IAA110P
Integrated Telecom Circuits
I
NTEGRATED
C
IRCUITS
D
IVISION
Parameter
Blocking Voltage
Load Current
On-Resistance (max)
Rating
350
100
35
Units
V
P
mA
rms
/ mA
DC
Features
•
•
•
•
•
•
•
•
3750V
rms
Input/Output Isolation
Three Functions in One Package
Bidirectional Current Sensing
Bidirectional Current Switching
FCC Compatible
No EMI/RFI Generation
Small 16-Pin SOIC Package
Tape & Reel Version Available
Description
The IAA110P Multifunction Telecom switch combines
two 350V normally open (1-Form-A) relays and one
optocoupler in a single package. The relays use
optically coupled MOSFET technology to provide
3750V
rms
of input to output isolation. The efficient
MOSFET switches and photovoltaic die use IXYS
Integrated Circuits Division’s patented OptoMOS
architecture while the inputs' highly efficient infrared
LEDs control the outputs. The IAA110P allows
telecom circuit designers to combine three discrete
functions in a single component that occupies less
space than traditional discrete component solutions.
Approvals
•
UL Recognized Component: File E76270
•
CSA Certified Component: Certificate 1305490
•
EN62368-1 Certified Component:
TUV Certificate: B 082667 0008 Rev 00
Ordering Information
Part #
IAA110P
IAA110PTR
Description
16-Pin SOIC (50/Tube)
16-Pin SOIC (1000/Reel)
Applications
•
Telecommunications
•
Telecom Switching
•
Tip/Ring Circuits
•
Modem Switching (Laptop, Notebook, Pocket Size)
•
Hook Switch
•
Dial Pulsing
•
Ground Start
•
Ringing Injection
•
Instrumentation
•
Multiplexers
•
Data Acquisition
•
Electronic Switching
•
I/O Subsystems
•
Meters (Watt-Hour, Water, Gas)
•
Medical Equipment-Patient/Equipment Isolation
•
Security
•
Industrial Controls
Pin Configuration
(N/C)
1
2
3
4
5
6
7
(N/C)
8
16
15
(Form A)
14
13
12
(Form A)
11
10
9
1. (N/C)
2. + LED - Form A Relay #1
3. – LED - Form A Relay #1
4. + LED - Form A Relay #2
5. – LED - Form A Relay #2
6. Emitter - Phototransistor
7. Collector - Phototransistor
8. (N/C)
9. LED - Phototransistor +/–
10. LED - Phototransistor –/+
11. Output - Form A Relay #2
12. Common Source Relay #2
13. Output - Form A Relay #2
14. Output - Form A Relay #1
15. Common Source Relay #1
16. Output - Form A Relay #1
Switching Characteristics
of Normally Open Devices
Form-A
I
F
90%
I
LOAD
t
on
10%
t
off
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NTEGRATED
C
IRCUITS
D
IVISION
Absolute Maximum Ratings @ 25ºC
Parameter
Input Control Current, Relay
Total Package Dissipation
1
Isolation Voltage, Input to Output
Operational Temperature
Storage Temperature
1
IAA110P
Symbol Ratings
I
F
50
P
T
1
V
ISO
3750
T
A
-40 to +85
T
STG
-40 to +125
Units
mA
W
V
rms
°C
°C
Absolute Maximum Ratings are stress ratings. Stresses in
excess of these ratings can cause permanent damage to
the device. Functional operation of the device at conditions
beyond those indicated in the operational sections of this
data sheet is not implied.
Typical values are characteristic of the device at +25°C,
and are the result of engineering evaluations. They are
provided for information purposes only, and are not part of
the manufacturing testing requirements.
Derate linearly 1.67 mW / ºC
Electrical Characteristics @25ºC: Relay Section
Parameter
Output Characteristics
Blocking Voltage (Peak)
Load Current
Continuous
Peak
On-Resistance
Off-State Leakage Current
Switching Speeds
Turn-On
Turn-Off
Output Capacitance
Input Characteristics
Input Control Current to Activate
Input Control Current to Deactivate
Input Voltage Drop
Reverse Input Voltage
Reverse Input Current
Conditions
I
L
=1A
-
t=10ms
I
L
=100mA
V
L
=350V, T
J
=25ºC
Symbol
V
L
I
L
I
LPK
R
ON
I
LEAK
t
on
t
off
C
OUT
I
F
I
F
V
F
V
R
I
R
Min
-
-
-
-
-
-
-
-
-
0.4
0.9
-
-
Typ
-
-
-
-
-
-
-
25
-
-
1.2
-
-
Max
350
100
350
35
1
3
3
-
5
-
1.4
5
10
Units
V
P
mA
rms
/ mA
DC
mA
P
A
ms
ms
pF
mA
mA
V
V
A
I
F
=5mA, V
L
=10V
V
L
=50V, f=1MHz
I
L
=100mA
I
L
=1mA
I
F
=5mA
-
V
R
=5V
Electrical Characteristics @25ºC: Detector Section
Parameter
Output Characteristics
Phototransistor Blocking Voltage
Phototransistor Dark Current
Saturation Voltage
Current Transfer Ratio
Input Characteristics
Input Control Current
Input Voltage Drop
Input Current (Detector Must be Off)
Capacitance, Input to Output
Isolation, Input to Output
Conditions
I
C
=10A
V
CE
=5V, I
F
=0mA
I
C
=2mA, I
F
=16mA
I
F
=6mA, V
CE
=0.5V
I
C
=2mA, V
CE
=0.5V
I
F
=5mA
I
C
=1A, V
CE
=5V
V
L
=50V, f=1MHz
-
Symbol
BV
CEO
I
CEO
V
SAT
CTR
I
F
V
F
-
C
I/O
V
I/O
Min
20
-
-
33
-
0.9
5
-
3750
Typ
50
50
0.3
-
2
1.2
25
3
-
Max
-
500
0.5
-
6
1.4
-
-
-
Units
V
nA
V
%
mA
V
A
pF
V
rms
2
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COMMON PERFORMANCE DATA*
Typical LED Forward Voltage Drop
(N=50, I
F
=5mA, T
A
=25ºC)
30
Device Count (N)
25
20
15
10
5
0
1.17
1.19
1.21
1.23
1.25
LED Forward Voltage Drop (V)
LED Forward Voltage Drop (V)
35
IAA110P
Typical LED Forward Voltage Drop
vs. Temperature
1.8
1.6
1.4
1.2
1.0
0.8
-40
-20
0
20
40
60
80
Temperature (ºC)
100
120
I
F
=50mA
I
F
=30mA
I
F
=20mA
I
F
=10mA
I
F
=5mA
RELAY PERFORMANCE DATA*
Typical Turn-On Time
(N=50, I
F
=5mA, I
L
=100mA
DC
, T
A
=25ºC)
Typical Turn-Off Time
(N=50, I
F
=5mA, I
L
=100mA
DC
, T
A
=25ºC)
Typical On-Resistance Distribution
(N=50, I
F
=5mA, I
L
=100mA
DC
, T
A
=25ºC)
35
30
Device Count (N)
25
20
15
10
5
0
0.05
0.15
0.25 0.35 0.45 0.55
Turn-Off Time (ms)
0.65
18.75 19.85 20.95 22.05 23.15 24.25 25.35
On-Resistance ( )
25
20
15
10
5
0
25
20
15
10
5
0
Device Count (N)
0.3
0.9
1.5
2.1
2.7
Turn-On Time (ms)
3.3
3.9
Device Count (N)
25
20
15
10
5
0
Typical I
F
for Switch Operation
(N=50, I
L
=100mA
DC
, T
A
=25ºC)
25
20
15
10
5
0
Typical I
F
for Switch Dropout
(N=50, I
L
=100mA
DC
, T
A
=25ºC)
Typical Blocking Voltage Distribution
(N=50, T
A
=25ºC)
35
30
Device Count (N)
25
20
15
10
5
0
Device Count (N)
0.39
0.65
0.91 1.17 1.43 1.69
LED Current (mA)
1.95
Device Count (N)
0.39
0.65
0.91 1.17 1.43 1.69
LED Current (mA)
1.95
377.5 388.5 399.5 410.5 421.5 432.5 443.5
Blocking Voltage (V
P
)
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
5
Typical Turn-On Time
vs. LED Forward Current
(I
L
=100mA
DC
)
0.7
0.6
Turn-Off Time (ms)
0.5
0.4
0.3
0.2
0.1
0
Typical Turn-Off Time
vs. LED Forward Current
(I
L
=100mA
DC
)
60
On-Resistance ( )
50
40
30
20
10
0
Typical On-Resistance
vs. Temperature
(I
F
=5mA, I
L
=100mA
DC
)
Turn-On Time (ms)
10 15 20 25 30 35 40
LED Forward Current (mA)
45
50
0
5
10 15 20 25 30 35 40
LED Forward Current (mA)
45
50
-40
-20
0
20
40
60
Temperature (ºC)
80
100
* Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC.
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RELAY PERFORMANCE DATA (cont.)*
Typical Turn-On Time
vs. Temperature
(I
L
=100mA
DC
)
Typical Turn-Off Time
vs. Temperature
(I
F
=5mA, I
L
=100mA
DC
)
IAA110P
Maximum Load Current
vs. Temperature
180
160
Load Current (mA)
140
120
100
80
60
40
20
0
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
-40
I
F
=5mA
I
F
=10mA
I
F
=20mA
-20
0
20
40
60
Temperature (ºC)
80
100
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
-40
Turn-On Time (ms)
Turn-Off Time (ms)
I
F
=20mA
I
F
=10mA
I
F
=5mA
-20
0
20
40
60
Temperature (ºC)
80
100
-40
-20
0
20
40
60
80
Temperature (ºC)
100
120
3.0
2.5
LED Current (mA)
Typical I
F
for Switch Operation
vs. Temperature
(I
L
=100mA
DC
)
3.0
2.5
LED Current (mA)
2.0
1.5
1.0
0.5
0
Typical I
F
for Switch Dropout
vs. Temperature
(I
L
=100mA
DC
)
Typical Load Current
vs. Load Voltage
(I
F
=5mA, T
A
=25ºC)
100
80
60
40
20
0
-20
-40
-60
-80
-100
-2.5 -2 -1.5 -1 -0.5 0 0.5 1
Load Voltage (V)
2.0
1.5
1.0
0.5
0
-40
-20
0
20
40
60
Temperature (ºC)
80
100
-40
-20
0
20
40
60
Temperature (ºC)
80
100
Load Current (mA)
1.5
2
2.5
Typical Blocking Voltage
vs. Temperature
430
Blocking Voltage (V
P
)
425
Leakage ( A)
420
415
410
405
400
395
-40
-20
0
20
40
60
Temperature (ºC)
80
100
Typical Leakage vs. Temperature
Measured Across Pins 14&16 or 11&13
0.016
0.014
0.012
0.010
0.008
0.006
0.004
0.002
0
-40
-20
0
20
40
60
Temperature (ºC)
80
100
Load Current (A)
Energy Rating Curve
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
10 s 100 s 1ms 10ms 100ms
Time
1s
10s
100s
DETECTOR PERFORMANCE DATA*
Typical Normalized CTR
vs. Forward Current
(V
CE
=0.5V)
4.5
4.0
Normalized CTR (%)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
2
4
6
8 10 12 14 16
Forward Current (mA)
18
20
Normalized CTR (%)
8
Collector Current (mA)
7
6
5
4
3
2
1
0
-40
-20
0
20
40
60
80
Temperature (ºC)
Typical Normalized CTR
vs. Temperature
(V
CE
=0.5V)
12
10
8
6
4
2
0
0
2
Typical Collector Current
vs. Forward Current
(V
CE
=0.5V)
I
F
=1mA
I
F
=2mA
I
F
=5mA
I
F
=10mA
I
F
=15mA
I
F
=20mA
100
120
4
6
8 10 12 14 16
Forward Current (mA)
18
20
* Unless otherwise noted, data presented in these graphs is typical of device operation at 25ºC.
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Manufacturing Information
Moisture Sensitivity
IAA110P
All plastic encapsulated semiconductor packages are susceptible to moisture ingression. IXYS Integrated
Circuits classifies its plastic encapsulated devices for moisture sensitivity according to the latest version of
the joint industry standard,
IPC/JEDEC J-STD-020,
in force at the time of product evaluation. We test all of
our products to the maximum conditions set forth in the standard, and guarantee proper operation of our
devices when handled according to the limitations and information in that standard as well as to any limitations set
forth in the information or standards referenced below.
Failure to adhere to the warnings or limitations as established by the listed specifications could result in reduced
product performance, reduction of operable life, and/or reduction of overall reliability.
This product carries a
Moisture Sensitivity Level (MSL)
classification as shown below, and should be handled
according to the requirements of the latest version of the joint industry standard
IPC/JEDEC J-STD-033.
Device
IAA110P
Moisture Sensitivity Level (MSL) Classification
MSL 3
ESD Sensitivity
This product is ESD Sensitive, and should be handled according to the industry standard
JESD-625.
Soldering Profile
Provided in the table below is the
IPC/JEDEC J-STD-020
Classification Temperature (T
C
) and the maximum
dwell time the body temperature of these surface mount devices may be (T
C
- 5)°C or greater. The Classification
Temperature sets the Maximum Body Temperature allowed for these devices during reflow soldering processes.
Device
IAA110P
Classification Temperature (T
c
)
245ºC
Dwell Time (t
P
)
30 seconds
Max Reflow Cycles
3
Board Wash
IXYS Integrated Circuits recommends the use of no-clean flux formulations. Board washing to reduce or remove flux
residue following the solder reflow process is acceptable provided proper precautions are taken to prevent damage
to the device. These precautions include but are not limited to: using a low pressure wash and providing a follow
up bake cycle sufficient to remove any moisture trapped within the device due to the washing process. Due to the
variability of the wash parameters used to clean the board, determination of the bake temperature and duration
necessary to remove the moisture trapped within the package is the responsibility of the user (assembler). Cleaning
or drying methods that employ ultrasonic energy may damage the device and should not be used. Additionally, the
device must not be exposed to halide flux or solvents.
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