CHENMKO ENTERPRISE CO.,LTD
CHM540ANPT
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 100 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CURRENT 36 Ampere
FEATURE
* Small package. (D2PAK)
* Super high dense cell design for extremely low R
DS(ON)
.
* High power and current handing capability.
0.420(10.67)
0.380(9.69)
0.245(6.22)
MIN.
K
D2PAK
0.190(4.83)
0.160(4.06)
0.055(1.40)
0.045(1.14)
0.055(1.40)
0.047(1.19)
1
3
2
0.575(14.60)
0.360(9.14)
* N-Channel Enhancement
0.625(15.88)
CONSTRUCTION
0.320(8.13)
0.110(2.79)
0.090(2.29)
0.100(2.54)
0.095(2.41)
0.037(0.940)
0.027(0.686)
0.025(0.64)
0.018(0.46)
0.110(2.79)
0.080(2.03)
CIRCUIT
(1)
G
D
(3)
1 Gate
2 Source
3 Drain ( Heat Sink )
S
(2)
Dimensions in inches and (millimeters)
D2PAK
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM540ANPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
100
V
V
±
20
36
I
D
- Pulsed
P
D
T
J
T
STG
(Note 3)
A
120
140
-55 to 150
-55 to 150
W
°C
°C
Maximum Power Dissipation at Tc = 25 °C
Operating Temperature Range
Storage Temperature Range
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
ELECTRICAL CHARACTERISTIC ( CHM540ANPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 100 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
100
25
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
Forward Transconductance
V
DS
= V
GS
, I
D
= 250 µA
V
GS
=10V, I
D
=18A
V
DS
=25V, I
D
= 18A
2
4
V
m
Ω
S
40
14
48
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
DS
= 25V, V
GS
= 0V,
f = 1.0 MHz
832
240
105
pF
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=80V, I
D
=18A
V
GS
=10V
V
DD
= 50V
I
D
= 18A , V
GS
= 10 V
R
GEN
= 5.1
Ω
37.5
6
18
13
11
32
15
48
nC
40
35
65
45
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
(Note 2)
36
1.3
A
V
Drain-Source Diode Forward Voltage I
S
= 18A , V
GS
= 0 V
模拟电子
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