CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM6426PAPT
CURRENT 16 Ampere
FEATURE
* Small package. (TO-252A)
* High density cell design for extremely low R
DS(ON)
.
.280 (7.10)
.238 (6.05)
.220 (5.59)
.195 (4.95)
TO-252A
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
* N-Channel Enhancement
(1)
(3) (2)
.417 (10.6)
.346 (8.80)
CONSTRUCTION
.261 (6.63)
.213 (5.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
.024 (0.61)
.016 (0.40)
CIRCUIT
(1)
G
D
(3)
2 Source
3 Drain( Heat Sink )
S
(2)
Dimensions in inches and (millimeters)
TO-252A
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM6426PAPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
60
V
V
±
20
16
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
64
32
-55 to 150
-55 to 150
W
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
ELECTRICAL CHARACTERISTIC ( CHM6426PAPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
60
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=8A
1
45
65
3
66
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=6.4A
85
m
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
680
80
45
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=30V, I
D
=4.5A
V
GS
=10V
V
DD
= 30V
I
D
= 1.0A , V
GS
= 10 V
R
GEN
= 6
Ω
12.9
1.6
2.5
10
2.9
29.7
2.5
17.1
nC
20
5.8
59.4
5
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
16
1.2
A
V
Drain-Source Diode Forward Voltage I
S
= 8A , V
GS
= 0 V
RATING CHARACTERISTIC CURVES ( CHM6426PAPT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
25
25
Figure 2. Transfer Characteristics
20
V
G S =1 0 , 8 , 6 , 5 V
20
I
D
, DRAIN CURRENT (A)
15
V
G S =4 . 0 V
I
D
, DRAIN CURRENT (A)
15
10
10
J
T
=125°C
5
T
J
=-55°C
T
J
=25°C
5
0
0
1.0
3.0
4.0
2.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
5.0
0
0
3.0
4.0
2.0
1.0
V
GS
, GATE-TO-SOURCE VOLTAGE (V)
5.0
Figure 3. Gate Charge
10
V
DS
=30V
I
D
=4.5A
2.2
Figure 4. On-Resistance Variation with
Temperature
V
GS
=10V
I
D
=8A
1.9
V
GS
, GATE TO SOURCE VOLTAGE (V)
8
DRAIN-SOURCE ON-RESISTANCE
R
DS(on)
, NO
RMALIZED
1.6
6
1.3
4
1.0
2
0.7
0
0
3
6
9
Q
g
, TOTAL GATE CHARGE (nC)
12
15
0.4
-100
-50
0
50
100
T
J
, JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
1.2
V
DS
=V
GS
I
D
=250uA
V
th
, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
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