IS32WV10008ALL
IS32WV10008BLL
1Meg x 8 LOW VOLTAGE,
ULTRA LOW POWER PSEUDO RAM
FEATURES
• High-speed access time: 55ns, 70, 85, 100ns
• CMOS low power operation
• TTL compatible interface levels
• Single power supply
– 1.65V--2.2V V
DD
(32WV10008ALL)
– 2.3V--3.6V V
DD
(32WV10008BLL)
• Fully static operation: no clock or refresh
required
• Three state outputs
• Industrial temperature available
ISSI
DESCRIPTION
®
ADVANCED INFORMATION
AUGUST 2002
The
ISSI
IS32WV10008ALL/ IS32WV10008BLL are high-
speed, 8M bit static RAMs organized as 1M words by 8 bits.
It is fabricated using
ISSI
's high-performance CMOS
technology. This highly reliable process coupled with
innovative circuit design techniques, yields high-
performance and low power consumption devices.
When
CS1
is HIGH (deselected) or when CS2 is LOW
(deselected) or when
CS1
is LOW, CS2 is HIGH, the device
assumes a standby mode at which the power dissipation
can be reduced down with CMOS input levels.
Easy memory expansion is provided by using Chip Enable
and Output Enable inputs. The active LOW Write Enable
(WE)
controls both writing and reading of the memory.
The IS32WV10008ALL and IS32WV10008BLL are packged
in the JEDEC standard 48-pin mini BGA (6mm x 8mm) and
44-Pin TSOP (TYPE II).
FUNCTIONAL BLOCK DIAGRAM
A0-A19
DECODER
1M x 8
MEMORY ARRAY
VDD
GND
I/O
DATA
CIRCUIT
DQ0-DQ7
COLUMN I/O
CS2
CS1
OE
WE
CONTROL
CIRCUIT
Copyright © 2002 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
08/15/02
1
IS32WV10008ALL,
IS32WV10008BLL
ISSI
IS32WV10008BLL
2.3V - 3.6V
2.3V - 3.6V
®
OPERATING RANGE (V
DD
)
Range
Commercial
Industrial
Ambient Temperature
0°C to +70°C
–40°C to +85°C
IS32WV10008ALL
1.65V - 2.2V
1.65V - 2.2V
ABSOLUTE MAXIMUM RATINGS
(1)
Symbol
V
TERM
T
BIAS
V
DD
T
STG
P
T
Parameter
Terminal Voltage with Respect to GND
Temperature Under Bias
V
DD
Related to GND
Storage Temperature
Power Dissipation
Value
–0.2 to V
DD
+0.3
–40 to +85
–0.2 to +3.8
–65 to +150
1.0
Unit
V
°C
V
°C
W
Note:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device at these or any other conditions above those indicated in the
operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods
may affect reliability.
DC ELECTRICAL CHARACTERISTICS
(Over Operating Range)
Symbol
V
OH
V
OL
V
IH
V
IL(1)
I
LI
I
LO
Parameter
Output HIGH Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Leakage
Output Leakage
GND
≤
V
IN
≤
V
DD
GND
≤
V
OUT
≤
V
DD
, Outputs Disabled
Test Conditions
I
OH
= -0.1 mA
I
OH
= -1 mA
I
OL
= 0.1 mA
I
OL
= 2.1 mA
V
DD
1.65-2.2V
2.3-3.6V
1.65-2.2V
2.3-3.6V
1.65-2.2V
2.3-3.6V
1.65-2.2V
2.3-3.6V
Min.
1.4
2.2
—
—
1.4
2.2
–0.2
–0.2
–1
–1
Max.
—
—
0.2
0.4
V
DD
+ 0.2
V
DD
+ 0.3
0.4
0.6
1
1
Unit
V
V
V
V
V
V
V
V
µA
µA
Notes:
1. V
IL
(min.) = –1.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
08/15/02
3
IS32WV10008ALL,
IS32WV10008BLL
ISSI
®
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
32WV10008ALL
Symbol Parameter
I
CC
I
CC
1
I
SB
1
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
DD
= Max.,
Com.
I
OUT
= 0 mA, f = f
MAX
Ind.
V
DD
= Max.,
Com.
I
OUT
= 0 mA, f = 0
Ind.
V
DD
= Max.,
Com.
V
IN
= V
IH
or V
IL
Ind.
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
Max.
70
15
15
3
3
0.3
0.3
Max.
85
10
10
3
3
0.3
0.3
Max.
100
10
10
3
3
0.3
0.3
Unit
mA
mA
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
40
40
40
40
40
40
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
POWER SUPPLY CHARACTERISTICS
(1)
(Over Operating Range)
32WV10008BLL
Symbol Parameter
I
CC
I
CC
1
I
SB
1
V
DD
Dynamic Operating
Supply Current
Operating Supply
Current
TTL Standby Current
(TTL Inputs)
Test Conditions
V
DD
= Max.,
Com.
I
OUT
= 0 mA, f = f
MAX
Ind.
V
DD
= Max.,
Com.
I
OUT
= 0 mA, f = 0
Ind.
V
DD
= Max.,
Com.
V
IN
= V
IH
or V
IL
Ind.
CS1
= V
IH
, CS2 = V
IL
,
f = 1 MH
Z
V
DD
= Max.,
CS1
≥
V
DD
– 0.2V,
CS2
≤
0.2V,
V
IN
≥
V
DD
– 0.2V, or
V
IN
≤
0.2V, f = 0
Com.
Ind.
Max.
55
15
15
3
3
0.3
0.3
Max.
70
15
15
3
3
0.3
0.3
Max.
85
10
10
3
3
0.3
0.3
Unit
mA
mA
mA
I
SB
2
CMOS Standby
Current (CMOS Inputs)
40
40
40
40
40
40
µA
Note:
1. At f = f
MAX
, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
Integrated Silicon Solution, Inc. — www.issi.com —
1-800-379-4774
Rev. 00A
08/15/02
5
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