CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
N-Channel Enhancement Mode Field Effect Transistor
VOLTAGE 100 Volts
APPLICATION
* Servo motor control.
* Other switching applications.
CHM310PT
CURRENT 170 mAmpere
FEATURE
* Small flat package. (SC-59 )
* High density cell design for extremely low R
DS(ON)
.
* Rugged and reliable.
* High saturation current capability.
1.7~2.1
(2)
(3)
SC-59/SOT-346
0.95
2.7~3.1
0.95
(1)
CONSTRUCTION
* N-Channel Enhancement
0.3~0.51
1.2~1.9
0.89~1.3
0.085~0.2
0.3~0.6
2.1~2.95
(1)
G
CIRCUIT
D
(3)
0~0.1
S
(2)
Dimensions in millimeters
SC-59/SOT-346
Absolute Maximum Ratings
Symbol
Parameter
T
A
= 25°C unless otherwise noted
CHM310PT
Units
V
DSS
V
GSS
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
100
V
V
±
20
170
I
D
- Pulsed
P
D
T
J
T
STG
Maximum Power Dissipation
(Note 1)
Operating Temperature Range
Storage Temperature Range
(Note 1)
mA
680
300
-55 to 150
-55 to 150
mW
°C
°C
Note : 1. Part mounted on FR-4 board with recommended pad layout.
2. Short duration test pulse used to minimize self-heating effect
Thermal characteristics
RATING CHARACTERISTIC CURVES ( CHM310PT )
Electrical Characteristics
T
Symbol
Parameter
A
= 25°C unless otherwise noted
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
I
DSS
I
GSSF
I
GSSR
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Body Leakage
V
GS
= 0 V, I
D
= 10 µA
V
DS
= 100 V, V
GS
= 0 V
V
GS
= 20V,V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
100
100
+50
-50
V
nA
nA
nA
ON CHARACTERISTICS
(Note 2)
V
GS(th)
R
DS(ON)
g
FS
Gate Threshold Voltage
Static Drain-Source On-Resistance
V
DS
= V
GS
, I
D
= 1 mA
V
GS
=4.5V, I
D
=170mA
V
GS
=10V, I
D
=170mA
0.8
5
4.5
80
2.8
9
6
V
Ω
mS
Forward Transconductance
V
DS
=10V, I
D
= 4.0A
SWITCHING CHARACTERISTICS
Q
g
Q
gs
Q
gd
t
on
t
r
t
off
t
f
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Time
Rise Time
Turn-Off Time
Fall Time
V
DS
=10V, I
D
=0.22A
V
GS
=10V
V
DD
= 30V
I
D
= 0.28A , V
GS
= 10 V
R
GEN
= 50
Ω
1.4
0.15
0.2
2
nC
8
8
13
16
nS
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
V
SD
Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage I
S
= 115mA , V
GS
= 0 V
115
1.4
mA
V
RATING CHARACTERISTIC CURVES ( CHM310PT )
Typical Electrical Characteristics
Figure 1. Output Characteristics
0.7
0.6
2.4
Figure 2. I
D
vs R
DS(ON)
Characteristics
V
G S =1 0 , 7 , 6 , 5 V
I
D
, DRAIN CURRENT (A)
0.5
DRAIN-SOURCE ON-RESISTANCE
V
G S =3 V
2.0
R
DS(on)
, NO
RMALIZED
V
G S =4 V
0.4
V
G S =4 V
1.6
0.3
0.2
0.1
V
G S =3 V
1.2
V
G S =5 , 6 , 7 , 1 0 V
0.8
0.1
0.2
0.3
0.4
0.5
0.6
0
0
1.0
3.0
4.0
2.0
V
DS
, DRAIN-TO-SOURCE VOLTAGE (V)
5.0
I
D
, DRAIN CURRENT (A)
Figure 3. Gate Threshold Variation with
Temperature
1.2
V
DS
=V
GS
I
D
=250uA
2.2
2.0
Figure 4. On-Resistance Variation with
Temperature
V
GS
=10V
I
D
=170mA
V
th
, NORMALIZED GATE-SOURCE
DRAIN-SOURCE ON-RESISTANCE
1.1
THRESHOLD VOLTAGE
R
DS(on)
, NO
RMALIZED
1.6
1.0
1.2
0.9
0.8
0.8
0.7
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
0.4
-50
-25
0
25
50
75
100
T
J
, JUNCTION T EMPERATURE (°C)
125
150
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