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CMLM0305TRLEADFREE: 产品描述Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET; 产品类别分立半导体晶体管; 文件大小586KB，共2页; 制造商Central Semiconductor; 标准

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CMLM0305TRLEADFREE概述

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

CMLM0305TRLEADFREE规格参数

参数名称	属性值
是否Rohs认证	符合
包装说明	,
Reach Compliance Code	compliant
配置	Single
最大漏极电流 (Abs) (ID)	0.28 A
FET 技术	METAL-OXIDE SEMICONDUCTOR
JESD-609代码	e3
湿度敏感等级	1
工作模式	ENHANCEMENT MODE
最高工作温度	150 °C
极性/信道类型	N-CHANNEL
最大功率耗散 (Abs)	0.35 W
表面贴装	YES
端子面层	Matte Tin (Sn)
Base Number Matches	1

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CMLM0305

CMLM0305G*

Multi Discrete Module

™

SURFACE MOUNT

N-CHANNEL MOSFET AND

LOW VF SILICON SCHOTTKY DIODE

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLM0305 and

CMLM0305G are Multi Discrete Modules™ consisting

of a single N-Channel Enhancement-mode MOSFET

and a Low VF Schottky diode packaged in a space

saving PICOmini™ SOT-563 surface mount case. This

device is designed for small signal general purpose

applications where size and operational efficiency are

prime requirements.

MARKING CODES: CMLM0305:

5C3

CMLM0305G*: 5CG

SOT-563 CASE

Device is

Halogen Free

by design

FEATURES:

• ESD protection up to 2kV

• Low rDS(on) Transistor (3Ω MAX @ VGS=1.8V)

• Low VF Schottky Diode (0.47V MAX @ 0.5A)

SYMBOL

TJ, Tstg

SYMBOL

VDS

VDG

VGS

IDM

SYMBOL

VRRM

IFRM

IFSM

350

300

150

-65 to +150

357

UNITS

°C

°C/W

UNITS

APPLICATIONS:

• DC / DC Converters

• Battery Powered Portable Equipment

MAXIMUM RATINGS - CASE:

(TA=25°C)

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance

MAXIMUM RATINGS - Q1:

(TA=25°C)

Drain-Source Voltage

Drain-Gate Voltage

Gate-Source Voltage

Continuous Drain Current

Maximum Pulsed Drain Current

MAXIMUM RATINGS - D1:

(TA=25°C)

Peak Repetitive Reverse Voltage

Continuous Forward Current

Peak Repetitive Forward Current, tp≤1.0ms

Peak Forward Surge Current, tp= 8.0ms

280

1.5

500

3.5

ELECTRICAL CHARACTERISTICS - Q1:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

MAX

IGSSF, IGSSR

VGS=5.0V

100

IGSSF, IGSSR

VGS=10V

2.0

IGSSF, IGSSR

VGS=12V

2.0

VDS=50V, VGS=0

IDSS

BVDSS

VGS=0, ID=10μA

VGS(th)

VDS=VGS, ID=250μA

0.49

1.0

Notes:

(1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

UNITS

μA

R3 (18-January 2010)

CMLM0305TRLEADFREE相似产品对比

	CMLM0305TRLEADFREE	CMLM0305BK	CMLM0305TR	CMLM0305GBKLEADFREE	CMLM0305GTRLEADFREE	CMLM0305GTR	CMLM0305GBK
描述	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6	Small Signal Field-Effect Transistor, 0.28A I(D), 50V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE, PICOMINI-6
是否Rohs认证	符合	不符合	不符合	符合	符合	不符合	不符合
包装说明	,	SMALL OUTLINE, R-PDSO-F6	SMALL OUTLINE, R-PDSO-F6	,	,	SMALL OUTLINE, R-PDSO-F6	HALOGEN FREE, PICOMINI-6
Reach Compliance Code	compliant	not_compliant	not_compliant	compliant	compliant	not_compliant	unknown
配置	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
最大漏极电流 (Abs) (ID)	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A	0.28 A
FET 技术	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
工作模式	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
最高工作温度	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
极性/信道类型	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES	YES	YES	YES	YES
JESD-609代码	e3	e0	e0	-	-	e0	e3
端子面层	Matte Tin (Sn)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-	-	Tin/Lead (Sn/Pb)	MATTE TIN
针数	-	6	6	-	-	6	6
ECCN代码	-	EAR99	EAR99	-	-	EAR99	EAR99
最小漏源击穿电压	-	50 V	50 V	-	-	50 V	50 V
最大漏极电流 (ID)	-	0.28 A	0.28 A	-	-	0.28 A	0.28 A
最大漏源导通电阻	-	3 Ω	3 Ω	-	-	3 Ω	3 Ω
最大反馈电容 (Crss)	-	5 pF	5 pF	-	-	5 pF	5 pF
JESD-30 代码	-	R-PDSO-F6	R-PDSO-F6	-	-	R-PDSO-F6	R-PDSO-F6
元件数量	-	1	1	-	-	1	1
端子数量	-	6	6	-	-	6	6
封装主体材料	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY
封装形状	-	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR
封装形式	-	SMALL OUTLINE	SMALL OUTLINE	-	-	SMALL OUTLINE	SMALL OUTLINE
认证状态	-	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified
端子形式	-	FLAT	FLAT	-	-	FLAT	FLAT
端子位置	-	DUAL	DUAL	-	-	DUAL	DUAL
晶体管应用	-	SWITCHING	SWITCHING	-	-	SWITCHING	SWITCHING
晶体管元件材料	-	SILICON	SILICON	-	-	SILICON	SILICON
厂商名称	-	-	-	Central Semiconductor	Central Semiconductor	Central Semiconductor	Central Semiconductor

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