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IS63LV1024-15H

产品描述Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
产品类别存储    存储   
文件大小50KB,共8页
制造商Integrated Silicon Solution ( ISSI )
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IS63LV1024-15H概述

Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32

IS63LV1024-15H规格参数

参数名称属性值
是否无铅含铅
是否Rohs认证不符合
零件包装代码TSOP1
包装说明8 X 13.40 MM, STSOP1-32
针数32
Reach Compliance Codecompliant
ECCN代码3A991.B.2.B
最长访问时间15 ns
JESD-30 代码R-PDSO-G32
JESD-609代码e0
长度11.8 mm
内存密度1048576 bit
内存集成电路类型STANDARD SRAM
内存宽度8
湿度敏感等级3
功能数量1
端子数量32
字数131072 words
字数代码128000
工作模式ASYNCHRONOUS
最高工作温度70 °C
最低工作温度
组织128KX8
封装主体材料PLASTIC/EPOXY
封装代码TSOP1
封装形状RECTANGULAR
封装形式SMALL OUTLINE, THIN PROFILE
并行/串行PARALLEL
峰值回流温度(摄氏度)NOT SPECIFIED
认证状态Not Qualified
座面最大高度1.2 mm
最大供电电压 (Vsup)3.6 V
最小供电电压 (Vsup)3 V
标称供电电压 (Vsup)3.3 V
表面贴装YES
技术CMOS
温度等级COMMERCIAL
端子面层Tin/Lead (Sn/Pb)
端子形式GULL WING
端子节距0.5 mm
端子位置DUAL
处于峰值回流温度下的最长时间NOT SPECIFIED
宽度8 mm
Base Number Matches1

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IS63LV1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
3.3V REVOLUTIONARY PINOUT
FEATURES
• High-speed access times:
10, 12 and 15 ns
• High-performance, low-power CMOS process
• Multiple center power and ground pins for
greater noise immunity
• Easy memory expansion with
CE
and
OE
options
CE
power-down
• Fully static operation: no clock or refresh
required
• TTL compatible inputs and outputs
• Single 3.3V power supply
• Packages available:
– 32-pin 300-mil SOJ
– 32-pin 400-mil SOJ
– 32-pin TSOP (Type II)
– 32-pin sTSOP (Type I, 8x13.4)
ISSI
JULY 1999
®
DESCRIPTION
The
ISSI
IS63LV1024 is a very high-speed, low power,
131,072-word by 8-bit CMOS static RAM in revolutionary
pinout. The IS63LV1024 is fabricated using
ISSI
's high-
performance CMOS technology. This highly reliable pro-
cess coupled with innovative circuit design techniques,
yields higher performance and low power consumption
devices.
When
CE
is HIGH (deselected), the device assumes a
standby mode at which the power dissipation can be
reduced down to 250
µW
(typical) with CMOS input levels.
The IS63LV1024 operates from a single 3.3V power
supply and all inputs are TTL-compatible.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8
MEMORY ARRAY
VCC
GND
I/O
DATA
CIRCUIT
I/O0-I/O7
COLUMN I/O
CE
OE
WE
CONTROL
CIRCUIT
This document contains PRELIMINARY information. ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible
product. We assume no responsibility for any errors which may appear in this publication. © Copyright 1999, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc.
SR010-1F
07/23/99
1

IS63LV1024-15H相似产品对比

IS63LV1024-15H IS63LV1024-12H IS63LV1024-12HI IS63LV1024-15HI IS63LV1024-10H
描述 Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 Standard SRAM, 128KX8, 12ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 Standard SRAM, 128KX8, 15ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32 Standard SRAM, 128KX8, 10ns, CMOS, PDSO32, 8 X 13.40 MM, STSOP1-32
是否无铅 含铅 含铅 含铅 含铅 含铅
是否Rohs认证 不符合 不符合 不符合 不符合 不符合
零件包装代码 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1
包装说明 8 X 13.40 MM, STSOP1-32 8 X 13.40 MM, STSOP1-32 8 X 13.40 MM, STSOP1-32 8 X 13.40 MM, STSOP1-32 8 X 13.40 MM, STSOP1-32
针数 32 32 32 32 32
Reach Compliance Code compliant compliant compliant compliant compliant
ECCN代码 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B 3A991.B.2.B
最长访问时间 15 ns 12 ns 12 ns 15 ns 10 ns
JESD-30 代码 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32 R-PDSO-G32
JESD-609代码 e0 e0 e0 e0 e0
长度 11.8 mm 11.8 mm 11.8 mm 11.8 mm 11.8 mm
内存密度 1048576 bit 1048576 bit 1048576 bit 1048576 bit 1048576 bit
内存集成电路类型 STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
内存宽度 8 8 8 8 8
湿度敏感等级 3 3 3 3 3
功能数量 1 1 1 1 1
端子数量 32 32 32 32 32
字数 131072 words 131072 words 131072 words 131072 words 131072 words
字数代码 128000 128000 128000 128000 128000
工作模式 ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
最高工作温度 70 °C 70 °C 85 °C 85 °C 70 °C
组织 128KX8 128KX8 128KX8 128KX8 128KX8
封装主体材料 PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
封装代码 TSOP1 TSOP1 TSOP1 TSOP1 TSOP1
封装形状 RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
封装形式 SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE SMALL OUTLINE, THIN PROFILE
并行/串行 PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
峰值回流温度(摄氏度) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
认证状态 Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
座面最大高度 1.2 mm 1.2 mm 1.2 mm 1.2 mm 1.2 mm
最大供电电压 (Vsup) 3.6 V 3.6 V 3.45 V 3.45 V 3.6 V
最小供电电压 (Vsup) 3 V 3 V 3.15 V 3.15 V 3 V
标称供电电压 (Vsup) 3.3 V 3.3 V 3.3 V 3.3 V 3.3 V
表面贴装 YES YES YES YES YES
技术 CMOS CMOS CMOS CMOS CMOS
温度等级 COMMERCIAL COMMERCIAL INDUSTRIAL INDUSTRIAL COMMERCIAL
端子面层 Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
端子形式 GULL WING GULL WING GULL WING GULL WING GULL WING
端子节距 0.5 mm 0.5 mm 0.5 mm 0.5 mm 0.5 mm
端子位置 DUAL DUAL DUAL DUAL DUAL
处于峰值回流温度下的最长时间 NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
宽度 8 mm 8 mm 8 mm 8 mm 8 mm
Base Number Matches 1 1 1 1 -
厂商名称 - Integrated Silicon Solution ( ISSI ) Integrated Silicon Solution ( ISSI ) - Integrated Silicon Solution ( ISSI )

 
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