Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, 0.450 INCH, LEAD FREE, SOP-32
| 参数名称 | 属性值 |
| 是否Rohs认证 | 符合 |
| 零件包装代码 | SOIC |
| 包装说明 | SOP, SOP32,.56 |
| 针数 | 32 |
| Reach Compliance Code | compliant |
| ECCN代码 | 3A991.B.2.A |
| 最长访问时间 | 45 ns |
| I/O 类型 | COMMON |
| JESD-30 代码 | R-PDSO-G32 |
| 长度 | 20.495 mm |
| 内存密度 | 4194304 bit |
| 内存集成电路类型 | STANDARD SRAM |
| 内存宽度 | 8 |
| 功能数量 | 1 |
| 端子数量 | 32 |
| 字数 | 524288 words |
| 字数代码 | 512000 |
| 工作模式 | ASYNCHRONOUS |
| 最高工作温度 | 85 °C |
| 最低工作温度 | -40 °C |
| 组织 | 512KX8 |
| 输出特性 | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装代码 | SOP |
| 封装等效代码 | SOP32,.56 |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 并行/串行 | PARALLEL |
| 电源 | 2.5/3.3 V |
| 认证状态 | Not Qualified |
| 座面最大高度 | 3.12 mm |
| 最大待机电流 | 0.000007 A |
| 最小待机电流 | 1.2 V |
| 最大压摆率 | 0.02 mA |
| 最大供电电压 (Vsup) | 3.6 V |
| 最小供电电压 (Vsup) | 2.3 V |
| 标称供电电压 (Vsup) | 3 V |
| 表面贴装 | YES |
| 技术 | CMOS |
| 温度等级 | INDUSTRIAL |
| 端子形式 | GULL WING |
| 端子节距 | 1.27 mm |
| 端子位置 | DUAL |
| 宽度 | 11.305 mm |
| Base Number Matches | 1 |
| IS62WV5128DBLL-45QLI | IS62WV5128DBLL-45BI | IS62WV5128DALL-55T2LI | IS62WV5128DALL-55BLI | IS62WV5128DALL-55HLI | IS62WV5128DALL-55TLI | IS62WV5128DALL-55BI | |
|---|---|---|---|---|---|---|---|
| 描述 | Standard SRAM, 512KX8, 45ns, CMOS, PDSO32, 0.450 INCH, LEAD FREE, SOP-32 | Standard SRAM, 512KX8, 45ns, CMOS, PBGA36, 6 X 8 MM, MO-207, TFBGA-36 | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 0.400 INCH, LEAD FREE, TSOP2-32 | Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, LEAD FREE, MO-207, TFBGA-36 | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 8 X 13.40 MM, LEAD FREE, MO-183, STSOP1-32 | Standard SRAM, 512KX8, 55ns, CMOS, PDSO32, 8 X 20 MM, LEAD FREE, TSOP1-32 | Standard SRAM, 512KX8, 55ns, CMOS, PBGA36, 6 X 8 MM, MO-207, TFBGA-36 |
| 是否Rohs认证 | 符合 | 不符合 | 符合 | 符合 | 符合 | 符合 | 不符合 |
| 零件包装代码 | SOIC | DSBGA | TSOP2 | DSBGA | TSOP1 | TSOP1 | DSBGA |
| 包装说明 | SOP, SOP32,.56 | 6 X 8 MM, MO-207, TFBGA-36 | TSOP2, TSOP32,.46 | TFBGA, BGA36,6X8,30 | TSOP1, TSSOP32,.56,20 | TSOP1, TSSOP32,.8,20 | 6 X 8 MM, MO-207, TFBGA-36 |
| 针数 | 32 | 36 | 32 | 36 | 32 | 32 | 36 |
| Reach Compliance Code | compliant | compliant | compliant | compliant | compliant | compliant | compliant |
| ECCN代码 | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A | 3A991.B.2.A |
| 最长访问时间 | 45 ns | 45 ns | 55 ns | 55 ns | 55 ns | 55 ns | 55 ns |
| I/O 类型 | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON | COMMON |
| JESD-30 代码 | R-PDSO-G32 | R-PBGA-B36 | R-PDSO-G32 | R-PBGA-B36 | R-PDSO-G32 | R-PDSO-G32 | R-PBGA-B36 |
| 长度 | 20.495 mm | 8 mm | 20.95 mm | 8 mm | 11.8 mm | 20 mm | 8 mm |
| 内存密度 | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit | 4194304 bit |
| 内存集成电路类型 | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM | STANDARD SRAM |
| 内存宽度 | 8 | 8 | 8 | 8 | 8 | 8 | 8 |
| 功能数量 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 端子数量 | 32 | 36 | 32 | 36 | 32 | 32 | 36 |
| 字数 | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words | 524288 words |
| 字数代码 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 | 512000 |
| 工作模式 | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS | ASYNCHRONOUS |
| 最高工作温度 | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
| 最低工作温度 | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
| 组织 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 | 512KX8 |
| 输出特性 | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE | 3-STATE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装代码 | SOP | TFBGA | TSOP2 | TFBGA | TSOP1 | TSOP1 | TFBGA |
| 封装等效代码 | SOP32,.56 | BGA36,6X8,30 | TSOP32,.46 | BGA36,6X8,30 | TSSOP32,.56,20 | TSSOP32,.8,20 | BGA36,6X8,30 |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH | SMALL OUTLINE, THIN PROFILE | SMALL OUTLINE, THIN PROFILE | GRID ARRAY, THIN PROFILE, FINE PITCH |
| 并行/串行 | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL | PARALLEL |
| 电源 | 2.5/3.3 V | 2.5/3.3 V | 1.8/2 V | 1.8/2 V | 1.8/2 V | 1.8/2 V | 1.8/2 V |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| 座面最大高度 | 3.12 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm | 1.2 mm |
| 最大待机电流 | 0.000007 A | 0.000007 A | 0.000007 A | 0.000007 A | 0.000007 A | 0.000007 A | 0.000007 A |
| 最小待机电流 | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V | 1.2 V |
| 最大压摆率 | 0.02 mA | 0.02 mA | 0.02 mA | 0.02 mA | 0.02 mA | 0.02 mA | 0.02 mA |
| 最大供电电压 (Vsup) | 3.6 V | 3.6 V | 2.2 V | 2.2 V | 2.2 V | 2.2 V | 2.2 V |
| 最小供电电压 (Vsup) | 2.3 V | 2.3 V | 1.65 V | 1.65 V | 1.65 V | 1.65 V | 1.65 V |
| 标称供电电压 (Vsup) | 3 V | 3 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V | 1.8 V |
| 表面贴装 | YES | YES | YES | YES | YES | YES | YES |
| 技术 | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS | CMOS |
| 温度等级 | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL | INDUSTRIAL |
| 端子形式 | GULL WING | BALL | GULL WING | BALL | GULL WING | GULL WING | BALL |
| 端子节距 | 1.27 mm | 0.75 mm | 1.27 mm | 0.75 mm | 0.5 mm | 0.5 mm | 0.75 mm |
| 端子位置 | DUAL | BOTTOM | DUAL | BOTTOM | DUAL | DUAL | BOTTOM |
| 宽度 | 11.305 mm | 6 mm | 10.16 mm | 6 mm | 8 mm | 8 mm | 6 mm |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| 厂商名称 | - | - | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) | Integrated Silicon Solution ( ISSI ) |
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