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CY7C1320V18-167BZC

产品描述DDR SRAM, 512KX36, 0.4ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
产品类别存储    存储   
文件大小440KB,共24页
制造商Cypress(赛普拉斯)
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CY7C1320V18-167BZC概述

DDR SRAM, 512KX36, 0.4ns, CMOS, PBGA165, 13 X 15 MM, 1.20 MM HEIGHT, FBGA-165

CY7C1320V18-167BZC规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
厂商名称Cypress(赛普拉斯)
零件包装代码BGA
包装说明13 X 15 MM, 1.20 MM HEIGHT, FBGA-165
针数165
Reach Compliance Codecompliant
ECCN代码3A991.B.2.A
Base Number Matches1

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PRELIMINARY
CY7C1316V18
CY7C1318V18
CY7C1320V18
18-Mb DDR-II SRAM Two-word
Burst Architecture
Features
• 18-Mb density (2M x 8, 1M x 18, 512K x 36)
— Supports concurrent transactions
• 250-MHz clock for high vandwidth
• Two-word burst for reducing address bus frequency
• Double Data Rate (DDR) interfaces (data transferred at
500 MHz) @ 250 MHz
• Two input clocks (K and K) for precise DDR timing
— SRAM uses rising edges only
• Two output clocks (C and C) accounts for clock skew
and flight time mismatches
• Echo clocks (CQ and CQ) simplify data capture in high
speed systems
• Synchronous internally self-timed writes
• 1.8V core power supply with HSTL inputs and outputs
• Variable drive HSTL output buffers
• Expanded HSTL output voltage (1.4V–V
DD
)
• 13x15 mm 1.0-mm pitch fBGA package, 165 ball (11x15
matrix)
• JTAG interface
• On-chip Delay Lock Loop (DLL)
Functional Description
The CY7C1316V18/CY7C1318V18/CY7C1320V18 are 1.8V
Synchronous Pipelined SRAM equipped with DDR-II (Double
Data Rate) architecture. The DDR-II consists of an SRAM core
with advanced synchronous peripheral circuitry and a 1-bit
burst counter. Addresses for Read and Write are latched on
alternate rising edges of the input (K) clock.Write data is regis-
tered on the rising edges of both K and K. Read data is driven
on the rising edges of C and C if provided, or on the rising edge
of K and K if C/C are not provided. Each address location is
associated with two 8-bit words in the case of CY7C1316V18
that burst sequentially into or out of the device. The burst
counter always starts with a “0” internally in the case of
CY7C1316V18. On CY7C1318V18 and CY7C1320V18, the
burst counter takes in the least significant bit of the external
address and bursts two 18-bit words in the case of
CY7C1318V18 and two 36-bit words in the case of
CY7C1320V18 sequentially into or out of the device.
Asynchronous inputs include impedance match (ZQ).
Synchronous data outputs (Q, sharing the same physical pins
as the data inputs D) are tightly matched to the two output echo
clocks CQ/CQ, eliminating the need for separately capturing
data from each individual DDR SRAM in the system design.
Output data clocks (C/C) enable maximum system clocking
and data synchronization flexibility.
All synchronous inputs pass through input registers controlled
by the K or K input clocks. All data outputs pass through output
registers controlled by the C or C input clocks. Writes are
conducted with on-chip synchronous self-timed write circuitry.
Configurations
CY7C1316V18 – 2M x 8
CY7C1318V18 – 1M x 18
CY7C1320V18 – 512K x 36
Logic Block Diagram (CY7C1316V18)
Burst
Logic
A
(19:0)
20
LD
K
K
Write Add. Decode
Read Add. Decode
Address
Register
Write
Reg
1M x 8 Array
Write
Reg
1M x 8 Array
8
Output
Logic
Control
CLK
Gen.
R/W
C
C
CQ
Read Data Reg.
16
Control
Logic
8
Reg.
8
Reg.
8
Reg.
V
REF
R/W
BWS
[1:0]
8
CQ
DQ
[7:0]
Cypress Semiconductor Corporation
Document #: 38-05177 Rev. *A
3901 North First Street
San Jose
CA 95134 • 408-943-2600
Revised July 31, 2002

 
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