Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6
| 参数名称 | 属性值 |
| 是否无铅 | 不含铅 |
| 是否Rohs认证 | 符合 |
| 包装说明 | SMALL OUTLINE, R-PDSO-F6 |
| 针数 | 6 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE |
| 配置 | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V |
| 最大漏极电流 (ID) | 1 A |
| 最大漏源导通电阻 | 0.14 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-F6 |
| JESD-609代码 | e3 |
| 湿度敏感等级 | 1 |
| 元件数量 | 1 |
| 端子数量 | 6 |
| 工作模式 | ENHANCEMENT MODE |
| 最高工作温度 | 150 °C |
| 封装主体材料 | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR |
| 封装形式 | SMALL OUTLINE |
| 峰值回流温度（摄氏度） | 260 |
| 极性/信道类型 | N-CHANNEL |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子面层 | MATTE TIN (315) |
| 端子形式 | FLAT |
| 端子位置 | DUAL |
| 处于峰值回流温度下的最长时间 | 10 |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| Base Number Matches | 1 |
| CMLDM7120 | CMLDM7120BK | CMLDM7120TR | |
|---|---|---|---|
| 描述 | Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 | Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 | Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PICOMINI-6 |
| 包装说明 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 | SMALL OUTLINE, R-PDSO-F6 |
| 针数 | 6 | 6 | 6 |
| Reach Compliance Code | compliant | compliant | compliant |
| ECCN代码 | EAR99 | EAR99 | EAR99 |
| 其他特性 | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| 配置 | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| 最小漏源击穿电压 | 20 V | 20 V | 20 V |
| 最大漏极电流 (ID) | 1 A | 1 A | 1 A |
| 最大漏源导通电阻 | 0.14 Ω | 0.14 Ω | 0.14 Ω |
| FET 技术 | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 代码 | R-PDSO-F6 | R-PDSO-F6 | R-PDSO-F6 |
| JESD-609代码 | e3 | e3 | e3 |
| 元件数量 | 1 | 1 | 1 |
| 端子数量 | 6 | 6 | 6 |
| 工作模式 | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| 封装主体材料 | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| 封装形状 | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| 封装形式 | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| 极性/信道类型 | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| 认证状态 | Not Qualified | Not Qualified | Not Qualified |
| 表面贴装 | YES | YES | YES |
| 端子面层 | MATTE TIN (315) | MATTE TIN | MATTE TIN |
| 端子形式 | FLAT | FLAT | FLAT |
| 端子位置 | DUAL | DUAL | DUAL |
| 晶体管应用 | SWITCHING | SWITCHING | SWITCHING |
| 晶体管元件材料 | SILICON | SILICON | SILICON |
| Base Number Matches | 1 | 1 | - |
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