ZXMN6A08K,ZXMN6A08K pdf中文资料,ZXMN6A08K引脚图,ZXMN6A08K电路-Datasheet-电子工程世界

ZXMN6A08K: 产品描述5.36 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA; 产品类别半导体分立半导体; 文件大小652KB，共8页; 制造商Diodes; 官网地址http://www.diodes.com/

下载文档详细参数选型对比全文预览

ZXMN6A08K概述

5.36 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

5.36 A, 60 V, 0.08 ohm, N沟道, 硅, POWER, 场效应管, TO-252AA

	ZXMN6A08K	ZXMN6A08KTC
描述	5.36 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA	5.36 A, 60 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
端子数量	2	2
最小击穿电压	60 V	60 V
加工封装描述	GREEN, PLASTIC, TO-252, 3 PIN	GREEN, PLASTIC, TO-252, 3 PIN
欧盟RoHS规范	Yes	Yes
状态	ACTIVE	ACTIVE
包装形状	RECTANGULAR	RECTANGULAR
包装尺寸	SMALL OUTLINE	SMALL OUTLINE
表面贴装	Yes	Yes
端子形式	GULL WING	GULL WING
端子涂层	MATTE TIN	MATTE TIN
端子位置	SINGLE	SINGLE
包装材料	PLASTIC/EPOXY	PLASTIC/EPOXY
结构	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
壳体连接	DRAIN	DRAIN
元件数量	1	1
晶体管应用	SWITCHING	SWITCHING
晶体管元件材料	SILICON	SILICON
通道类型	N-CHANNEL	N-CHANNEL
场效应晶体管技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
操作模式	ENHANCEMENT	ENHANCEMENT
晶体管类型	GENERAL PURPOSE POWER	GENERAL PURPOSE POWER
最大漏电流	5.36 A	5.36 A
最大漏极导通电阻	0.0800 ohm	0.0800 ohm
最大漏电流脉冲	24.3 A	24.3 A

器件捷径: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W