PD-90882H
IRHF9130
JANSR2N7389
RADIATION HARDENED
POWER MOSFET
THRU-HOLE TO-205AF (TO-39)
Product Summary
Part Number Radiation Level
IRHF9130
IRHF93130
100 kRads(Si)
300 kRads(Si)
REF: MIL-PRF-19500/630
RAD Hard™HEXFET
®
TECHNOLOGY
100V, P-CHANNEL
R
DS(on)
0.30
0.30
I
D
-6.5A
-6.5A
QPL Part Number
JANSR2N7389
JANSF2N7389
TO-39
Description
IR HiRel RADHard™ HEXFET
®
MOSFET technology
provides high performance power MOSFETs for space
applications. This technology has long history of proven
performance and reliability in satellite applications. These
devices have been characterized for both Total Dose and
Single Event Effects (SEE). The combination of low RDS(on)
and low gate charge reduces the power losses in switching
applications such as DC to DC converters and motor control.
These devices retain all of the well established advantages of
MOSFETs such as voltage control, fast switching and
temperature stability of electrical parameters.
Features
Single Event Effect (SEE) Hardened
Low RDS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Hermetically Sealed
Ceramic Package
Light Weight
ESD Rating: Class 1B per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Symbol
I
D1
@ V
GS
= -12V, T
C
= 25°C
I
DM
@ T
C
= 25°C
P
D
@ T
C
= 25°C
V
GS
Pre-Irradiation
Parameter
Value
-6.5
-4.1
-26
25
0.2
± 20
W
W/°C
V
A
Units
Continuous Drain Current
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
I
D2
@ V
GS
= -12V, T
C
= 100°C Continuous Drain Current
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Lead Temperature
Weight
165
-6.5
2.5
-22
-55 to + 150
300 (0.063 in. /1.6 mm from case for 10s)
0.98 (Typical)
mJ
A
mJ
V/ns
°C
g
For Footnotes, refer to the page 2.
1
International Rectifier HiRel Products, Inc.
2019-12-10
IRHF9130
JANSR2N7389
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Symbol
BV
DSS
BV
DSS
/T
J
R
DS(on)
V
GS(th)
Gfs
I
DSS
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
-100 ––– –––
––– -0.112 –––
––– ––– 0.30
–––
-2.0
2.5
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
7.0
1200
290
76
0.35
-4.0
–––
-25
-250
-100
100
45
10
25
30
50
70
70
–––
–––
–––
–––
V
V/°C
V
S
µA
nA
nC
Test Conditions
V
GS
= 0V, I
D
= -1.0mA
Reference to 25°C, I
D
= -1.0mA
V
GS
= -12V, I
D2
= -4.1A
V
GS
= -12V, I
D1
= -6.5A
V
DS
= V
GS
, I
D
= -1.0mA
V
DS
= -15V, I
D2
= -4.1A
V
DS
= -80V, V
GS
= 0V
V
DS
= -80V,V
GS
= 0V,T
J
=125°C
V
GS
= -20V
V
GS
= 20V
I
D1
= -6.5A
V
DS
= -50V
V
GS
= -12V
V
DD
= -50V
I
D1
= -6.5A
R
G
= 7.5
V
GS
= -12V
Measured from Drain lead (6mm / 0.25 in
from package) to Source lead (6mm/ 0.25
in from package) with Source wire
internally bonded from Source pin to Drain
pin
Q
G
Q
GS
Q
GD
t
d(on)
tr
t
d(off)
t
f
Ls +L
D
C
iss
C
oss
C
rss
ns
nH
pF
V
GS
= 0V
V
DS
= -25V
ƒ = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Symbol
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current (Body Diode)
Pulsed Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
-6.5
-26
-3.0
250
0.74
A
V
ns
µC
Test Conditions
T
J
= 25°C,I
S
= -6.5A, V
GS
= 0V
T
J
= 25°C, I
F
= -6.5A,V
DD
≤ -50V
di/dt = -100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Thermal Resistance
Symbol
R
JC
R
JA
Parameter
Junction-to-Case
Junction-to-Ambient (Typical Socket Mount)
Min.
–––
–––
Typ.
–––
–––
Max.
5.0
175
Units
°C/W
Footnotes:
Repetitive Rating; Pulse width limited by maximum junction temperature.
V
DD
= -25V, starting T
J
= 25°C, L = 7.8mH, Peak I
L
= -6.5A, V
GS
= -12V
I
SD
-6.5A, di/dt
-430A/µs, V
DD
-100V, T
J
150°C
Pulse width
300 µs; Duty Cycle
2%
Total Dose Irradiation with V
GS
Bias. -12 volt V
GS
applied and V
DS
= 0 during irradiation per MIL-STD-750, Method 1019, condition A.
Total Dose Irradiation with V
DS
Bias. -80 volt V
DS
applied and V
GS
= 0 during irradiation per MlL-STD-750, Method 1019, condition A.
2
International Rectifier HiRel Products, Inc.
2019-12-10
IRHF9130
JANSR2N7389
Radiation Characteristics
Pre-Irradiation
IR HiRel Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance
program at IR HiRel is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose
(per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using
the same drive circuitry and test conditions in order to provide a direct comparison.
Table1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
Symbol
BV
DSS
V
GS(th)
I
GSS
Parameter
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
100 kRads (Si)
1
Min.
-100
-2.0
–––
Max.
–––
-4.0
-100
300 kRads (Si)
2
Min.
-100
-2.0
–––
Max.
–––
-5.0
-100
V
V
nA
V
GS
= 0V, I
D
= -1.0mA
V
DS
= V
GS
, I
D
= -1.0mA
V
GS
= -20V
Units
Test Conditions
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source
On-State Resistance (TO-3)
Static Drain-to-Source
On-State Resistance (TO-39)
Diode Forward Voltage
–––
–––
–––
–––
–––
100
-25
0.30
0.30
-3.0
–––
–––
–––
–––
–––
100
-25
0.30
0.30
-3.0
nA
µA
V
V
GS
= 20V
V
DS
= -80V, V
GS
= 0V
V
GS
= -12V, I
D2
= -4.1A
V
GS
= -12V, I
D2
= -4.1A
V
GS
= 0V, I
S
= -6.5A
1. Part numbers IRHF9130 (JANSR2N7389)
2. Part numbers IRHF91230 (JANSF2N7389)
IR HiRel radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects
(SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
VDS (V)
Ion
LET
(MeV/(mg/cm
2
))
28
38.8
63.4
Energy
(MeV)
285
320
348
Range
(µm)
43
39.6
32.5
@ VGS = @ VGS = @ VGS = @ VGS = @ VGS =
0V
5V
10V
15V
20V
-100
-100
-50
-100
-100
–––
-100
-75
–––
-70
-50
–––
-50
–––
–––
Cu
Kr
Xe
Fig a.
Typical Single Event Effect, Safe Operating Area
For Footnotes, refer to the page 2.
3
International Rectifier HiRel Products, Inc.
2019-12-10
IRHF9130
JANSR2N7389
Pre-Irradiation
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance Vs. Temperature
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
4
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
International Rectifier HiRel Products, Inc.
2019-12-10
IRHF9130
JANSR2N7389
Pre-Irradiation
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction -to-Case
5
International Rectifier HiRel Products, Inc.
2019-12-10
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
