CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT GLASS PASSIVATED
SUPER FAST SILICON RECTIFIER
VOLTAGE RANGE 50 - 1000 Volts CURRENT 1.0 Ampere
FEATURES
For surface mounted applications
Low profile package
Built-in strain relief
Superfast recovery times for high efficiency
Metallurgically bonded construction
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
* Glass passivated junction
* High temperature soldering guaranteed :
260
o
C/10 seconds at terminals
0.155 (3.94)
0.130 (3.30)
(1)
UBM11PT
THRU
UBM18PT
*
*
*
*
*
*
SMB
0.083 (2.11)
0.077 (1.96)
(2)
MECHANICAL DATA
Case:
JEDEC SMB molded plastic
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Indicated by cathode band
Weight:
0.003 ounces, 0.093 gram
0.190 (4.75)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60 H
Z
, resistive or inductive load.
For capacitive load, derate current by 20%.
o
0.220 (5.59)
0.205 (5.21)
Dimensions in inches and (millimeters)
SMB
AXIMUM RATINGES
( At T
A
= 25 C unless otherwise noted )
RATINGS
SYMBOL
V
RRM
V
RMS
V
DC
I
O
UBM11PT UBM12PT UBM13PT UBM14PT UBM15PT UBM16PT UBM17PT UBM18PT
o
UNITS
Volts
Volts
Volts
Amps
Maximum Recurrent Peak Reverse Voltage
50
35
50
100
70
100
200
140
200
300
210
300
1.0
400
280
400
600
420
600
800
560
800
1000
700
1000
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current T
L
= 120
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
30
Amps
superimposed on rated load (JEDEC method)
C
J
T
J
, T
STG
15
-65 to +150
10
pF
o
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
C
LECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
@ T
A
= 25
o
C
@ T
A
= 100 C
trr
35
o
SYMBOL
V
F
I
R
UBM11PT UBM12PT UBM13PT UBM14PT UBM15PT UBM16PT UBM17PT UBM18PT
UNITS
Volts
uAmps
uAmps
Maximum Instantaneous Forward Voltage at 1.0 A DC
0.95
5.0
50
1.27
1.75
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Maximum Reverse Recovery Time (Note 2)
45
nSec
2004-10
OTES : 1. Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 volts
2. Test Conditions : I
F
= 0.5 A, I
R
= -1.0 A, I
RR
= -0.25 A
RATING CHARACTERISTIC CURVES ( UBM11PT THRU UBM18PT )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
trr
+0.5A
(-)
0
PULSE
GENERATOR
(NOTE 2)
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
(+)
-1.0A
NOTES: 1. Rise Time = 7 ns max. Input Impedance =
1 megohm. 22 pF.
2. Rise Time = 10 ns max. Source Impedlance=
50 ohms.
1cm
SET TIME BASE FOR
10 nS/cm
-0.25A
AVERAGE FORWARD CURRENT, ( A )
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
1.0
(+)
25 Vdc
(approx)
(-)
D.U.T
0.5
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0
0
25 50 75 100 125 150 175
LEAD TEMPERATURE ( C )
O
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS FORWARD CURRENT, ( A )
INSTANTANEOUS REVERSE CURRENT, (uA)
10
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
M1
1PT
M1
5PT
UB
UB
T
J
=75
o
C
1.0
0.1
.1
T
J
=25 C
o
T
J
=25 C
.01
.01
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
.001
0
.2
.4
.6
.8
1.0
1.2 1.4
1.6
INSTANTANEOUS FORWARD VOLTAGE, ( V )
1.8
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, ( A )
35
JUNCTION CAPACITANCE, ( pF )
30
25
20
15
10
5
0
1
2
5
10
20
NUMBER OF CYCLES AT 60 Hz
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20
REVERSE VOLTAGE, ( V )
40
100
T
J
=25
o
C
UBM
11
PT~U
BM15
PT
UBM1
6PT~U
BM18P
T
UB
M1
o
6P
T~
10
1.0
UB
M1
T
J
=100 C
o
Pulse Width = 300uS
1% Duty Cycle
~U
BM
14P
T
8P
T
DSP 与 ARM 处理器
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