NMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
SBM12PT
THRU
SBM16PT
SCHOTTKY BARRIER RECTIFIER
RANGE 20 - 60 Volts CURRENT 1.0 Ampere
erwriters Laboratory
on 94V-0
plications
ajority carrier conduction
ciency
ow forward voltage drop
SMB
gh frequency inverters, free
otection applications
ng guaranteed :
minals
0.155 (3.94)
0.130 (3.30)
(1)
(2)
0.083 (2.11)
0.077 (1.96)
A
0.190 (4.75)
0.160 (4.06)
0.012 (0.305)
0.006 (0.152)
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.008 (0.203)(max)
0.220 (5.59)
0.205 (5.21)
d plastic
solderable per MIL-STD-750,
es cathode end
3 gram
ELECTRICAL CHARACTERISTICS
ature unless otherwise specified.
resistive or inductive load.
ent by 20%.
Dimensions in inches and (millimeters)
SMB
SBM16PT
60
42
60
UNITS
Volts
Volts
Volts
Amps
Amps
pF
o
o
C unless otherwise noted )
SYMBOL
V
RRM
V
RMS
V
DC
I
O
I
FSM
C
J
R
JL
GS
Voltage
SBM12PT
20
14
20
SBM13PT SBM14PT
30
21
30
40
28
40
1.0
40
110
22
-65 to +125
-65 to +150
SBM15PT
50
35
50
ed Current
s single half sine-wave
C method)
2)
1)
C/W
o
o
T
J
T
STG
( At T
A
= 25
o
C unless otherwise noted )
SYMBOL
V
F
SBM12PT
-65 to +150
C
C
STICS
SBM13PT
0.50
SBM14PT
SBM15PT
SBM16PT
0.70
UNITS
Volts
mAmps
mAmps
Voltage at 1.0 A DC
@ T
A
= 25
o
C
t
0.5
I
R
10
@ T
A
= 100
o
C
RATING CHARACTERISTIC CURVES ( SBM12PT THRU SBM16PT )
INSTANTANEOUS FORWARD CURRENT, ( A )
FIG. 1 - TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT, (A)
1.0
FIG. 2 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
20
10
.75
T
SBM12P
T
SBM15P
.50
1.0
.25
Single
Half Wave 60H
Z
Resistive or
Inductive Load
SBM12PT
SBM13PT
SBM14PT
SBM15PT
SBM16PT
~SBM14
PT
~SBM16
PT
0
0
25
50
75
100
125
150
175
LEAD TEMPERATURE, (
o
C )
FIG. 3A - TYPICAL REVERSE CHARACTERISTICS
100
0.1
T
J
=25
o
C
Pulse Width=300us
1% Duty Cycle
.1
.3
.5
.7
.9
1.1
1.3
1.5
1.7
1.9
2.1
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG. 3B - TYPICAL REVERSE CHARACTERISTICS
100
INSTANTANEOUS REVERSE CURRENT, (mA)
10
T
J
=125
o
C
INSTANTANEOUS REVERSE CURRENT, (mA)
SBM12PT~SBM14PT
SBM15PT~SBM16PT
10
1.0
T
J
=75 C
o
1.0
T
J
=125
o
C
T
J
=150 C
o
.10
.10
T
J
=75
o
C
.01
T
J
=25 C
o
.01
T
J
=25 C
o
.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
.001
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE, ( % )
FIG. 5 - MAXIMUM NON-REPETIVE FORWARD
SURGE CURRENT
400
JUNCTION CAPACITANCE, ( pF )
200
100
80
60
40
20
10
.1
.4
1.0
4
10
40
80
REVERSSE VOLTAGE, ( V )
PEAK FORWARD SURGE CURRETN(A)
50
40
8.3ms Single Half Sine-Wave
(JEDEC Method)
T
J
=25
o
C
30
20
10
0
1
2
4
6
8 10
20
40
80 100
NUMBER OF CYCLES AT 60 Hz
NXP MCU
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