CHENMKO ENTERPRISE CO.,LTD
SURFACE MOUNT
PNP Digital Silicon Transistor
VOL TA GE 50 Vo l t s
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
CHDTA115TEPT
CURRENT 100 m A m p er e
FEATURE
* Small surface mounting type. (SC-75/SOT-416)
* High current gain.
* Suitable for high packing density.
*
*
*
*
Low colloector-emitter saturation.
High saturation current capability.
Internal isolated PNP transistors in one package.
Built in bias resistor(R1=100kΩ, Typ. )
0.1
0.2±0.05
0.5 1.6±0.2
0.5
SC-75/SOT-416
(2)
(3)
1.0±0.1
0.1
0.3±0.05
(1)
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one
package.
0.1
0.2±0.05
0.8±0.1
MARKING
TE5
E
B
2
1
0.15±0.05
0.1Min.
0.6~0.9
0~0.1
1.6±0.2
CIRCUIT
TR
R1
3
C
Dimensions in millimeters
SC-75/SOT-416
LIMITING VALUES
In accordance with the Absolute Maximum Rating System .
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
C
T
STG
T
J
Rθ
J-S
Note
1. Transistor mounted on an FR4 printed-circuit board.
PARAMETER
Coll ector -Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Coll ector current
Collector Power dissipation
Storage temperature
Junction temperature
Thermal resistance , Note 1
junction - soldering point
T
amb
≤
25
O
C, Note 1
CONDITIONS
-50
-50
-5
-100
150
−55 ∼ +150
−55 ∼ +150
140
VALUE
V
V
V
mA
mW
O
UNIT
C
O
C
C/W
O
RATING CHARACTERISTIC ( CHDTA115TEPT )
CHARA CTERISTICS
T
amb
= 25
°C
unless otherwise speciÞed.
SY MBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(sat)
I
CBO
I
EBO
h
FE
R
1
f
T
PARAMETER
Collector-Base breakdown voltage
Emitter-Base breakdown voltage
Collector-Emitter Saturation voltage
Collector-Base current
Emitter-Base current
DC current gain
Input resistor
Transition frequency
CONDITIONS
I
C
= -50uA
I
E
= -50uA
I
C
= -1mA; I
B
= -0.1mA
V
CB
= -50V
V
EB
= -4V
I
C
= -1mA; V
CE
= -5.0V
I
E
=5mA, V
CE
= -10.0V
f=100MHz
=
MIN.
-50.0
-50.0
-5.0
−
−
−
100
70
−
−
−
−
−
−
−
250
100
250
TY P .
−
−
−
-0.3
-0.5
-0.5
600
130
−
KΩ
MHz
MAX.
V
V
V
V
uA
uA
UNIT
Collector-Emitter breakdown voltage I
C
= -1mA
Not e
1.Pulse test: tp≤300uS;
δ ≤
0.02.
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