CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Enhancement Mode Field Effect Transistor
N-channel: VOLTAGE 30 Volts
P-channel: VOLTAGE 30 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM8958JPT
CURRENT 7 Ampere
CURRENT 5.2 Ampere
FEATURE
* Small flat package. (SO-8 )
* Super high dense cell design for extremely low R
DS(ON)
.
* Lead free product is acquired.
* High power and current handing capability.
1
SO-8
4.06 (0.160)
3.70 (0.146)
8
CONSTRUCTION
* N-Channel & P-Channel Enhancement in the package
5.00 (0.197)
4.69 (0.185)
4
5
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
.25 (0.010)
.17 (0.007)
6.20 (0.244)
5.80 (0.228)
CIRCUIT
D1 D1 D2 D2
8
5
1
4
S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
N-Channel
P-Channel
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
30
-30
V
V
±
20
7.0
(Note 3)
±
20
-5.2
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
A
20
2000
-55 to 150
-55 to 150
-20
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RATING CHARACTERISTIC CURVES ( CHM8958JPT )
N-Channel Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 24 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
30
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=7A
V
GS
=4.5V, I
D
=6A
1
22
30
25
3
28
40
V
m
Ω
S
Forward Transconductance
V
DS
=5V, I
D
= 7A
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=15V, I
D
=5.8A
V
GS
=10V
V
DD
= 15V
I
D
= 1.0A , V
GS
= 10 V
R
GEN
= 2.7
Ω
12.3
1.5
2.5
9
4
24
4
16
nC
20
10
50
10
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
1.3
1.2
A
V
Drain-Source Diode Forward Voltage I
S
= 1.3A , V
GS
= 0 V
(Note 2)
RATING CHARACTERISTIC CURVES ( CHM8958JPT )
P-Channel Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
-30
-1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= -250 µA
V
GS
=-10V, I
D
=-5A
V
GS
=-4.5V, I
D
=-4A
-1
42
60
10
-3
52
80
V
m
Ω
S
Forward Transconductance
V
DS
= -5V , I
D
= -5A
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=-15V, I
D
=-5.3A
V
GS
=-10V
V
DD
= -15V
I
D
= -1.0A , V
GS
= -10 V
R
GEN
= 6
Ω
11
1.7
2.3
12
5
57
24
14
nC
25
10
110
50
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
-1.3
-1.2
A
V
Drain-Source Diode Forward Voltage I
S
= -1.3A , V
GS
= 0 V
(Note 2)
RATING CHARACTERISTIC CURVES ( CHM8958JPT )
N-Channel Typical Electrical Characteristics
Figure 1. Output Characteristics
20
25
Figure 2. Transfer Characteristics
16
20
I
D
, DRAIN CURRENT (A)
V
G S =
10,6,4.5,4,3.5V
12
I
D
, DRAIN CURRENT (A)
15
8
V
G S =
3.0V
10
T
J
=25°C
5
J
T
=125°C
4
T
J
=-55°C
3.0
3.5
4.0
4.5
0
0
1.5
1.0
0.5
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
2.0
0
1.5
2.0
2.5
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
V
DS
=15V
I
D
=5.8A
2.2
Figure 4. On-Resistance Variation with
Temperature
V
GS
=7V
I
D
=10A
1.9
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
DRAIN-SOURCE ON-RESISTANCE
R
DS(on)
, NO
RMALIZED
0
3
6
9
Q
g
, TOTAL GATE CHARGE (nC)
12
15
1.6
6
1.3
4
1.0
2
0.7
0
0.4
-100
-50
0
50
100
T
J
, JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
1.2
V
DS
=V
GS
I
D
=250uA
V
th
, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
RATING CHARACTERISTIC CURVES ( CHM8958JPT )
P-Channel Typical Electrical Characteristics
Figure 1. Output Characteristics
30
15
Figure 2. Transfer Characteristics
V
G S =
-10,-6VV
V
G S =
-5.0V
24
12
-I
D
, DRAIN CURRENT (A)
18
V
G S =
-4.5V
V
G S =
-4.0V
V
G S =
-3.5V
V
G S =-
3.0V
-I
D
, DRAIN CURRENT (A)
9
12
6
6
3
T
J
=-55°C
T
J
=125°C
T
J
=25°C
3.0
3.5
4.0
4.5
0
0
1.0
4.0
5.0
2.0
3.0
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
6.0
0
1.5
2.0
2.5
-V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
V
DS
=-15V
I
D
=-5.3A
2.2
Figure 4. On-Resistance Variation with
Temperature
V
GS
=5V
I
D
=10A
1.9
-V
GS
, GATE TO SOURCE VOLTAGE (V)
8
DRAIN-SOURCE ON-RESISTANCE
R
DS(on)
, NO
RMALIZED
0
3
6
Q
g
, TOTAL GATE CHARGE (nC)
9
12
6
1.6
1.3
4
1.0
2
0.7
0
0.4
-100
-50
0
50
100
T
J
, JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
1.2
V
DS
=V
GS
I
D
=250uA
V
th
, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
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