SILICON BRIDGE DIODES
USKB
SERIES
UL File No. E142422
Summary
Bridge diodes are being required to take up less space accompanying the reduced size of electronic
equipment. In order to respond to these needs, Shindengen has developed a new package in offering a
complete lineup of bridge diodes that can be used in a wide range of power supply environments.
Features
Rectified forward current : 4A
（US4KB80R）
6A
,
（US6KB80R）
8A
,
（US8KB80R）
,
（with
heat sink）
10A
（US10KB80R）
15A
,
（US15KB80R）
30A
,
（US30KB80R）
●
Large current capacity of 30A with compact package
●
High
I
FSM
and High Voltage
●
UL approved Bridge Rectifier Diodes, registered in file number E142422
●
High-density mounting for improved space efficiency through the use of SIP
（Single
In-Line Package）
●
Application
TV, Monitor, Switching power supply, PC, Audio, Printer
RATINGS
●
Absolute Maximum Ratings
（
Tc=25
℃／
Unless otherwise specified
）
Item
Symbol
Conditions
US4KB80R US6KB80R US8KB80R
−55∼150
150
800
Unit
Storage Temperature
Operation Junction Temperature
Maximun Reverse Voltage
Average Rectified Forward Current
Tstg
Tj
V
RM
With heatsink
℃
℃
V
8
（Tc=108℃）
4
（Tc=125℃）
6
（Tc=116℃）
Io
60Hz sine wave,
Resistance load
Without heatsink
2.1
（Ta=30℃）
2.1
（Ta=30℃）
2.2
（Ta=26℃）
A
I
FSM
Peak Surge Forward Current
I
FSM
1
60Hz sine wave, Non-repetitive 1cycle peak value,
Tj=25℃
Non−repetitive, Tj=25℃
Tj=25℃, Per diode
Terminals to cace, AC 1 minute
150
245
（tp=3ms）
175
470
（tp=1ms）
200
575
（tp=1ms）
A
Current Squared Time
Dielectric Strength
Mounting Torque
●
I
2
t
Vdis
93
112
2.0
0.8
166
（3ms≦t＜8.3ms） （1ms≦t＜8.3ms） （1ms≦t＜8.3ms）
A
2
s
kV
N m
・
：
・
TOR
（Recommended torque 0.5N m）
Electrical Characteristics
（
Tc=25
℃／
Unless otherwise specified
）
V
F
I
R
θ
jc
Pulse measurement, Per diode
V
R
=800V, Pulse measurement, Per diode
Junction to case, With heatsink
Junction to lead, Without heatsink
Junction to ambient, Without heatsink
Forward Voltage
Reverse Current
MAX. 1.00
（I
F
=2A）
MAX. 1.00
（I
F
=3A）
MAX. 1.00
（I
F
=4A）
V
μA
MAX. 10
MAX. 3.5
MAX. 3.0
MAX.
5
MAX. 2.8
Thermal Resistance
θ
jl
θ
ja
℃/W
MAX. 35
US4K80R
US6K80R
US8K80R
Type No.
●
Absolute Maximum Ratings
（
Tc=25
℃／
Unless otherwise specified
）
Item
Symbol
Conditions
US10KB80R US15KB80R US30KB80R
−55∼150
150
800
Unit
Storage Temperature
Operation Junction Temperature
Maximun Reverse Voltage
Average Rectified Forward Current
Tstg
Tj
V
RM
With heatsink
℃
℃
V
30
（Tc=97℃）
10
（Tc=100℃）
15
（Tc=101℃）
Io
60Hz sine wave,
Resistance load
Without heatsink
2
（Ta=28℃）
2
（Ta=30℃）
2.1
（Ta=27℃）
A
I
FSM
Peak Surge Forward Current
I
FSM
1
60Hz sine wave, Non−repetitive 1cycle peak value,
Tj=25℃
Non-repetitive, Tj=25℃
Tj=25℃, Per diode
Terminals to cace, AC 1 minute
150
245
（tp=3ms）
200
330
（tp=3ms）
350
1000
（tp=1ms）
A
A
2
s
kV
N m
・
Current Squared Time
Dielectric Strength
Mounting Torque
●
I
2
t
Vdis
93
166
2.0
0.8
510
（3ms≦t＜8.3ms） （3ms≦t＜8.3ms） （1ms≦t＜8.3ms）
：
・
TOR
（Recommended torque 0.5N m）
Electrical Characteristics
（
Tc=25
℃／
Unless otherwise specified
）
V
F
I
R
θ
jc
Pulse measurement, Per diode
V
R
=800V, Pulse measurement, Per diode
Junction to case, With heatsink
Junction to lead, Without heatsink
Junction to ambient, Without heatsink
Forward Voltage
Reverse Current
MAX. 1.10
（I
F
=5A）
MAX. 1.10
（I
F
=7.5A）
MAX. 1.10
（I
F
=15A）
V
μA
MAX. 10
MAX. 2.5
MAX. 1.5
MAX.
5
MAX. 0.8
Thermal Resistance
θ
jl
θ
ja
℃/W
MAX. 35
U10K80R
U15K80R
U30K80R
Type No.
US4KB80R
30
20
10
CHARACTERISTIC DIAGRAMS
Forward Voltage
10
Pulse measurement per diode
Forward Power Dissipation
200
Peak Surge Forward Current Capability
Forward Power Dissipation P
F
［W½
tp
Forward Current I
F
［A½
8
T
D=tp/T
［A½
Peak Surge Forward Current I
FSM
Io
I
FSM
8.3ms
Tc=150℃
［TYP½
5
Tc= 25℃
［TYP½
Tj=150℃
SIN
150
8.3ms
1cycle
non−repetitive
sine wave
Tj=25℃
6
2
1
0.5
100
4
50
2
0.2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
1
2
3
4
5
0
1
2
5
10
20
50
100
Forward Voltage V
F
［V½
Average Rectified Forward Current Io［A½
Number of Cycles
［cycle½
Derating Curve Ta-
I
o
Average Rectified Forward Current Io［A½
Sine wave
R-load
Free in air
on glass−epoxy substrate
Derating Curve Tc-
I
o
Average Rectified Forward Current Io［A½
7
6
5
4
3
2
1
0
0
Sine wave
R-load
With heatsink
Tc
heatsink
Tc−sensing point
Peak Surge Forward Current Capability
500
3
Peak Surge Forward Current I
FSM1
［A½
400
300
Tj=25℃
200
Tj=150℃
2.5
P.C.B
SIN
2
soldering land 3mm
φ
I
（tp）
FSM
tp
non−repetitive
sine wave
SIN
1.5
1
0.5
100
90
80
70
60
50
3
4
5
6
7
8.3
0
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Ambient Temperature Ta［℃½
Case Temperature Tc［℃½
Pulse Wide tp［ms½
US6KB80R
Forward Voltage
30
20
10
Pulse measurement per diode
Forward Power Dissipation
14
12
10
8
6
4
2
0
0
250
Peak Surge Forward Current Capability
tp
T
D=tp/T
［A½
Peak Surge Forward Current I
FSM
Forward Power Dissipation P
F
［W½
Io
Forward Current I
F
［A½
Tc=150℃
［TYP½
SIN
200
I
FSM
8.3ms
8.3ms
1cycle
non−repetitive
sine wave
Tj=25℃
5
Tc= 25℃
［TYP½
Tj=150℃
150
2
1
0.5
100
50
0.2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1
2
3
4
5
6
7
8
0
1
2
5
10
20
50
100
Forward Voltage V
F
［V½
Average Rectified Forward Current Io［A½
Number of Cycles
［cycle½
Derating Curve Ta-
I
o
3
Derating Curve Tc-
I
o
Average Rectified Forward Current Io［A½
10
Sine wave
R-load
With heatsink
Tc
heatsink
Tc−sensing point
Peak Surge Forward Current Capability
1000
Average Rectified Forward Current Io［A½
2.5
P.C.B
8
Peak Surge Forward Current I
FSM1
［A½
SIN
2
soldering land 3mm
φ
500
Tj=25℃
I
（tp）
FSM
tp
non−repetitive
sine wave
Sine wave
R-load
Free in air
on glass−epoxy substrate
6
SIN
1.5
200
4
Tj=150℃
1
0.5
2
100
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
50
1
2
3
4
5
6
7
8.3
Ambient Temperature Ta［℃½
Case Temperature Tc［℃½
Pulse Wide tp［ms½
US8KB80R
50
20
CHARACTERISTIC DIAGRAMS
Forward Voltage
20
Pulse measurement per diode
Forward Power Dissipation
300
Peak Surge Forward Current Capability
Forward Power Dissipation P
F
［W½
［A½
Peak Surge Forward Current I
FSM
Io
tp
T
D=tp/T
250
8.3ms
8.3ms
1cycle
non−repetitive
sine wave
Tj=25℃
Forward Current I
F
［A½
Tc=150℃
［TYP½
Tc= 25℃
［TYP½
15
Tj=150℃
SIN
200
5
2
1
10
150
100
5
50
0.2
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
2
4
6
8
10
0
1
2
5
10
I
FSM
20
50
100
Forward Voltage V
F
［V½
Average Rectified Forward Current Io［A½
Number of Cycles
［cycle½
Derating Curve Ta-
I
o
Average Rectified Forward Current Io［A½
Sine wave
R-load
Free in air
on glass−epoxy substrate
Derating Curve Tc-
I
o
Average Rectified Forward Current Io［A½
14
12
Sine wave
R-load
With heatsink
Tc
Peak Surge Forward Current Capability
1000
3
heatsink
Tc−sensing point
2.5
SIN
2
P.C.B
Peak Surge Forward Current I
FSM1
［A½
500
10
8
6
4
2
0
0
Tj=25℃
I
（tp）
FSM
tp
non−repetitive
sine wave
soldering land 3mm
φ
SIN
1.5
200
Tj=150℃
1
100
0.5
0
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
50
1
2
3
4
5
6
7
8.3
Ambient Temperature Ta［℃½
Case Temperature Tc［℃½
Pulse Wide tp［ms½
US10KB80R
Forward Voltage
50
30
Io
Forward Power Dissipation
200
Peak Surge Forward Current Capability
20
25
tp
T
D=tp/T
［A½
Peak Surge Forward Current I
FSM
Forward Power Dissipation P
F
［W½
I
FSM
8.3ms
Pulse measurement per diode
8.3ms
Forward Current I
F
［A½
10
Tc=150℃
［TYP½
5
2
1
0.5
0.2
0.1
0
Tc= 25℃
［TYP½
20
Tj=150℃
SIN
150
1cycle
non−repetitive
sine wave
Tj=25℃
15
100
10
50
5
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
0
0
2
4
6
8
10
12
0
1
2
5
10
20
50
100
Forward Voltage V
F
［V½
Average Rectified Forward Current Io［A½
Number of Cycles
［cycle½
Derating Curve Ta-
I
o
Average Rectified Forward Current Io［A½
Average Rectified Forward Current Io［A½
3
Sine wave
R-load
Free in air
on glass−epoxy substrate
Derating Curve Tc-
I
o
16
14
12
10
8
6
4
2
0
0
Sine wave
R-load
With heatsink
Tc
heatsink
Tc−sensing point
Peak Surge Forward Current Capability
500
Peak Surge Forward Current I
FSM1
［A½
400
300
Tj=25℃
200
Tj=150℃
2.5
P.C.B
I
（tp）
FSM
tp
non−repetitive
sine wave
SIN
2
soldering land 3mm
φ
SIN
1.5
1
0.5
100
90
80
70
60
50
3
4
5
6
7
8.3
0
0
20
40
60
80
100
120
140
160
20
40
60
80
100
120
140
160
Ambient Temperature Ta［℃½
Case Temperature Tc［℃½
Pulse Wide tp［ms½
US15KB80R
50
20
CHARACTERISTIC DIAGRAMS
Forward Voltage
40
Pulse measurement per diode
Forward Power Dissipation
250
Io
tp
T
D=tp/T
Peak Surge Forward Current Capability
Forward Power Dissipation P
F
［W½
35
30
Tj=150℃
Forward Current I
F
［A½
10
5
2
1
0.5
0.2
0.1
0
Tc=150℃
［TYP½
Tc= 25℃
［TYP½
SIN
［A½
Peak Surge Forward Current I
FSM
200
I
FSM
8.3ms
8.3ms
25
20
15
10
5
0
0
1cycle
non−repetitive
sine wave
Tj=25℃
150
100
50
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
5
10
15
20
0
1
2
5
10
20
50
100
Forward Voltage V
F
［V½
Average Rectified Forward Current Io［A½
Number of Cycles
［cycle½
Derating Curve Ta-
I
o
Average Rectified Forward Current Io［A½
Average Rectified Forward Current Io［A½
3
Sine wave
R-load
Free in air
Derating Curve Tc-
I
o
24
Sine wave
R-load
With heatsink
Tc
Tc
heatsink
Tc−sensing point
Peak Surge Forward Current Capability
1000
2.5
P.C.B
20
Peak Surge Forward Current I
FSM1
［A½
500
Tj=25℃
200
I
（tp）
FSM
tp
non−repetitive
sine wave
on glass−epoxy substrate
SIN
2
soldering land 3mm
φ
16
SIN
Tj=150℃
1.5
12
100
1
8
50
0.5
4
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
20
3
4
5
6
7
8.3
Ambient Temperature Ta［℃½
Case Temperature Tc［℃½
Pulse Wide tp［ms½
US30KB80R
Forward Voltage
100
80
Pulse measurement per diode
Tc=150℃
［TYP½
Tc= 25℃
［TYP½
Forward Power Dissipation
500
Peak Surge Forward Current Capability
［A½
Peak Surge Forward Current I
FSM
Forward Power Dissipation P
F
［W½
70
tp
T
D=tp/T
Io
Forward Current I
F
［A½
20
10
5
2
1
0.5
0.2
0.1
0
SIN
400
I
FSM
8.3ms
50
60
Tj=150℃
8.3ms
50
40
30
20
10
0
0
1cycle
non−repetitive
sine wave
Tj=25℃
300
200
100
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
5
10
15
20
25
30
35
40
0
1
2
5
10
20
50
100
Forward Voltage V
F
［V½
Average Rectified Forward Current Io［A½
Number of Cycles
［cycle½
Derating Curve Ta-
I
o
Average Rectified Forward Current Io［A½
Average Rectified Forward Current Io［A½
3
Sine wave
R-load
Free in air
on glass−epoxy substrate
Derating Curve Tc-
I
o
50
Sine wave
R-load
With heatsink
Tc
heatsink
Tc−sensing point
Peak Surge Forward Current Capability
2000
Peak Surge Forward Current I
FSM1
［A½
2.5
P.C.B
40
SIN
2
soldering land 3mm
φ
1000
Tj=25℃
I
（tp）
FSM
tp
non−repetitive
sine wave
30
SIN
1.5
500
Tj=150℃
20
1
0.5
10
200
0
0
20
40
60
80
100
120
140
160
0
0
20
40
60
80
100
120
140
160
100
1
2
3
4
5
6
7 8.3
Ambient Temperature Ta［℃½
Case Temperature Tc［℃½
Pulse Wide tp［ms½
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