CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SCHOTTKY BARRIER RECTIFIER
VOLTAGE RANGE 60 Volts CURRENT 1.0 Ampere
SMD16APT
FEATURES
For surface mounted applications
Metal silicon junction, majority carrier conduction
Low power loss, high efficiency
High current capability, low forward voltage drop
High surge capability
For use in low voltage high frequency inverters, free
wheeling, and polarity protection applications
* Lead free devices
0.5~1.0
*
*
*
*
*
*
SOD-123S
1.4~1.95
MARKING
* 16
2.55~3.0
0.8~1.35
0.25(max)
0.25(min)
CIRCUIT
(2)
3.5~3.95
(1)
Dimensions in millimeters
SOD-123S
MAXIMUM RATINGES
( At T
A
= 25
o
C unless otherwise noted )
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance (Note 1)
Operating Temperature Range
Storage Temperature Range
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
JL
SMD16APT
60
42
60
1.0
40
110
60
-65 to +150
-65 to +150
UNITS
Volts
Volts
Volts
Amps
Amps
pF
o
C/W
o
o
T
J
T
STG
C
C
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
CHARACTERISTICS
Maximum Instantaneous Forward Voltage at 1.0 A DC
Maximum Average Reverse Current
at Rated DC Blocking Voltage
@ T
A
= 25
o
C
I
R
@ T
A
= 100
o
C
10
mAmps
SYMBOL
V
F
SMD16APT
0.65
50
UNITS
Volts
uAmps
CHARACTERISTIC CURVES ( SMD16APT )
FIG. 2 - TYPICAL REVERSE CHARACTERISTICS
10
REVERSE CURRENT, (mA)
Tj=125
o
C
NSTANTANEOUS
RACTERISTICS
1.0
0.1
Tj=75
o
C
0.01
Tj=25
o
C
0.001
.6
.8
0
20
40
60
PEAK REVERSE VOLTAGE, ( V )
80
VOLTAGE,(V)
ION CAPACITANCE
PEAK FORWARD SURGE CURRETN(A)
50
40
FIG. 4 - MAXIMUM NON-REPETIVE FORWARD
SURGE CURRENT
T
J
= 25
o
C
8.3ms Single Half Sine-Wave
(JEDEC Method)
30
20
10
0
1
2
4
6
8 10
20
40
80 100
NUMBER OF CYCLES AT 60 Hz
4
10
40
80
OLTAGE, ( V )
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