Datasheet> 器件分类 > 分立半导体> 晶体管> CMLT6427ETR

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CMLT6427ETR: 产品描述Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PICOMINI-6; 产品类别分立半导体晶体管; 文件大小519KB，共2页; 制造商Central Semiconductor

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CMLT6427ETR概述

Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PICOMINI-6

CMLT6427ETR规格参数

参数名称	属性值
包装说明	SMALL OUTLINE, R-PDSO-F6
针数	6
Reach Compliance Code	compliant
ECCN代码	EAR99
最大集电极电流 (IC)	0.5 A
集电极-发射极最大电压	60 V
配置	DARLINGTON
最小直流电流增益 (hFE)	25000
JESD-30 代码	R-PDSO-F6
JESD-609代码	e3
元件数量	1
端子数量	6
最高工作温度	150 °C
封装主体材料	PLASTIC/EPOXY
封装形状	RECTANGULAR
封装形式	SMALL OUTLINE
极性/信道类型	NPN
最大功率耗散 (Abs)	0.35 W
认证状态	Not Qualified
表面贴装	YES
端子面层	MATTE TIN
端子形式	FLAT
端子位置	DUAL
晶体管应用	AMPLIFIER
晶体管元件材料	SILICON
标称过渡频率 (fT)	200 MHz
Base Number Matches	1

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CMLT6427E

ENHANCED SPECIFICATION

SURFACE MOUNT

NPN DARLINGTON SILICON

TRANSISTOR

w w w. c e n t r a l s e m i . c o m

DESCRIPTION:

The CENTRAL SEMICONDUCTOR CMLT6427E is

an Enhanced Specification, PICOmini™, NPN Silicon

Darlington Transistor. High DC Current gains, coupled

with a Low Saturation Voltage, make this an excellent

choice for industrial/consumer applications where

operational efficiency and small size are top priority.

MARKING CODE: C64

SOT-563 CASE

APPLICATIONS:

FEATURES:

•

Motor drivers

•

Relay drivers

•

Pre-amplifier input applications

•

Voltage regulator controls

MAXIMUM RATINGS:

(TA=25°C)

♦

Collector-Base Voltage

♦

Collector-Emitter Voltage

Emitter-Base Voltage

Continuous Collector Current

Power Dissipation (Note 1)

Power Dissipation (Note 2)

Power Dissipation (Note 3)

Operating and Storage Junction Temperature

Thermal Resistance (Note 1)

•

High current (500mA Max)

•

High DC current gain (15K Min)

•

Low saturation voltage (VCE(SAT)= 0.8V Max)

•

High input impedance

•

PICOmini™

SOT-563 surface mount package

SYMBOL

VCBO

VCES

VCEO

VEBO

TJ, Tstg

UNITS

°C

°C/W

500

350

300

150

-65 to +150

357

ELECTRICAL CHARACTERISTICS:

(TA=25°C unless otherwise noted)

SYMBOL

TEST CONDITIONS

MIN

TYP

ICBO

VCB=30V

♦

ICEO

VCE=25V

IEBO

♦

BVCBO

♦

BVCES

BVCEO

VEB=10V

IC=100µA

IC=10mA

MAX

100

UNITS

♦

Enhanced Specification

Notes: (1) Ceramic or aluminum core PC Board with copper mounting pad area of 4.0mm

(2) FR-4 Epoxy PC Board with copper mounting pad area of 4.0mm

(3) FR-4 Epoxy PC Board with copper mounting pad area of 1.4mm

R1 (20-January 2010)

CMLT6427ETR相似产品对比

	CMLT6427ETR	CMLT6427ETRLEADFREE	CMLT6427EBK	CMLT6427EBKLEADFREE
描述	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PICOMINI-6	Transistor	Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PICOMINI-6	Transistor
Reach Compliance Code	compliant	compliant	compliant	compliant
最大集电极电流 (IC)	0.5 A	0.5 A	0.5 A	0.5 A
配置	DARLINGTON	DARLINGTON	DARLINGTON	DARLINGTON
最小直流电流增益 (hFE)	25000	15000	25000	15000
最高工作温度	150 °C	150 °C	150 °C	150 °C
极性/信道类型	NPN	NPN	NPN	NPN
最大功率耗散 (Abs)	0.35 W	0.35 W	0.35 W	0.35 W
表面贴装	YES	YES	YES	YES

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