Ordering number : ENA1523
SBT80-06JS
SANYO Semiconductors
DATA SHEET
SBT80-06JS
Applications
•
Schottky Barrier Diode (Twin Type
•
Cathode Common)
60V, 8A Rectifier
High frequency rectification (switching regulators, converters, choppers).
Features
•
•
•
•
•
•
Guaranteed up to Tj=150°C.
Low forward voltage (VF max=0.58V).
Short reverse recovery time.
Low switching noise.
High reliability due to highly reliable planar structure.
Attachment workability is good by Mica-less package.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Repetitive Peak Reverse Voltage
Nonrepetitive Peak Reverse Surge Voltage
Average Output Current
Surge Forward Current
Junction Temperature
Storage Temperature
Symbol
VRRM
VRSM
I
O
I
FSM
Tj
Tstg
50Hz resistive load, sine wave Tc=109°C
50Hz sine wave, 1 cycle
Conditions
Ratings
60
66
8
80
--55 to +150
--55 to +150
Unit
V
V
A
A
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Reverse Voltage
Forward Voltage
Reverse Current
Symbol
VR
VF
IR
Conditions
IR=1mA, Tj=25°C *
IF=3.0A, Tj=25°C *
VR=30V, Tj=25°C *
Ratings
min
60
0.58
0.1
typ
max
Unit
V
V
mA
Note)
*
: Value per element
Continued on next page.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not
be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for applications outside the standard
applications of our customer who is considering such use and/or outside the scope of our intended standard
applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the
intended use, our customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
www.semiconductor-sanyo.com/network
72209SD TK IM TC-00002023 No. A1523-1/3
SBT80-06JS
Continued from preceding page.
Parameter
Interterminal Capacitance
Thermal Resistance
C
Rth(j-c)
Symbol
Conditions
VR=10V, Tj=25°C *
Junction-Case : Smoothed DC
Ratings
min
typ
130
5.0
max
Unit
pF
°C / W
Note)
*
: Value per element
Package Dimensions
unit : mm (typ)
7525-001
Electrical Connection
1
4.5
2.8
3
10.0
3.5
3.2
7.2
1 : Anode
2 : Cathode
3 : Anode
2
16.0
3.6
1.6
1.2
14.0
0.75
1 2 3
0.7
1 : Anode
2 : Cathode
3 : Anode
SANYO : TO-220ML(LS)
2.55
2.55
2.4
2
10
7
IF -- VF
Represented by max
0
°
C
j=15
T
C
25
°
100
7
5
IR -- VR
ax
Cm
50
°
1
Tj=
typ
0
°
C
15
5
3
2
1.0
7
5
3
2
0.1
Reverse Current, IR -- mA
Forward Current, IF -- A
3
2
10
7
5
3
2
1.0
7
5
0
°
C
125
typ
°
C
100
typ
0
0.5
1.0
1.5
IT08385
10
20
30
40
50
60
70
IT08386
Forward Voltage, VF -- V
Average Forward Power Dissipation, PF(AV) -- W
10
Average Reverse Power Dissipation, PR(AV) -- W
PF(AV) -- IO
Reverse Voltage, VR -- V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
180°
0.5
0
0
360°
PR(AV) -- VRM
8
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
θ
360°
(4)
(2)
(3)
(1)Rectangular wave
θ
=300
°
(2)Rectangular wave
θ
=240
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
Rectangular
wave
VR
θ
360°
(1)
(2)
(3)
(1)
6
4
Sine
wave
VR
Sine
wave
2
180°
0
360°
0
1
2
3
4
5
6
7
8
9
10
(4)
PR max at Tj=150
°
C
10
20
30
40
50
60
70
IT08388
Average Output Current, IO -- A
IT08387
Peak Reverse Voltage, VRM -- V
No. A1523-2/3
SBT80-06JS
170
160
Tc -- IO
Interterminal Capacitance, C -- pF
Case Temperature, Tc --
°C
150
140
130
120
110
100
90
80
70
0
1
(1)Rectangular wave
θ
=60
°
(2)Rectangular wave
θ
=120
°
(3)Rectangular wave
θ
=180
°
(4)Sine wave
θ
=180
°
5
C -- VR
f=100kHz
3
2
Rectangular
wave
θ
360°
(4)
(1)
(2)
(3)
100
Sine
wave
180°
360°
2
3
4
5
6
7
8
9
10
7
5
1.0
2
3
5
7
10
2
3
5
Average Output Current, IO -- A
120
Surge Forward Current, IFSM(Peak) -- A
Current waveform 50Hz sine wave
Tj=150°C
100
Transient Thermal Resistance, Rth(j-c) --
°C
/ W
IFSM -- t
IT08389
10
7
5
Reverse Voltage, VR -- V
Rth(j-c) -- t
7 100
IT08495
I
S
20ms
t
80
3
2
60
40
1.0
7
5
3
0.001 2 3
20
0
7 0.01
2
3
5
7 0.1
2
3
5
7 1.0
2
3
5 70.01
2 3
5 7 0.1
2 3
5 7 1.0
2 3
Time, t -- s
ID01009
Time, t -- s
5 7 10
ID01010
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
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Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed
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This catalog provides information as of July, 2009. Specifications and information herein are subject
to change without notice.
PS No. A1523-3/3