CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 15 Volts
APPLICATION
* Small Signal Amplifier .
CHEMZ7PT
CURRENT 500 mAmpere
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage V
CE(sat)
=0.25V(max.)(I
C
=200mA)
* Low cob. Cob=7.5pF(Typ.)
* P
C
= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
* Both the 2SC5585 & 2SA2018 in one package.
* NPN / PNP Silicon Transistor
0.9~1.1
0.15~0.3
(3)
(4)
SOT-563
(1)
(5)
0.50
0.50
1.5~1.7
MARKING
* Z7
1.1~1.3
0.5~0.6
0.09~0.18
CIRCUIT
6
4
1.5~1.7
1
3
Dimensions in millimeters
SOT-563
2SC5585 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
STG
T
J
Note
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC Output current
CONDITIONS
−
−
−
−
NOTE.1
NOTE.2
−
−
−55
−
MIN.
MAX.
15
12
6
500
1000
150
+150
150
O
UNIT
V
V
V
mA
mW
C
C
O
2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
IC
I
CP
P
c
T
STG
T
J
Note
1. Single Pulse Pw=1ms
2SC5585 CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
I
C
=1mA
I
C
=10uA
I
E
=10uA
V
CB
=15V
V
EB
=6V
V
CE
=2V,I
C
=10mA
I
C
=200mA,I
B
=10mA
V
CB
=10V,I
E
=0mA,f=1MHZ
V
CE
=2V,I
E
=-10mA,f=100MHZ
MIN.
12
15
6
−
−
270
−
−
−
TYP.
−
−
−
−
−
−
90
7.5
320
−
−
−
100
100
680
250
−
−
MAX.
V
V
V
nA
nA
−
mV
pF
MHz
UNIT
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
−
−
−
−
MIN.
MAX.
-15
-12
-6
-500
-1000
150
+150
150
UNIT
V
V
V
mA
mW
O
DC Output current
power dissipation
Storage temperature
Junction temperature
NOTE.1
−
−
−55
−
C
C
O
BV
CEO
Collector-emitter breakdown voltage
BV
CBO
Collector-base breakdown voltage
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Cob
f
T
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
2SA2018 CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
I
C
=-1mA
I
C
=-10uA
I
E
=-10uA
V
CB
=-15V
V
EB
=-6V
V
CE
=-2V,I
C
=-10mA
I
C
=-200mA,I
B
=-10mA
V
CB
=-10V,I
E
=0mA,f=1MHZ
V
CE
=-2V,I
E
=10mA,f=100MHZ
MIN.
-12
-15
-6
−
−
270
−
−
−
TYP.
−
−
−
−
−
−
-100
6.5
260
−
−
−
-100
-100
680
-250
−
−
MAX.
V
V
V
nA
nA
−
mV
pF
MHz
UNIT
BV
CEO
Collector-emitter breakdown voltage
BV
CBO
Collector-base breakdown voltage
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Cob
f
T
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
RATING CHARACTERISTIC CURVES ( CHEMZ7PT )
2SC5585 Typical Electrical Characteristics
Fig.1 Ground emitter propagation
characteristics
1000
Fig.2 DC current gain vs. collector
current
1000
Ta=125 C
25 C
DC CURRENT GAIN : h
FE
O
O
COLLECTOR CURRENT : I
C
(mA)
V
CE
=2V
pulsed
V
CE
=2V
pulsed
-40 C
100
O
100
Ta=125 C
Ta=25 C
10
O
O
O
10
Ta=-40 C
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
Ta=25 C
pulsed
O
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
I
C
/I
B
=20
pulsed
100
100
Ta=125 C
O
Ta=25 C
O
Ta=-40 C
10
O
Ta=125 C
10
Ta=25 C
O
O
Ta=-40 C
1
1
10
100
1000
O
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
RATING CHARACTERISTIC CURVES ( CHEMZ7PT )
2SC5585 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage
vs. collector current
BASER SATURATION VOLTAGE : V
BE(sat)
(mV)
Fig.6 Gain bandwidth product vs.
collector current
1000
TRANSITION FREQUENCY : f
T
(MHZ)
1000
I
C
/I
B
=20
pulsed
Ta=-40
O
C
O
Ta=25 C
O
Ta=125 C
V
CE
=2V
O
Ta=25 C
pulsed
100
100
10
10
1
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
I
E
=0A
f=1MH
Z
O
Ta=25 C
EMITTER INPUT CAPACITANCE : Cib (pF)
100
Cib
10
Cob
1
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
RATING CHARACTERISTIC CURVES ( CHEMZ7PT )
2SA2018 Typical Electrical Characteristics
Fig.1 Ground emitter propagation
characteristics
1000
Fig.2 DC current gain vs. collector
current
1000
Ta=125 C
25 C
DC CURRENT GAIN : h
FE
O
O
COLLECTOR CURRENT : I
C
(mA)
V
CE
=2V
pulsed
V
CE
=2V
pulsed
-40 C
100
O
100
10
Ta=125 C
Ta=25 C
O
O
O
10
Ta=-40 C
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
Ta=25 C
pulsed
O
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
I
C
/I
B
=20
pulsed
100
Ta=125 C
Ta=25 C
10
Ta=-40 C
O
O
O
100
Ta=125 C
O
Ta=25 C
O
Ta=-40 C
O
10
1
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
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