PD- 9.1694A
PRELIMINARY
l
l
l
l
IRL3102
HEXFET
®
Power MOSFET
D
Advanced Process Technology
Optimized for 4.5V-7.0V Gate Drive
Ideal for CPU Core DC-DC Converters
Fast Switching
G
V
DSS
= 20V
R
DS(on)
= 0.013Ω
S
Description
These HEXFET Power MOSFETs were designed
specifically to meet the demands of CPU core DC-DC
converters in the PC environment. Advanced
processing techniques combined with an optimized
gate oxide design results in a die sized specifically to
offer maximum efficiency at minimum cost.
The TO-220 package is universally preferred for all
commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-
220 contribute to its wide acceptance throughout the
industry.
TO-220AB
I
D
= 61A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
V
GSM
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 4.5V
Continuous Drain Current, V
GS
@ 4.5V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage
(Start Up Transient, tp = 100µs)
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
61
39
240
89
0.71
± 10
14
220
35
8.9
5.0
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.4
–––
62
Units
°C/W
11/18/97
IRL3102
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
20
–––
–––
–––
0.70
36
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.016
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
10
130
80
110
Max. Units
Conditions
–––
V
V
GS
= 0V, I
D
= 250µA
––– V/°C Reference to 25°C, I
D
= 1mA
0.015
V
GS
= 4.5V, I
D
= 37A
Ω
0.013
V
GS
= 7.0V, I
D
= 37A
–––
V
V
DS
= V
GS
, I
D
= 250µA
–––
S
V
DS
= 16V, I
D
= 35A
25
V
DS
= 20V, V
GS
= 0V
µA
250
V
DS
= 10V, V
GS
= 0V, T
J
= 150°C
100
V
GS
= 10V
nA
-100
V
GS
= -10V
58
I
D
= 35A
14
nC
V
DS
= 16V
21
V
GS
= 4.5V, See Fig. 6
–––
V
DD
= 10V
–––
I
D
= 35A
ns
–––
R
G
= 9.0Ω, V
GS
= 4.5V
–––
R
D
= 0.28Ω,
Between lead,
4.5 –––
6mm (0.25in.)
nH
G
from package
7.5 –––
and center of die contact
2500 –––
V
GS
= 0V
1000 –––
pF
V
DS
= 15V
360 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
61
––– –––
showing the
A
G
integral reverse
––– ––– 240
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 37A, V
GS
= 0V
––– 59
88
ns
T
J
= 25°C, I
F
= 35A
––– 110 160
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
I
SD
≤
35A, di/dt
≤
100A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
150°C
Starting T
J
= 25°C, L = 0.36mH
R
G
= 25Ω, I
AS
= 35A.
Pulse width
≤
300µs; duty cycle
≤
2%.
IRL3102
1000
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
3.0V
4.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
TOP
TOP
1000
I
D
, Drain-to-Source Current (A)
100
I
D
, Drain-to-Source Current (A)
VGS
VGS
15V
10V
12V
8.0V
10V
6.0V
8.0V
4.0V
6.0V
4.0V
3.0V
3.0V
BOTTOM 2.5V
BOTTOM 2.5V
TOP
TOP
100
2.5V
20µs PULSE WIDTH
T
J
= 25
°
C
1
10
100
2.5V
20µs PULSE WIDTH
T
J
= 150
°
C
1
10
100
10
0.1
10
0.1
V
DS
, Drain-to-Source Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000
2.0
T
J
= 25
°
C
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 61A
I
D
, Drain-to-Source Current (A)
1.5
100
T
J
= 150
°
C
1.0
10
0.5
1
2
3
4
V DS = 15V
20µs PULSE WIDTH
5
6
7
0.0
-60 -40 -20
V
GS
= 4.5V
0
20
40
60
80 100 120 140 160
V
GS
, Gate-to-Source Voltage (V)
T
J
, Junction Temperature(
°
C)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
IRL3102
4200
3600
V
GS
, Gate-to-Source Voltage (V)
V
GS
=
C
iss
=
C
rss
=
C
oss
=
0V,
f = 1MHz
C
gs
+ C
gd ,
C
ds
SHORTED
C
gd
C
ds
+ C
gd
15
I
D
=
35A
V
DS
= 16V
12
C, Capacitance (pF)
3000
C
iss
2400
9
1800
C
oss
1200
6
600
C
rss
3
0
1
10
100
0
0
20
40
60
80
100
V
DS
, Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
I
SD
, Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY R
DS(on)
100
I
D
, Drain Current (A)
100
T
J
= 150
°
C
100us
1ms
10
T
J
= 25
°
C
10
10ms
1
0.2
V
GS
= 0 V
0.8
1.4
2.0
2.6
1
1
T
C
= 25 ° C
T
J
= 150 ° C
Single Pulse
10
100
V
SD
,Source-to-Drain Voltage (V)
V
DS
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
IRL3102
70
500
E
AS
, Single Pulse Avalanche Energy (mJ)
TOP
400
60
BOTTOM
ID
16A
22A
35A
I
D
, Drain Current (A)
50
40
300
30
200
20
100
10
0
25
50
75
100
125
150
0
25
50
75
100
125
150
T
C
, Case Temperature ( ° C)
Starting T , Junction Temperature(
°
C)
J
Fig 9.
Maximum Drain Current Vs.
Case Temperature
Fig 10.
Maximum Avalanche Energy
Vs. Drain Current
10
Thermal Response (Z
thJC
)
1
D = 0.50
0.20
0.10
P
DM
t
1
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.0001
0.001
0.01
0.1
1
t
2
0.1
0.05
0.02
0.01
0.01
0.00001
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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