CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Small Signal Amplifier .
CHEMT3PT
CURRENT 150 mAmpere
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage V
CE(sat)
=-0.5V(max.)(I
C
=50mA)
* Low cob. Cob=4.0pF(Typ.)
* P
C
= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
* Two the 2SA1037K in one package.
* PNP Silicon Transistor
0.9~1.1
0.15~0.3
(3)
(4)
SOT-563
(1)
(5)
0.50
0.50
1.5~1.7
MARKING
* T3
1.1~1.3
0.5~0.6
0.09~0.18
3
1
CIRCUIT
1.5~1.7
4
5
Dimensions in millimeters
SOT-563
2SA1037K
LIMITING VALUES
MAXIMUM RATINGES
( At T
A
= 25 C unless otherwise noted )
RATINGS
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Peak Collector Current
Peak Base Current
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
T
A
≤
25
O
C; Note 1
CONDITION
Open Emitter
Open Base
Open Collector
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
TOT
T
STG
T
J
T
AMB
MIN.
-
-
-
-
-
-
-
-55
-
-55
MAX.
-60
-50
-6
-150
-150
-15
150
+150
+150
+150
UNITS
Volts
Volts
Volts
mAmps
mAmps
mAmps
mW
o
C
C
C
o
o
Note
RATING CHARACTERISTIC CURVES ( CHEMT3PT )
2SA1037K
CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
( At T
A
= 25
o
C unless otherwise noted )
PARAMETERS
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation
Voltage
Output Collector Capacitance
Transition Frequency
CONDITION
I
C
=-50uA
I
C
=-1mA
I
E
=-50uA
I
E
=0; V
CB
=-60V
I
C
=0; V
EB
=-6V
V
CE
=-6V
I
C
=-1mA
I
C
=-50mA; I
B
=-5mA
I
E
=ie=0; V
CB
=-12V;
f=1MHz
I
E
=2mA; V
CE
=-12V;
f=100MHz
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CEsat
C
ob
f
T
MIN.
-60
-50
-6
-
-
120
-
-
-
-
-
-
-
-
-
4
140
TYPE
-
MAX.
-
-
-
-0.1
-0.1
560
-0.5
5.0
-
Volts
pF
MHz
uA
UNITS
Volts
Volts
Volts
RATING CHARACTERISTIC CURVES ( CHEMT3PT )
2SA1037K Typical Electrical Characteristics
Fig.1
−50
COLLECTOR CURRENT : I
C
(mA)
Grounded emitter propagation
characteristics
Ta=100˚C
25˚C
−40˚C
V
CE
=−6V
Fig.2
−10
COLLECTOR CURRENT : I
C
(mA)
Grounded emitter output
characteristics
Fig.3 DC current gain vs.
collector current (1)
500
Ta=25˚C
V
CE
=−5V
−3V
−1V
−35.0
Ta=25˚C
−20
−10
−5
−2
−1
−0.5
−0.2
−0.1
−31.5
DC CURRENT GAIN : h
FE
−8
−28.0
−24.5
−6
−21.0
−17.5
200
−4
−14.0
−10.5
100
−2
−7.0
−3.5µA
50
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6
-1.8
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
−0.4
−0.8
−1.2
−1.6
I
B
=0
−2.0
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 DC current gain vs.
collector current (2)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.
5
Collector-emitter saturation
voltage vs. collector current
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.6 Collector-emitter saturation
voltage vs. collector current
−1
l
C
/l
B
=10
500
Ta=100˚C
25˚C
DC CURRENT GAIN : h
FE
−1
V
CE
=−6V
Ta=25˚C
−0.5
−0.5
200
−40˚C
100
−0.2
I
C
/I
B
=50
−0.2
Ta=100˚C
25˚C
−40˚C
−0.1
20
10
−0.1
50
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−0.05
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−0.2 −0.5 −1
−2
−5 −10 −20
−50 −100
−50 −100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Gain bandwidth product vs.
emitter current
1000
TRANSITION FREQUENCY : f
T
(MHz)
Ta=25˚C
V
CE
=−12V
500
200
100
50
0.5
1
2
5
10
20
50
100
EMITTER CURRENT : I
E
(mA)
无线连接
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
