
25
1
50
4500
3500
1500
V
Units
V
V
μA
mA
ns
V
1so
* Pulse width < 300 µs, duty cycle < 2%
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MURF1560
Technical Data
Data Sheet N0350, Rev.B
Thermal-Mechanical Specifications:
Characteristics
Junction Temperature
Storage Temperature
Typical Thermal Resistance Junction to
Case
Approximate Weight
Case Style
Symbol
T
J
T
stg
R
JC
wt
Condition
DC operation
-
-
-
Specification
-55 to +150
-55 to +150
4
1.6
Units
C
C
C/W
g
ITO-220AC
Ratings and Characteristics Curves
μ
A)
1000
Junction Capacitance. (PF)
100
10
1
0.1
0.01
0.001
10
20
30
40
50
60
70
80
90
100
Percent Of Rated Peak Reverse Voltage. (%)
100
TJ=25℃
Instantaneous Rev erse Current. (
TJ=125℃
TJ=25℃
10
0
5
10
15
20
25
30
35
40
Reverse Voltage. (V)
Fig.1-Typical Junction Capacitance
100
Fig.2-Typical Reverse Characteristics
Instantaneous Forward Current-IF(A)
10
TJ=125℃
TJ=25℃
1
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
Forw ard Voltage Drop-VF(V)
Fig.3-Typical Forward Voltage Drop Characteristics
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MURF1560
Technical Data
Data Sheet N0350, Rev.B
Mechanical Dimensions ITO-220AC
SYMBOL
A
A1
A2
A3
b
b1
b2
c
D
E
e
e1
H1
L
L1
L2
L3
L4
ΦP1(上口)
ΦP2(下口)
Q
Θ1
Θ2
Θ3
Θ4
Θ5
MIN.
4.30
1.10
2.80
2.50
0.50
1.10
1.50
0.50
14.80
9.96
-
5.00
6.50
12.70
1.60
0.80
0.60
-
3.30
2.99
2.50
Millimeters
TYP.
4.50
1.30
3.00
2.70
0.60
1.20
1.60
0.60
15.00
10.16
2.55
5.10
6.70
13.20
1.80
1.00
0.80
1.10
3.50
3.19
2.70
5°
4°
10°
5°
5°
MAX.
4.70
1.50
3.20
2.90
0.75
1.35
1.75
0.75
15.20
10.36
-
5.16
6.90
13.70
2.00
1.20
1.00
1.50
3.70
3.39
2.90
Tube Specification
Marking Diagram
Where XXXXX is YYWWL
MUR
F
15
60
SSG
YY
WW
L
= Device Type
= Package type
= Forward Current (15A)
= Reverse Voltage (600V)
= SSG
= Year
= Week
= Lot Number
Cautions:Molding
resin
Epoxy resin UL:94V-0
Ordering Information
Device
MURF1560
Package
ITO-220AC (Pb-Free)
Shipping
50 pcs/ tube
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging
specification
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MURF1560
Technical Data
Data Sheet N0350, Rev.B
DISCLAIMER:
1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product
characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department
for the latest version of the datasheet(s).
2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment,
medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by
means of users’ fail-safe precautions or other arrangement .
3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any
other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes
no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or
circuits described in the datasheets.
4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary
damage resulting from use at a value exceeding the absolute maximum rating.
5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics
(Nanjing) Co., Ltd.
6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC -
Sangdest Microelectronics (Nanjing) Co., Ltd.
7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder
maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When
exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations..
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