CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
NPN Digital Silicon Transistor
VOLTAGE 50 Volts
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTC115TUPT
CURRENT 100 mAmpere
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated NPN transistors in one package.
Built in single resistor(R1=100kΩ, Typ. )
(2)
SC-70/SOT-323
(3)
1.3±0.1
0.3±0.1
0.65
2.0±0.2
0.65
(1)
CONSTRUCTION
* One NPN transistors and bias of thin-film resistors in one
package.
1.25±0.1
MARKING
TUE
Emitter
Base
1
0.05~0.2
0.1Min.
2.0~2.45
0.8~1.1
0~0.1
CIRCUIT
2
TR
R1
3
Collector
Dimensions in millimeters
SC-70/SOT-323
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(Max.)
P
D
T
STG
T
J
Rθ
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
Coll ector -Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Coll ector current
Power dissipation
Storage temperature
Junction temperature
Thermal resistance , Note 1
junction - soldering point
T
amb
≤
25
O
C, Note 1
CONDITIONS
50
50
5
100
200
−55 ∼ +150
−55 ∼ +150
140
VALUE
V
V
V
mA
mW
O
UNIT
C
O
C
C/W
O
RATING CHARACTERISTIC ( CHDTC115TUPT )
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
R
1
f
T
PARAMETER
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
CONDITIONS
I
C
=50uA
I
E
=50uA
V
CB
=50V
V
EB
=4V
I
C
/I
B
=1mA/0.1mA
I
C
=1mA; V
CE
=5.0V
I
C
=5mA, V
CE
=10.0V
f=100MHz
MIN.
50
50
5.0
−
−
−
100
70
−
−
−
−
−
−
−
TYP.
−
−
−
MAX.
V
V
V
UNIT
Collector-emitter breakdown voltage
I
C
=1.0mA
0.5
0.5
0.3
600
130
−
uA
uA
V
KΩ
MHz
DC current gain
Input resistor
Transition frequency
250
100
250
Note
1.Pulse test: tp≤300uS;
δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTC115TUPT )
Typical Electrical Characteristics
Fig.1 DC current gain vs. collector
current
1k
500
DC CURRENT GAIN : h
FE
Fig.2 Collector-emitter voltage vs.
collector current
COLLECsaturationTOR
VOLTAGE : V
CE(sat)
(V)
1
500m
200m
100m
50m
20m
10m
5m
2m
1m
100
200
500 1m
2m
5m 10m 20m 50m 100m
Ta=100
O
C
25
O
C
-40
O
C
l
O
/l
I
=10
V
CE
= 5V
200
100
50
20
10
5
2
1
100 200
500 1m 2m
5m 10m 20m 50m100m
Ta=100
O
C
25
O
C
-40
O
C
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I
C
(uA)
京公网安备 11010802033920号
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved
电子工程世界
