CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
Power Management (Dual Transistor)
Tr1:VOLTAGE 12 Volts CURRENT 0.5 Ampere
DTr2:VOLTAGE 50 Volts CURRENT 50 mAmpere
APPLICATION
* Power management circuit
CHEMF22PT
FEATURE
* Small surface mounting type. (SOT-563)
* Power switching circuit in a single package.
* Mounting cost and area can be cut in half.
* Both the 2SC5585 & CHDTC114E in one package.
* Built in bias resistor(R1=10kΩ, Typ. )
(1)
(5)
SOT-563
MARKING
* FF
0.9~1.1
0.15~0.3
(3)
(4)
0.50
0.50
1.5~1.7
1.1~1.3
0.5~0.6
0.09~0.18
6
R1
Tr1
1
R2
DTr2
3
4
CIRCUIT
1.5~1.7
Dimensions in millimeters
SOT-563
2SC5585 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
cp
P
C
T
STG
T
J
Note
Total power dissipation
Storage temperature
Junction temperature
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
DC Output current
CONDITIONS
−
−
−
−
NOTE.1
NOTE.2
−
−
−55
−
MIN.
MAX.
15
12
6
500
1000
150
+150
150
O
UNIT
V
V
V
mA
mW
C
C
O
CHDTC114E
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CC
V
IN
I
O
DC Output current
I
C(Max.)
P
C
T
STG
Power dissipation
Storage temperature
Junction temperature
NOTE.1
NOTE.2
PARAMETER
Supply voltage
Input voltage
CONDITIONS
−
-10
−
−
−
−55
−
MIN.
MAX.
50
+40
50
mA
100
150
+150
150
mW
O
UNIT
V
V
C
T
J
Note
O
C
1. Characteristics of built-in transistor.
2. Each terminal mounter on a recommended land.
2SC5585 CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
PARAMETER
CONDITIONS
I
C
=1mA
I
C
=10uA
I
E
=10uA
V
CB
=15V
V
EB
=6V
V
CE
=2V,I
C
=10mA
I
C
=200mA,I
B
=10mA
V
CB
=10V,I
E
=0mA,f=1MHZ
V
CE
=2V,I
E
=-10mA,f=100MHZ
MIN.
12
15
6
−
−
270
−
−
−
TYP.
−
−
−
−
−
−
90
7.5
320
−
−
−
100
100
680
250
−
−
MAX.
V
V
V
nA
nA
−
mV
pF
MHz
UNIT
BV
CEO
Collector-emitter breakdown voltage
BV
CBO
Collector-base breakdown voltage
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
Cob
f
T
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Collector output capacitance
Transition frequency
Note
1.Pulse test: tp≤300uS;
δ≤0.02.
CHDTC114E
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
V
Ioff)
V
I(on)
V
O(on)
I
I
I
C(off)
G1
R
1
R
2
/R
1
f
T
PARAMETER
Input off voltage
Input on voltage
Output voltage
Input current
Output current
DC current gain
Input resistor
Resistor ratio
Transition frequency
I
E
=-5mA, V
CE
=10.0V
f=100MHz
=
CONDITIONS
I
O
=100uA; V
CC
=5.0V
I
O
=10mA; V
O
=0.3V
I
O
=10mA; I
I
=0.5mA
V
I
=5V
V
I
=0V; V
CC
=50V
I
O
=5mA; V
O
=5.0V
−
−
−
−
30
7
0.8
−
MIN.
0.5
−
−
0.1
−
−
−
10
1.0
250
TYP.
−
3.0
0.3
0.88
0.5
−
13
1.2
−
MAX.
V
V
V
mA
uA
−
KΩ
−
MHz
UNIT
RATING CHARACTERISTIC CURVES ( CHEMF22PT )
2SC5585 Typical Electrical Characteristics
Fig.1 Ground emitter propagation
characteristics
1000
Fig.2 DC current gain vs. collector
current
1000
Ta=125 C
25 C
DC CURRENT GAIN : h
FE
O
O
COLLECTOR CURRENT : I
C
(mA)
V
CE
=2V
pulsed
V
CE
=2V
pulsed
-40 C
100
O
100
Ta=125 C
Ta=25 C
10
O
O
O
10
Ta=-40 C
1
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1
10
100
1000
BASE TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
1000
COLLECTOR SATURATION VOLTAGE : VCE(sat)(mV)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
Ta=25 C
pulsed
O
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
I
C
/I
B
=20
pulsed
100
100
Ta=125 C
O
Ta=25 C
O
Ta=-40 C
10
O
Ta=125 C
10
Ta=25 C
O
O
Ta=-40 C
1
1
10
100
1000
O
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
RATING CHARACTERISTIC CURVES ( CHEMF22PT )
2SC5585 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage
vs. collector current
BASER SATURATION VOLTAGE : V
BE(sat)
(mV)
Fig.6 Gain bandwidth product vs.
collector current
1000
TRANSITION FREQUENCY : f
T
(MHZ)
1000
I
C
/I
B
=20
pulsed
Ta=-40
O
C
O
Ta=25 C
O
Ta=125 C
V
CE
=2V
O
Ta=25 C
pulsed
100
100
10
10
1
1
10
100
1000
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
EMITTER CURRENT : I
E
(mA)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
I
E
=0A
f=1MH
Z
O
Ta=25 C
EMITTER INPUT CAPACITANCE : Cib (pF)
100
Cib
10
Cob
1
1
10
100
1000
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
RATING CHARACTERISTIC CURVES ( CHUMF22PT )
CHDTC114E Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
(ON characteristics)
100
50
V
O
=0.3V
Fig.2 Output current vs. input voltage
(OFF characteristics)
10m
5m
OUTPUT CURRENT : Io
(A)
V
CC
=5V
INPUT VOLTAGE : V
I(on)
(V)
20
10
5
2
1
500m
200m
100m
100
200
500 1m
2m
5m 10m 20m 50m 100m
Ta =- 40
O
C
25
O
C
=
100
O
C
2m
1m
500
200
100
50
20
10
5
2
1
0
Ta=100
O
C
25
O
C
-40
O
C
0.5
1.0
1.5
2.0
2.5
3.0
OUTPUT CURRENT : I
O
(A)
INPUT VOLTAGE : V
I(off)
(V)
Fig.3 DC current gain vs. output
current
1k
500
OUTPUT VOLTAGE : V
O(on)
(V)
DC CURRENT GAIN : G
I
Fig.4 Output voltage vs. output
current
1
500m
l
O
/l
I
=20
Ta=100
O
C
25
O
C
-40
O
C
V
O
=5V
Ta=100
O
C
25
O
C
-40
O
C
200
100
50
20
10
5
2
1
100 200
200m
100m
50m
20m
10m
5m
2m
500 1m 2m
5m 10m 20m 50m100m
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
OUTPUT CURRENT : I
O
(A)
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