CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
P-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 60 Volts
APPLICATION
* Servo motor control.
* Power MOSFET gate drivers.
* Other switching applications.
CHM20P06PAPT
CURRENT 13 Ampere
FEATURE
* Small flat package. ( TO-252A )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
.280 (7.10)
.238 (6.05)
.220 (5.59)
.195 (4.95)
TO-252A
.094 (2.40)
.087 (2.20)
.035 (0.89)
.018 (0.45)
* P-Channel Enhancement
(1)
(3) (2)
.417 (10.6)
.346 (8.80)
CONSTRUCTION
.261 (6.63)
.213 (5.40)
.035 (0.90)
.025 (0.64)
.102 (2.59)
.078 (1.98)
1 Gate
.024 (0.61)
.016 (0.40)
CIRCUIT
1
G
3
D
2 Source
3 Drain( Heat Sink )
2
S
Dimensions in inches and (millimeters)
TO-252A
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM20P06PAPT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
-60
V
V
±
20
-13
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
Operating Temperature Range
Storage Temperature Range
(Note 3)
A
-40
42
-55 to 150
-55 to 150
W
°C
°C
Note : 1. Surface Mounted on FR4 Board , t <=10sec
2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2%
3. Repetitive Rating , Pulse width linited by maximum junction temperature
4. Guaranteed by design , not subject to production trsting
Thermal characteristics
RATING CHARACTERISTIC CURVES ( CHM20P06PAPT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= -250 µA
V
DS
= -48 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
-60
-1
+100
-100
V
µA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= -250 µA
V
GS
=-10V, I
D
=-4.5A
V
GS
=-4.5V, I
D
=-3.9A
-1
92
120
2
-3
105
150
V
m
Ω
S
Forward Transconductance
V
DS
= -5V, I
D
= -3A
SWITCHING CHARACTERISTICS
(Note 4)
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=-30V, I
D
=-4.5A
V
GS
=-10V
V
DD
= -30V
I
D
= -1.0A , V
GS
= -10 V
R
GEN
= 6
Ω
21
3
6
11
9
46
22
29
nC
45
30
150
75
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
(Note 1)
-13
-1.3
A
V
Drain-Source Diode Forward Voltage I
S
= -4.5A , V
GS
= 0 V
(Note 2)
嵌入式系统
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