VS-ST780CL Series
www.vishay.com
Vishay Semiconductors
Phase Control Thyristors
(Hockey PUK Version), 1350 A
FEATURES
• Center amplifying gate
• Metal case with ceramic insulator
• International standard case TO-200AC (B-PUK)
• Designed and qualified for industrial level
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
TO-200AC (B-PUK)
• DC motor controls
• Controlled DC power supplies
• AC controllers
PRODUCT SUMMARY
Package
Diode variation
I
T(AV)
V
DRM
/V
RRM
V
TM
I
GT
T
J
TO-200AC (B-PUK)
Single SCR
1350 A
400 V, 600 V
1.31 V
100 mA
-40 °C to 125 °C
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
I
T(AV)
TEST CONDITIONS
VALUES
1350
T
hs
55
2700
I
T(RMS)
T
hs
50 Hz
I
TSM
60 Hz
50 Hz
60 Hz
V
DRM
/V
RRM
t
q
T
J
v
Typical
25
24 400
A
25 600
2986
2726
400 to 600
150
-40 to 125
V
µs
°C
kA
2
s
UNITS
A
°C
A
°C
I
2
t
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
TYPE NUMBER
VOLTAGE
CODE
04
06
V
DRM
/V
RRM
, MAXIMUM REPETITIVE
PEAK AND OFF-STATE VOLTAGE
V
400
600
V
RSM
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
V
500
700
I
DRM
/I
RRM
MAXIMUM
AT T
J
= T
J
MAXIMUM
mA
80
VS-ST780C..L
Revision: 20-Dec-13
Document Number: 94415
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST780CL Series
www.vishay.com
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Maximum average on-state current
at heatsink temperature
Maximum RMS on-state current
SYMBOL
I
T(AV)
I
T(RMS)
TEST CONDITIONS
180° conduction, half sine wave
double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled
t = 10 ms
Maximum peak, one-cycle
non-repetitive surge current
I
TSM
t = 8.3 ms
t = 10 ms
t = 8.3 ms
t = 10 ms
Maximum I
2
t for fusing
I
2
t
t = 8.3 ms
t = 10 ms
t = 8.3 ms
Maximum I
2
t
for fusing
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum on-state voltage
Maximum holding current
Typical latching current
I
2
t
V
T(TO)1
V
T(TO)2
r
t1
r
t2
V
TM
I
H
I
L
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
reapplied
100 % V
RRM
reapplied
VALUES
1350 (500)
55 (85)
2700
24 400
25 600
20 550
Sinusoidal half wave,
initial T
J
= T
J
maximum
21 500
2986
2726
2112
1928
29 860
0.80
0.90
0.14
0.13
1.31
600
1000
kA
2
s
V
kA
2
s
A
UNITS
A
°C
t = 0.1 to 10 ms, no voltage reapplied
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
(16.7 % x
x I
T(AV)
< I <
x I
T(AV)
), T
J
= T
J
maximum
(I >
x I
T(AV)
), T
J
= T
J
maximum
I
pk
= 3600 A, T
J
= T
J
maximum, t
p
= 10 ms sine pulse
T
J
= 25 °C, anode supply 12 V resistive load
m
V
mA
SWITCHING
PARAMETER
Maximum non-repetitive rate of rise
of turned-on current
Typical delay time
Typical turn-off time
SYMBOL
dI/dt
t
d
t
q
TEST CONDITIONS
Gate drive 20 V, 20
,
t
r
1 μs
T
J
= T
J
maximum, anode voltage
80 % V
DRM
Gate current 1 A, dI
g
/dt = 1 A/μs
V
d
= 0.67 % V
DRM
, T
J
= 25 °C
I
TM
= 750 A, T
J
= T
J
maximum, dI/dt = 60 A/μs,
V
R
= 50 V, dV/dt = 20 V/μs, gate 0 V 100
,
t
p
= 500 μs
VALUES
1000
1.0
µs
150
UNITS
A/µs
BLOCKING
PARAMETER
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
SYMBOL
dV/dt
I
RRM
,
I
DRM
TEST CONDITIONS
T
J
= T
J
maximum linear to 80 % rated V
DRM
T
J
= T
J
maximum, rated V
DRM
/V
RRM
applied
VALUES
500
80
UNITS
V/µs
mA
Revision: 20-Dec-13
Document Number: 94415
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST780CL Series
www.vishay.com
Vishay Semiconductors
TRIGGERING
PARAMETER
Maximum peak gate power
Maximum average gate power
Maximum peak positive gate current
Maximum peak positive gate voltage
Maximum peak negative gate voltage
SYMBOL
P
GM
P
G(AV)
I
GM
+ V
GM
- V
GM
I
GT
TEST CONDITIONS
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, f = 50 Hz, d% = 50
T
J
= T
J
maximum, t
p
5 ms
T
J
= T
J
maximum, t
p
5 ms
T
J
= -40 °C
DC gate current required to trigger
T
J
= 25 °C
T
J
= 125 °C
T
J
= -40 °C
DC gate voltage required to trigger
V
GT
T
J
= 25 °C
T
J
= 125 °C
DC gate current not to trigger
I
GD
T
J
= T
J
maximum
DC gate voltage not to trigger
V
GD
Maximum gate
current/voltage not to trigger
is the maximum value which
will not trigger any unit with
rated V
DRM
anode to cathode
applied
Maximum required gate
trigger/current/voltage are the
lowest value which will trigger
all units 12 V anode to cathode
applied
200
100
50
2.5
1.8
1.1
10
VALUES
TYP.
MAX.
UNITS
10.0
2.0
3.0
20
5.0
-
200
-
-
3.0
-
W
A
V
mA
V
mA
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
Maximum operating junction temperature range
Maximum storage temperature range
Maximum thermal resistance, junction to heatsink
SYMBOL
T
J
T
Stg
R
thJ-hs
DC operation single side cooled
DC operation double side cooled
DC operation single side cooled
DC operation double side cooled
TEST CONDITIONS
VALUES
-40 to 125
-40 to 150
0.073
0.031
0.011
0.006
14 700
(1500)
255
See dimensions - link at the end of datasheet
N
(kg)
g
K/W
UNITS
°C
Maximum thermal resistance, case to heatsink
Mounting force, ± 10 %
Approximate weight
Case style
R
thC-hs
TO-200AC (B-PUK)
R
thJ-hs
CONDUCTION
CONDUCTION ANGLE
180°
120°
90°
60°
30°
SINUSOIDAL CONDUCTION
SINGLE SIDE
0.009
0.011
0.014
0.020
0.036
DOUBLE SIDE
0.009
0.011
0.014
0.020
0.036
RECTANGULAR CONDUCTION
SINGLE SIDE
0.006
0.011
0.015
0.021
0.036
DOUBLE SIDE
0.006
0.011
0.015
0.021
0.036
T
J
= T
J
maximum
K/W
TEST CONDITIONS
UNITS
Note
• The table above shows the increment of thermal resistance R
thJ-hs
when devices operate at different conduction angles than DC
Revision: 20-Dec-13
Document Number: 94415
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST780CL Series
www.vishay.com
Vishay Semiconductors
Maximum Allowable Heats T
ink emperature (°C)
130
120
110
100
90
80
70
60
50
40
30
20
0
500
30°
60°
90°
120°
180°
DC
1000 1500 2000 2500 3000
Conduction Period
Maximum Allowable Heats T
ink emperature (°C)
130
120
110
100
90
S 780C..L S
T
eries
(S
ingle S
ide Cooled)
R
thJ-hs
(DC) = 0.073 K/ W
S 780C..L S
T
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
Conduction Angle
80
70
60
50
40
0
200
400
600
800
1000
Average On-state Current (A)
30°
60°
90°
120°
180°
Average On-state Current (A)
Fig. 1 - Current Ratings Characteristics
Maximum Allowable Heatsink T
emperature (°C)
Maximum Average On-s
tate Power Loss (W)
Fig. 4 - Current Ratings Characteristics
2500
180°
120°
90°
60°
30°
RMS Limit
130
120
110
100
90
80
70
60
50
40
30
20
0
200
400
30°
S
T780C..L S
eries
(S
ingle S Cooled)
ide
R
thJ-hs
(DC) = 0.073 K/ W
2000
1500
Conduction Period
1000
Conduc tion Angle
60°
90°
120°
600
180°
500
S 780C..L S
T
eries
T
J
= 125°C
DC
0
0
400
800
1200
1600
2000
Average On-state Current (A)
800 1000 1200 1400
Average On-state Current (A)
Fig. 2 - Current Ratings Characteristics
Maximum Allowable Heats Temp erature (°C)
ink
130
120
110
100
90
80
70
60
50
40
30
20
0
400
800
1200
1600
2000
Average On-state Current (A)
30°
60°
90°
120°
Conduction Angle
Fig. 5 - On-State Power Loss Characteristics
Maximum Average On-state Power Loss (W)
3500
3000
2500
2000
1500
1000
500
0
0
500
1000 1500 2000 2500 3000
Average On-state Current (A)
S 780C..L S
T
eries
T = 125°C
J
RMS Limit
Conduction Period
S
T780C..L S
eries
(Double S Cooled)
ide
R
thJ-hs
(DC) = 0.031 K/ W
DC
180°
120°
90°
60°
30°
180°
Fig. 3 - Current Ratings Characteristics
Fig. 6 - On-State Power Loss Characteristics
Revision: 20-Dec-13
Document Number: 94415
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
VS-ST780CL Series
www.vishay.com
Vishay Semiconductors
Peak Half S Wave On-state Current (A)
ine
26000
Maximum Non Repetitive S
urge Current
Vers Puls Train Duration. Control
us
e
24000
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
22000
No Voltage Reapplied
Rated V
RRM
Reapplied
20000
18000
16000
14000
12000
S 780C..L S
T
eries
Peak Half S Wave On-state Current (A)
ine
22000
20000
18000
16000
14000
12000
10000
1
At Any Rated Load Condition And With
Rated V
RRM
Applied Following S
urge.
Initial T = 125°C
J
@60 Hz 0.0083 s
@50 Hz 0.0100 s
S 780C..L S
T
eries
10
100
10000
0.01
0.1
Pulse T
rain Duration (s)
1
Number Of Equal Amplitude Half Cyc le Current Pulses (N)
Fig. 7 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
Fig. 8 - Maximum Non-Repetitive Surge Current
Single and Double Side Cooled
10000
Instantaneous On-state Current (A)
T = 25°C
J
1000
T = 125°C
J
S 780C..L S
T
eries
100
0.5
1
1.5
2
2.5
Instantaneous On-state Voltage (V)
Fig. 9 - On-State Voltage Drop Characteristics
T
rans
ient T
hermal Impedance Z
thJ-hs
(K/ W)
0.1
S
teady S
tate Value
R
thJ-hs
= 0.073 K/ W
(S
ingle S
ide Cooled)
R
thJ-hs
= 0.031 K/ W
(Double S Cooled)
ide
0.01
(DC Operation)
S 780C..L S
T
eries
0.001
0.001
0.01
0.1
S
quare Wave Puls Duration (s)
e
1
10
Fig. 10 - Thermal Impedance Z
thJ-hs
Characteristics
Revision: 20-Dec-13
Document Number: 94415
5
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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