CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHEMG1PT
CURRENT 30 mAmpere
FEATURE
* Small surface mounting type. (SOT-553)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
two CHDTC124E chips in one package.
Built in bias resistor(R1=22kΩ, Typ. )
(4)
(3)
SOT553
0.50
0.9~1.1
(5)
(1)
0.50
1.5~1.7
0.15~0.3
MARKING
* G1
0.5~0.6
1.1~1.3
0.19~0.18
1.5~1.7
CIRCUIT
3
R1
R2
2
R1
R2
1
4
5
Dimensions in millimeters
SOT553
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
IN
I
O
P
TOT
T
STG
PARAMETER
Supply voltage
Input voltage
DC Output current
Total power dissipation
Storage temperature
T
amb
≤
25
O
C, Note 1
CONDITIONS
−
-10
−
−
−55
−
MIN.
MAX.
50
+40
30
150
+150
150
V
V
mA
mW
O
UNIT
C
C
2004-07
T
J
Note
Junction temperature
O
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHEMG1PT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
50
V
O
=0.2V
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
OUTPUT CURRENT : Io
(A)
V
CC
=5V
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
100
200
500 1m
2m
5m 10m 20m 50m 100m
Ta =- 40
O
C
25
O
C
=
100
O
C
2m
1m
500
200
100
50
20
10
5
2
1
0
Ta=100
O
C
25
O
C
-40
O
C
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
Fig.3 DC current gain vs. output
current
1k
500
DC CURRENT GAIN : G
I
Fig.4 Output voltage vs. output
current
1
500m
OUTPUT VOLTAGE : V
O(on)
(V)
V
O
=5V
Ta=100
O
C
25
O
C
-40
O
C
l
O
/l
I
=20
Ta=100
O
C
25
O
C
-40
O
C
200
100
50
20
10
5
2
200m
100m
50m
20m
10m
5m
2m
1
100 200
500 1m 2m
5m 10m 20m 50m100m
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
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