CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM4804AJPT
CURRENT 7.5 Ampere
FEATURE
* Small flat package. (SO-8 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1
SO-8
4.06 (0.160)
3.70 (0.146)
8
CONSTRUCTION
* N-Channel Enhancement
5.00 (0.197)
4.69 (0.185)
4
5
.51 (0.020)
.10 (0.012)
1.27 (0.05)BSC
1.75 (0.069)
1.35 (0.053)
.25 (0.010)
.05 (0.002)
.25 (0.010)
.17 (0.007)
6.20 (0.244)
5.80 (0.228)
CIRCUIT
D1 D1 D2 D2
8
5
1
4
S1 G1 S2 G2
Dimensions in millimeters
SO-8
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM4804AJPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
30
V
V
±
20
7.5
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
30
2000
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RATING CHARACTERISTIC CURVES ( CHM4804AJPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 30 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
30
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=6.3A
V
GS
=4.5V, I
D
=5A
1
17
24
7
3
22
30
V
m
Ω
S
Forward Transconductance
V
DS
=15V, I
D
= 6A
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=10V, I
D
=9A
V
GS
=5V
V
DD
= 15V
I
D
= 1.0A , V
GS
= 10 V
R
GEN
= 6
Ω
13.7
3.7
4.2
13
2.6
41.2
5.1
18
nC
20
5
60
9
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
2.3
1.2
A
V
Drain-Source Diode Forward Voltage I
S
= 2.3A , V
GS
= 0 V
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