PHOTODIODE
Si photodiode
S5493-01, etc.
Photodiodes molded into clear plastic packages
These are Si photodiodes molded into clear plastic packages.
Spectral response characteristics for these Si photodiodes can be selected to meet your application, from among the visible range, visible to near
IR range, and visible to infrared range. Two active areas of 1.3 × 1.3 mm and 2.4 × 2.8 mm are also available.
S5493-01 and S5627-01 provide a spectral response characteristic similar to the visible range sensitivity without using visual-compensated filters.
Features
Applications
l
S5493-01, S5627-01: Visible range (Filterless type)
l
S4797-01, S6931 : Visible to near IR range
l
S2833-01, S4011-02: Visible to infrared range
l
Exposure meter
l
Illuminometer
l
Camera auto exposure
l
Stroboscope light control
l
Copier
l
Display light control
l
Optical switch
s
General ratings / Absolute maximum ratings
Type No.
Dimensional
outline/
Window
material *
Active area
size
(mm)
2.4 × 2.8
1.3 × 1.3
2.4 × 2.8
1.3 × 1.3
2.4 × 2.8
1.3 × 1.3
Effective
active area
(mm
2
)
6.6
1.6
6.6
1.6
6.6
1.6
Absolute maximum ratings
Reverse
Operating
Storage
voltage
temperature
temperature
V
R
Max.
Topr
Tstg
(V)
(°C)
(°C)
S5493-01
➀/R
S5627-01
➁/R
S6931
➂/R
S4797-01
➃/R
S2833-01
➄/R
S4011-02
➅/R
* Window material R: clear resin coating
10
-25 to +85
-40 to +100
s
Electrical and optical characteristics (Typ. Ta=25 °C, unless otherwise noted)
Spectral
Peak
response
sensitivity
range
wavelength
λp
λ
(nm)
320 to
840
320 to
1000
320 to
1100
(nm)
540
720
960
Photo sensitivity
Short
Dark
Temp.
Rise
Terminal
Temp.
Shunt
S
Infrared circuit
current
coefficient
time
capacitance
coefficient
resistance
(A/W)
tr
Ct
I
D
of
sensitivity
current
Rsh
of
V
R
=0 V V
R
=0 V
Isc
ratio
I
D
V
R
=1 V
GaP
He-Ne
Isc
R
=10 mV
V
λp
100
lx
Max. T
CID
R
L
=1 kΩ
f=10 kHz
LED laser
Min. Typ.
560 nm 633 nm (%)
(µA) (%/°C) (pA)
(times/°C)
(µs)
(pF)
(GΩ) (GΩ)
1.0
100
10
3000 0.1 1
0.3
0.28
0.2
35
0.25
1.13
0.25
50
2
700 0.5 5
0.48
0.4
0.45
4.2
0.5
200
20
50
0.4
0.37
1.2
0.2
50
-
0.1
1.12
10
6.5
2.5
700
100
0.33
0.58
0.38
10
1.9
0.5
200
250
Type No.
S5493-01
S5627-01
S6931
S4797-01
S2833-01
S4011-02
Si photodiode
s
Dimensional outlines (unit: mm, tolerance unless otherwise noted: ±0.1 mm)
➀
S5493-01
4.6 ± 0.2
(INCLUDING BURR)
5.6 ± 0.2
(INCLUDING BURR)
1.0 ± 0.4 (
0.7
0.5
PIN LEAD)
S5493-01, etc.
➁
S5627-01
0.6
0.5
4.1 ± 0.2
(INCLUDING BURR)
1.6 ± 0.4 (
PIN LEAD)
5.0 ± 0.2
(INCLUDING BURR)
4.7 *
2.54
5.4 *
5.5 *
10˚
10˚
3˚
0.4
0.8
1.8
4.5 *
0.6
1.0
4.0 *
5.75 ± 0.2
5˚
PHOTOSENSITIVE
SURFACE
2.0
5.2 ± 0.2
10˚
PHOTOSENSITIVE
SURFACE
4.5 ± 0.4
4.5 ± 0.4
3˚
CATHODE
SUB
ANODE
SUB (SHORT LEAD)
0.25
5˚
CATHODE
SUB
ANODE
SUB (SHORT LEAD)
7.5 ± 5˚
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
SUB terminal should be
open-circuited at use.
0.25
7.5 ± 5˚
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
SUB terminal should be
open-circuited at use.
KSPDA0118EA
5˚
2.54
0.6
0.5
2.54
KSPDA0119EA
➂
S6931
4.6 ± 0.2
(INCLUDING BURR)
➃
S4797-01
4.1 ± 0.2
(INCLUDING BURR)
0.5
5.6 ± 0.2
(INCLUDING BURR)
0.7
5.0 ± 0.2
(INCLUDING BURR)
5.4 *
5.5 *
2.54
4.7 *
10˚
10˚
(0.8)
5.0 ± 0.4
(1.0) (1.0)
4.5 *
(0.8)
5.0 ± 0.4
3˚
4.0 *
5.2 ± 0.2
0.4
0.8
1.8
14.5 ± 0.3
10˚
NC
CATHODE
ANODE
CATHODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
PHOTOSENSITIVE
SURFACE
NC
CATHODE
ANODE
CATHODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
0.3 MAX.
PHOTOSENSITIVE
5˚ SURFACE
0.6
1.0
4.5 ± 0.4
2.0
0.25
0.3 MAX.
3˚
0.25
5˚
7.5 ± 5˚
KSPDA0122EA
5˚
4.8 *
KSPDA0121EA
4.8 *
Si photodiode
➄
S2833-01
4.6 ± 0.2
(INCLUDING BURR)
0.7
0.5
5.6 ± 0.2
(INCLUDING BURR)
S5493-01, etc.
➅
S4011-02
4.1 ± 0.2
(INCLUDING BURR)
0.6
0.5
5.0 ± 0.2
(INCLUDING BURR)
5.4 *
5.5 *
2.54
4.7 *
10˚
10˚
3˚
(0.8)
5.0 ± 0.4
(1.0) (1.0)
4.5 *
(0.8)
5.0 ± 0.4
(0.8)
4.9 ± 0.4
(1.25)(1.25)
4.0 *
(0.8)
4.9 ± 0.4
0.3 MAX.
0.3 MAX.
0.7
1.0
0.5
0.8
14.5 ± 0.3
PHOTOSENSITIVE
5˚ SURFACE
NC
CATHODE
ANODE
CATHODE
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
2.0
10˚
13.8 ± 0.3
PHOTOSENSITIVE
SURFACE
NC
CATHODE
ANODE
CATHODE
1.8
0.3 MAX.
5˚
3˚
Chip position accuracy with
respect to the package
dimensions marked *
X, Y
≤
±0.2
θ ≤
±2˚
0.3 MAX.
0.25
KSPDA0123EA
0.25
KSPDA0060EA
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions.
Specifications are subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2001 Hamamatsu Photonics K.K.
HAMAMATSU PHOTONICS K.K., Solid State Division
1126-1 Ichino-cho, Hamamatsu City, 435-8558 Japan, Telephone: (81) 053-434-3311, Fax: (81) 053-434-5184, http://www.hamamatsu.com
U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J. 08807-0910, U.S.A., Telephone: (1) 908-231-0960, Fax: (1) 908-231-1218
Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-82211 Herrsching am Ammersee, Germany, Telephone: (49) 08152-3750, Fax: (49) 08152-2658
France: Hamamatsu Photonics France S.A.R.L.: 8, Rue du Saule Trapu, Parc du Moulin de Massy, 91882 Massy Cedex, France, Telephone: 33-(1) 69 53 71 00, Fax: 33-(1) 69 53 71 10
United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) 1707-294888, Fax: (44) 1707-325777
North Europe: Hamamatsu Photonics Norden AB: Smidesvägen 12, SE-171 41 Solna, Sweden, Telephone: (46) 8-509-031-00, Fax: (46) 8-509-031-01
Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1/E, 20020 Arese, (Milano), Italy, Telephone: (39) 02-935-81-733, Fax: (39) 02-935-81-741
Cat. No. KSPD1025E01
Apr. 2001 DN
5˚
4.8 *
2.54
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