CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 40 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM2342PT
CURRENT 4.2 Ampere
FEATURE
* Small flat package. (SC-59 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.7~2.1
(2)
(3)
SC-59/SOT-346
0.95
2.7~3.1
0.95
(1)
CONSTRUCTION
* N-Channel Enhancement
0.3~0.51
1.2~1.9
0.89~1.3
0.085~0.2
0.3~0.6
2.1~2.95
(1)
G
CIRCUIT
D
(3)
0~0.1
S
(2)
Dimensions in millimeters
SC-59/SOT-346
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM2342PT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
40
V
V
±
20
4.2
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
15
1250
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RATING CHARACTERISTIC CURVES ( CHM2342PT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 40 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
40
1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=4.2A
1.0
37
44
3.0
45
V
R
DS(ON)
Static Drain-Source On-Resistance
V
GS
=4.5V, I
D
=3.3A
58
m
Ω
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 15V, V
GS
= 0V,
f = 1.0 MHz
680
110
65
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=20V, I
D
=4.2A
V
GS
=10V
V
DD
= 20V
I
D
= 4.2A , V
GS
= 10 V
R
GEN
= 3
Ω
13.5
1.7
2.8
11
3
26
3
18
nC
25
10
55
10
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
4.2
1.2
A
V
Drain-Source Diode Forward Voltage I
S
= 1.25A , V
GS
= 0 V
(Note 2)
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