CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 30 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM2323PT
CURRENT 4.1 Ampere
FEATURE
* Small flat package. (SC-59 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.7~2.1
(2)
(3)
SC-59/SOT-346
0.95
2.7~3.1
0.95
(1)
CONSTRUCTION
* P-Channel Enhancement
0.3~0.51
1.2~1.9
0.89~1.3
0.085~0.2
0.3~0.6
2.1~2.95
1
G
2
S
CIRCUIT
3
D
0~0.1
Dimensions in millimeters
SC-59/SOT-346
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM2323PT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
-30
V
V
±
20
-4.1
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
-16
1250
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RATING CHARACTERISTIC CURVES ( CHM2323PT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -30 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
-30
-1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
=-250 µA
V
GS
=-10V, I
D
=-4.1A
V
GS
=-4.5V, I
D
=-3.2A
-1.0
40
60
4
-3.0
48
80
V
m
Ω
S
Forward Transconductance
V
DS
=-15V, I
D
= -4.1A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= -15V, V
GS
= 0V,
f = 1.0 MHz
845
155
95
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=-15V, I
D
=-4.1A
V
GS
=-10V
V
DD
= -15V
I
D
= -10A , V
GS
= -10 V
R
GEN
= 6
Ω
13.8
1.8
2.2
11
4
59
23
18.3
nC
22
8
118
46
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
-4.1
-1.2
A
V
Drain-Source Diode Forward Voltage I
S
= -1.7A , V
GS
= 0 V
RATING CHARACTERISTIC CURVES ( CHM2323PT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
16
10
Figure 2. Transfer Characteristics
-V
G S =1 0 , 8 , 6 , 4 V
12
8
-I
D
, DRAIN CURRENT (A)
9
-I
D
, DRAIN CURRENT (A)
6
6
4
J
T
=125°C
2
-V
G S =3 . 0 V
3
T
J
=-55°C
T
J
=25°C
0
0
0.4
0.8
1.2
1.6
-V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
2.0
0
0
1.0
2.0
3.0
4.0
5.0
6.0
-V
GS
, GATE-TO-SOURCE VOLTAGE (V)
Figure 3. Gate Charge
10
V
DS
=-15V
I
D
=-4.1A
2.2
Figure 4. On-Resistance Variation with
Temperature
V
GS
=-10V
I
D
=-4.1A
1.9
-V
GS
, GATE TO SOURCE VOLTAGE (V)
8
DRAIN-SOURCE ON-RESISTANCE
R
DS(on)
, NO
RMALIZED
1.6
6
1.3
4
1.0
2
0.7
0
0
3
6
Q
g
, TOTAL GATE CHARGE (nC)
9
12
0.4
-100
-50
0
50
100
T
J
, JUNCTION T EMPERATURE (°C)
150
200
Figure 5. Gate Threshold Variation with
Temperature
1.3
1.2
V
DS
=V
GS
I
D
=250uA
V
th
, NORMALIZED GATE-SOURCE
THRESHOLD VOLTAGE
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
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