CHENMKO ENTERPRISE CO.,LTD
CHM9436AJPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CURRENT 6.2 Ampere
FEATURE
* Small flat package. (SO-8 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1
SO-8
4.06 (0.160)
3.70 (0.146)
8
CONSTRUCTION
* N-Channel Enhancement
5.00 (0.197)
4.69 (0.185)
4
5
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
.25 (0.010)
.17 (0.007)
6.20 (0.244)
5.80 (0.228)
CIRCUIT
8
D D
D
D
5
1
S S
S
G
4
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM9436AJPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
30
V
V
±
20
6.2
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
25
2500
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RATING CHARACTERISTIC ( CHM9436AJPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
30
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=6.2A
V
GS
=4.5V, I
D
=5.6A
1
30
40
7.0
3
38
52
V
m
Ω
S
Forward Transconductance
V
DS
=10V, I
D
= 6.2A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0 MHz
400
180
55
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=15V, I
D
=6.2A
V
GS
=10V
V
DD
= 10V
I
D
= 1.0A , V
GS
= 10 V
R
GEN
= 6
Ω
12
2
3
23
14
45
10
17
nC
45
35
90
30
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
2.5
1.3
A
V
Drain-Source Diode Forward Voltage I
S
= 2.5A , V
GS
= 0 V
RATING CHARACTERISTIC CURVES ( CHM9436AJPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
25
18
Figure 2. Transfer Characteristics
V
G S =1 0 V
I
D
, DRAIN CURRENT (A)
I
D
, DRAIN CURRENT (A)
20
8.0V
6.0V
5.0V
15
12
15
T
J
=-55°C
9
10
V
G S =4 . 0 V
5
6
T
J
=125°C
3
V
G S =3 . 0 V
0
0
3.0
2.0
1.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
4.0
0
0
T
J
=25°C
3.0
2.0
1.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
4.0
Figure 3. Gate Charge
10
V
DS
=15V
I
D
=6.2A
2.2
Figure 4. On-Resistance Variation with
Temperature
V
GS
=10V
I
D
=6.2A
V
GS
, GATE TO SOURCE VOLTAGE (V)
DRAIN-SOURCE ON-RESISTANCE
8
1.9
R
DS(on)
, NO
RMALIZED
1.6
6
1.3
4
1.0
2
0.7
0
0
3
6
Q
g
, TOTAL GATE CHARGE (nC)
9
12
0.4
-100
-50
0
50
100
T
J
, JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
1.2
V
DS
=V
GS
I
D
=250uA
V
th
, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
嵌入式系统
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
