CHENMKO ENTERPRISE CO.,LTD
CHM3413SPT
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 20 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CURRENT 3.5 Ampere
FEATURE
* Small flat package. (SC-88 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.2~1.4
(1)
(6)
SC-88/SOT-363
0.65
0.65
(3)
2.0~2.2
CONSTRUCTION
* P-Channel Enhancement
0.15~0.35
(4)
1.15~1.35
MARKING
* 3413
0.08~0.15
0.1 Min.
4
0.8~1.1
0~0.1
2.15~2.45
CIRCUIT
6
D
D
S
1
D
D
G
3
Dimensions in millimeters
SC-88/SOT-363
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM3413SPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
-20
V
V
±
12
-3.5
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
A
-15
625
-55 to 150
-55 to 150
mW
°C
°C
Thermal characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1)
250
°C/W
RATING CHARACTERISTIC CURVES ( CHM3413SPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -20 V, V
GS
= 0 V
V
GS
= 12V,V
DS
= 0 V
V
GS
= -12V, V
DS
= 0 V
-20
-1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= -250 µA
V
GS
=-4.5V, I
D
=-3.4A
V
GS
=-2.5V, I
D
=-2.4A
-0.36
76
97
6
-0.8
95
120
V
m
Ω
S
Forward Transconductance
V
DS
= -5V, I
D
= -2.8A
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=-6V, I
D
=-2.8A
V
GS
=-4.5V
V
DD
= -6V
I
D
= -1.0A , V
GEN
= -4.5 V
R
G
= 6
Ω
4.8
1
1
10
13
18
15
8
nC
16
23
25
20
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage I
S
= -1.5A , V
GS
= 0 V
-1.5
-1.2
A
V
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