PLA-xx0 series
The Princeton Lightwave
Large Area
APD is a discrete InGaAs/InP ava-
lanche photodetector designed
for high per formance in linear
mode applications requiring a large
optical active area. The device is
intended for use at voltage biases
below breakdown to provide gains
The PLI Large Area APD described
in this datasheet is a front-illumi-
nated device provided either in
a standard TO-18 can with a win-
dow cap or on a custom ceramic.
Devices are available with a clear
optical active area of 80 μm, and 200
μm.
on the order of 10 to 15, for which
most APD-based receivers achieve
optimal performance. This APD has
high responsivity in the wavelength
range from 0.95 to 1.65
μm.
Performance
Specifications
Parameter
Description
Optical Diameter
Breakdown Voltage, V
b
Temperature Dependence of V
b
,
γ
Responsivity, R
Total Dark Current, I
d
Dark Noise Current Density, J
n
Capacitance, C
Bandwidth, F
3dB
Noise Equivalent Power, NEP
1550 nm, M=1
M=10
M=10
M=10, 1 MHz
M=10, 50
Ω
load
1550 nm
0.85
3
0.22
0.8
1.0
0.027
1.0
15
I
d
=10
μA
40
0.15
0.85
10
0.40
1.8
0.4
0.050
2.0
50
Test
Conditions
80
μm
APD
Specifications
Min. Typ. Max.
80
80
40
0.15
200
μm
APD
Specifications
Min.
Typ.
Max.
200
80
V/° C
A/W
nA
pA/ Hz
pF
GHz
pW/ Hz
Units
μm
V
NOTES:
[1] All specifications at 22 °C, unless noted otherwise.
[2] All currents and voltages are reverse bias, unless noted otherwise.
[3] Capacitance values for APD chip only. Packaged-related capacitance will add to these values.
Maximum
Ratings
Parameter
Storage Temperature
Operating Temperature
Forward Current
Forward Voltage
Reverse Current
Reverse Voltage
Optical Power (cw)
Assumes beam spot > 50
μm
diameter
Conditions
Min.
-40
-40
Max.
+85
+85
+1
+1
-1
V
b
1
Units.
°C
°C
mA
V
mA
V
mW
Maximum ratings indicate conditions under which the device may be damaged during short periods of time
and which should be avoided.
Mechanical
Specifications
APD in TO-18 package
The TO-18 package is an industry-standard format in
which the chip is mounted directly to the center pin
of the package.
The TO-18 package adds approximately 0.15 pF to the
chip capacitance.
TO-18 Pin-out
Pin
#1
#2
Description
Cathode
Anode
APD on Ceramic Submount
PLI’s large area APDs can be provided on a cus-
tomer-supplied submount or on a submount of PLI’s
design. The submount will generally add ap-
proximately 0.1 to 0.2 pF of capacitance to the chip
capacitance, although this value will depend on the
submount design.
Product Handling
These avalanche photodiodes are sensitive to electrostatic
discharge (ESD) and should be handled with appropriate
caution, including the use of ESD protective equipment
such as grounding straps and anti-static mats.
Ordering Information
Product Number Description
PLA-280
80
μm
APD in TO-18
PLA-200
200
μm
APD in TO-18
PLA-180
80
μm
APD on Submount
PLA-100
200
μm
APD on Submount
Princeton Lightwave, Inc.
2555 Route 130 South Suite 1, Cranbury, NJ 08512
Tel: 609.495.2600
Fax: 609.395.9114
email: sales@princetonlightwave.com
website: www.princetonlightwave.com
Princeton Lightwave, Inc. reserves the right to make changes to
the product(s) and information contained herein without notice.
No liability is assumed by Princeton Lightwave as a result of the
use or application of this product.
Copyright 2005 Princeton Lightwave, Inc.
All rights reserved.
PLA-xx0 Series Ver 1.0 - 01-07
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