CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 20 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTC643TUPT
CURRENT 600 mAmpere
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* In addition to the features of regular digital transistor.
V
CE
(sat)=40mV at I
C
/I
B
=50mA/2.5mA,makes these transistors
ideal for muting circuits.
* These transistors can be used at high current levels,I
C
=600mA
* Internal isolated NPN transistors in one package.
* Built in single resistor(R1=2.2kΩ, Typ. )
(2)
SC-70/SOT-323
(3)
1.3±0.1
0.3±0.1
0.65
2.0±0.2
0.65
(1)
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
1.25±0.1
MARKING
0.05~0.2
Emitter
Base
1
0.8~1.1
0~0.1
2.0~2.45
0.1Min.
CIRCUIT
2
TR
R1
3
Collector
Dimensions in millimeters
SC-70/SOT-323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(Max.)
P
D
T
STG
T
J
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
Coll ector -Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Coll ector current
Power dissipation
Storage temperature
Junction temperature
T
amb
≤
25
O
C, Note 1
CONDITIONS
20
20
12
600
200
−55 ∼ +150
−55 ∼ +150
VALUE
V
V
V
mA
mW
O
UNIT
C
C
O
RATING CHARACTERISTIC ( CHDTC643TUPT )
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
R
ON
PARAMETER
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
CONDITIONS
I
C
=50uA
I
E
=50uA
V
CB
=20V
V
EB
=12V
I
C
/I
B
=50mA/2.5mA
I
C
=50mA; V
CE
=5.0V
I
E
=-50mA, V
CE
=10.0V
f=100MHz
MIN.
20
20
12
−
−
−
820
3.29
−
−
−
−
−
−
TYP.
−
−
−
MAX.
V
V
V
UNIT
Collector-emitter breakdown voltage
I
C
=1.0mA
0.5
0.5
150
2700
6.11
−
−
uA
uA
mV
KΩ
MHz
Ω
40
−
4.7
150
0.55
DC current gain
Input resistor
Transition frequency
Output "ON" resistance
VI=5V,R
L
=1KΩ
,f=1KH
Z
−
Note
1.Pulse test: tp≤300uS;
δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC643TUPT )
Typical Electrical Characteristics
10000
Ta=100°C
Ta=25°C
Ta=
−40°C
V
CE
=5V
10000
I
C
/ I
B
=20
COLLECTOR SATURATION
VOLTAGE : V
CE (sat)
(mV)
DC CURRENT GAIN : h
FE
1000
1000
100
Ta=100°C
Ta=25°C
Ta=
−40°C
10
100
0.1
1
10
100
1000
1
0.1
1
10
100
1000
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
Fig.1 DC Current Gain vs.
Collector Current
Fig.2 Collector-Emitter Saturation
Voltage vs. Collector Current
1000
ON RESISTANCE : R
on
(Ω)
100
Ta=25°C
f=1kHz
R
L
=1kΩ
h
FE
=1500
(5V / 50mA)
10
1
0.1
0.1
1
10
100
INPUT VOLTAGE : VI (V)
Fig.3 "ON" resistance vs. Input Voltage
嵌入式系统
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